Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MRF7S27130H
Rev. 2, 3/2011
RF Power Field Effect Transistors
MRF7S27130HR3
MRF7S27130HSR3
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• Typical WiMAX Performance: VDD = 28 Volts, IDQ = 1500 mA,
Pout = 23 Watts Avg., f = 2700 MHz, 802.16d, 64 QAM 3/4, 4 bursts,
7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 16.5 dB
Drain Efficiency — 20%
Device Output Signal PAR — 8.2 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset — --49 dBc in 0.5 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 105 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 14.
2500--2700 MHz, 23 W AVG., 28 V
WiMAX
LATERAL N--CHANNEL
RF POWER MOSFETs
CASE 465--06, STYLE 1
NI--780
MRF7S27130HR3
CASE 465A--06, STYLE 1
NI--780S
MRF7S27130HSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
CW
150
0.83
W
W/°C
Symbol
Value (2,3)
Unit
CW Operation @ TC = 25°C
Derate above 25°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 104 W CW
Case Temperature 69°C, 23 W CW
RθJC
0.32
0.36
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2007--2008, 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7S27130HR3 MRF7S27130HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 348 μAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1500 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, ID = 1500 mAdc, Measured in Functional Test)
VGG(Q)
4
5.4
7
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.4 Adc)
VDS(on)
0.1
0.24
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
10.4
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
711
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
326
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (2)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 23 W Avg., f = 2700 MHz,
WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR measured
in 0.5 MHz Channel Bandwidth @ ±5.25 MHz Offset.
Power Gain
Gps
15
16.5
18.5
dB
Drain Efficiency
ηD
18
20
23
%
PAR
7.5
8.2
—
dB
ACPR
—
--49
--46
dBc
IRL
—
--8
--5
dB
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S27130HR3 MRF7S27130HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances OFDM Signal (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, Pout = 23 W Avg.,
f = 2500 MHz and f = 2700 MHz, WiMAX Signal, OFDM Single--Carrier, 7 MHz Channel Bandwidth, 64 QAM 3/4, 4 Bursts, PAR = 9.5 dB @
0.01% Probability on CCDF.
Mask System Type G @ Pout = 23 W Avg.
Mask
Point B at 3.5 MHz Offset
Point C at 5 MHz Offset
Point D at 7.4 MHz Offset
Point E at 14 MHz Offset
Point F at 17.5 MHz Offset
dBc
—
—
—
—
—
--27
--40
--44
--60
--60
—
—
—
—
—
Relative Constellation Error @ Pout = 23 W Avg. (1)
RCE
—
--33
—
dB
(1)
EVM
—
2.2
—
% rms
Error Vector Magnitude
(Typical EVM Performance @ Pout = 23 W Avg. with OFDM 802.16d
Signal Call)
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1500 mA, 2500--2700 MHz Bandwidth
Video Bandwidth @ 105 W PEP Pout where IM3 = --30 dBc
(Tone Spacing from 100 kHz to VBW)
∆IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
MHz
—
40
—
Gain Flatness in 200 MHz Bandwidth @ Pout = 23 W Avg.
GF
—
1.2
—
dB
Average Deviation from Linear Phase in 200 MHz Bandwidth
@ Pout = 105 W CW
Φ
—
135
—
°
Delay
—
1.5
—
ns
Part--to--Part Insertion Phase Variation @ Pout = 105 W CW,
f = 2600 MHz, Six Sigma Window
∆Φ
—
81.3
—
°
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.013
—
dB/°C
∆P1dB
—
0.01
—
dB/°C
Average Group Delay @ Pout = 105 W CW, f = 2600 MHz
Output Power Variation over Temperature
(--30°C to +85°C)
1. RCE = 20Log(EVM/100)
MRF7S27130HR3 MRF7S27130HSR3
RF Device Data
Freescale Semiconductor
3
VBIAS
R1
Z18
R3
R2
VSUPPLY
+
C2
C3
C4
C6
C7
C8
C12
Z17
Z9
RF
INPUT
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z10
Z8
C1
Z11
Z12
Z13
Z14
Z15
RF
Z16 OUTPUT
C13
DUT
Z19
C5
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
0.320″ x 0.084″ Microstrip
0.380″ x 0.240″ Microstrip
0.046″ x 0.084″ Microstrip
0.273″ x 0.084″ Microstrip
0.360″ x 0.600″ Microstrip
0.260″ x 0.394″ Microstrip
0.145″ x 0.922″ Microstrip
0.455″ x 0.922″ Microstrip
0.106″ x 0.716″ Microstrip
0.413″ x 0.716″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17*
Z18, Z19*
PCB
C10
C11
C9
0.251″ x 0.084″ Microstrip
0.160″ x 0.162″ Microstrip
0.566″ x 0.084″ Microstrip
0.059″ x 0.084″ Microstrip
0.080″ x 0.123″ Microstrip
0.583″ x 0.084″ Microstrip
0.950″ x 0.100″ Microstrip
0.560″ x 0.100″ Microstrip
Taconic TLX8--0300, 0.030″, εr = 2.55
* Variable for tuning
Figure 1. MRF7S27130HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S27130HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
2 pF Chip Capacitor
ATC100B2R0BT500XT
ATC
C2, C6, C7, C8, C9, C10, C11
10 μF, 50 V Chip Capacitors
C5750X5R1H106M
TDK
C3
3 pF Chip Capacitor
ATC100B3R0BT500XT
ATC
C4, C5
3.6 pF Chip Capacitors
ATC100B3R6BT500XT
ATC
C12
470 μF, 63 V Electrolytic Capacitor, Radial
EKME630ELL471MK255
Multicomp
C13
5.6 pF Chip Capacitor
ATC100B5R6BT500XT
ATC
R1, R2
2 KΩ, 1/4 W Chip Resistors
CRCW12062001FKEA
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R1FKEA
Vishay
MRF7S27130HR3 MRF7S27130HSR3
4
RF Device Data
Freescale Semiconductor
C6
VGS
R1
C7
C8
VDD
C4
C3
C12
R3
C2
C1
C13
CUT OUT AREA
R2
C11
C9
C5
C10
MRF7S27130H/HS
Rev. 0
Figure 2. MRF7S27130HR3(HSR3) Test Circuit Component Layout
MRF7S27130HR3 MRF7S27130HSR3
RF Device Data
Freescale Semiconductor
5
Gps, POWER GAIN (dB)
17.8
17.7
21
17.5
17.4
17.3
Gps
17.1
17
2500
2550
2575
--5
--46
--6
--48
--49
ACPR
2525
20
--47
IRL
17.2
24
23
22
ηD
17.6
25
2625
2600
2650
2675
ACPR (dBc)
17.9
VDD = 28 Vdc, Pout = 23 W (Avg.), IDQ = 1500 mA
802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth
Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
--50
2700
--7
--8
--9
--10
IRL, INPUT RETURN LOSS (dB)
18
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Gps, POWER GAIN (dB)
17.5
VDD = 28 Vdc, Pout = 43 W (Avg.), IDQ = 1500 mA
802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth
Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
17.4
29
17.2
Gps
17.1
17
16.8
2550
2575
2600
--5
--36
--6
--38
--39
ACPR
2525
28
--37
IRL
16.9
16.7
2500
32
31
30
ηD
17.3
33
2625
2650
2675
ACPR (dBc)
17.6
--40
2700
--7
--8
--9
--10
IRL, INPUT RETURN LOSS (dB)
17.7
ηD, DRAIN
EFFICIENCY (%)
Figure 3. WiMAX Broadband Performance @ Pout = 23 Watts Avg.
f, FREQUENCY (MHz)
Figure 4. WiMAX Broadband Performance @ Pout = 43 Watts Avg.
19
--10
Gps, POWER GAIN (dB)
18
17
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
IDQ = 2250 mA
2000 mA
1500 mA
1200 mA
16
1000 mA
VDD = 28 Vdc, IDQ = 1500 mA
f1 = 2595 MHz, f2 = 2605 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
15
14
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two--Tone Power Gain versus
Output Power
500
--20
VDD = 28 Vdc, IDQ = 1500 mA
f1 = 2595 MHz, f2 = 2605 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
--30
IDQ = 2250 mA
1000 mA
--40
--50
--60
1500 mA
1200 mA
1
2000 mA
100
10
200
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF7S27130HR3 MRF7S27130HSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1500 mA
f1 = 2595 MHz, f2 = 2605 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
--40
3rd Order
--50
5th Order
--60
7th Order
--70
--80
1
10
100
200
0
VDD = 28 Vdc, Pout = 105 W (PEP), IDQ = 1500 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2600 MHz
--10
--20
--30
IM3--U
IM3--L
--40
IM5--U
--50
--60
IM7--L
IM7--U
1
IM5--L
100
10
TWO--TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
55
VDD = 28 Vdc, IDQ = 1500 mA
f = 2600 MHz, 802.16d, 64 QAM 3/4
4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB
@ 0.01% Probability on CCDF
50
45
40
35
30
25_C --15
85_C --20
85_C --25
25_C
--30_C
25
ηD
5
--35
TC = --30_C --45
--50
15
10
--30
--40
Gps
20
0
--10
--30_C
85_C
ACPR
1
10
ACPR (dBc)
--30
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
--20
25_C --55
--60
--65
300
100
Pout, OUTPUT POWER (WATTS) AVG. WiMAX
Figure 9. WiMAX, ACPR, Power Gain and Drain
Efficiency versus Output Power
18
--30_C
25_C 50
85_C
18
17
17
Gps
16
25_C
40
30
85_C
15
20
14
VDD = 28 Vdc
IDQ = 1500 mA
f = 2600 MHz
ηD
13
1
10
10
100
0
300
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
TC = --30_C
ηD, DRAIN EFFICIENCY (%)
60
19
IDQ = 1500 mA
f = 2600 MHz
16
15
32 V
14
VDD = 24 V
28 V
13
0
25
50
75
100
125
150
175
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
Figure 11. Power Gain versus Output Power
200
MRF7S27130HR3 MRF7S27130HSR3
RF Device Data
Freescale Semiconductor
7
WiMAX TEST SIGNAL
100
--10
10
--20
--30
1
--40
0.1
(dB)
PROBABILITY (%)
Input Signal
10 MHz
Channel BW
0.01
802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz
Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability
on CCDF
0.001
0.0001
0
2
4
--50
--60
--70
6
8
PEAK--TO--AVERAGE (dB)
Figure 12. OFDM 802.16d Test Signal
10
--80
--90
--20
ACPR in 1 MHz
Integrated BW
--15
--10
ACPR in 1 MHz
Integrated BW
--5
0
5
10
15
20
f, FREQUENCY (MHz)
Figure 13. WiMAX Spectrum Mask Specifications
MRF7S27130HR3 MRF7S27130HSR3
8
RF Device Data
Freescale Semiconductor
Zo = 5 Ω
f = 2700 MHz
Zsource
f = 2500 MHz
f = 2700 MHz
Zload
f = 2500 MHz
VDD = 28 Vdc, IDQ = 1500 mA, Pout = 23 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2500
4.499 -- j2.335
2.936 -- j4.876
2525
4.382 -- j1.944
2.885 -- j4.666
2550
4.294 -- j1.567
2.838 -- j4.467
2575
4.234 -- j1.194
2.797 -- j4.273
2600
4.209 -- j0.820
2.763 -- j4.084
2625
4.219 -- j0.447
2.733 -- j3.903
2650
4.248 -- j0.090
2.706 -- j3.732
2675
4.304 + j0.261
2.678 -- j3.570
2700
4.390 + j0.612
2.652 -- j3.410
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 14. Series Equivalent Source and Load Impedance
MRF7S27130HR3 MRF7S27130HSR3
RF Device Data
Freescale Semiconductor
9
PACKAGE DIMENSIONS
MRF7S27130HR3 MRF7S27130HSR3
10
RF Device Data
Freescale Semiconductor
MRF7S27130HR3 MRF7S27130HSR3
RF Device Data
Freescale Semiconductor
11
MRF7S27130HR3 MRF7S27130HSR3
12
RF Device Data
Freescale Semiconductor
MRF7S27130HR3 MRF7S27130HSR3
RF Device Data
Freescale Semiconductor
13
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents and software to aid your design process.
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
R5 TAPE AND REEL OPTION
R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
The R5 tape and reel option for MRF7S27130H and MRF7S27130HS parts will be available for 2 years after release of
MRF7S27130H and MRF7S27130HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be
delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5
tape and reel option will be offered MRF7S27130H and MRF7S27130HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2007
• Initial Release of Data Sheet
1
Dec. 2008
• Modified Fig. 13 to display Input Signal only, p. 8
• Updated Fig. 14, WiMAX Spectrum Mask Specification, to reflect the distortion free input test signal versus
the distortion loaded output signal, p. 8
2
Mar. 2011
• Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification
number, PCN13628, p. 1, 2
• Fig. 12, MTTF versus Junction Temperature removed, p. 8. Refer to the device’s MTTF Calculator
available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
p. 14
MRF7S27130HR3 MRF7S27130HSR3
14
RF Device Data
Freescale Semiconductor
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MRF7S27130HR3 MRF7S27130HSR3
Document
Number:
RF
Device
Data MRF7S27130H
Rev. 2, 3/2011Semiconductor
Freescale
15