Freescale Semiconductor Technical Data Document Number: A2I35H060N Rev. 0, 4/2016 RF LDMOS Wideband Integrated Power Amplifiers The A2I35H060N wideband integrated circuit is an asymmetrical Doherty designed with on--chip matching that makes it usable from 3400 to 3800 MHz. This multi--stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats. 3500 MHz Typical Doherty Single--Carrier W--CDMA Characterization Performance: VDD = 28 Vdc, IDQ1A = 56 mA, IDQ2A = 141 mA, VGS1B = 1.6 Vdc, VGS2B = 1.3 Vdc, Pout = 10 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1) Frequency Gps (dB) PAE (%) ACPR (dBc) 3400 MHz 24.0 32.5 –33.4 3500 MHz 24.0 32.4 –37.0 3600 MHz 23.7 31.3 –39.0 A2I35H060NR1 A2I35H060GNR1 3400–3800 MHz, 10 W AVG., 28 V AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS TO--270WB--17 PLASTIC A2I35H060NR1 Features Advanced High Performance In--Package Doherty On--Chip Matching (50 Ohm Input, DC Blocked) Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (2) Designed for Digital Predistortion Error Correction Systems TO--270WBG--17 PLASTIC A2I35H060GNR1 1. All data measured in fixture with device soldered to heatsink. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987. Freescale Semiconductor, Inc., 2016. All rights reserved. RF Device Data Proprietary. Nondisclosure Agreement Required. Contact RF Division Marketing. Freescale Confidential Freescale Semiconductor, Inc. A2I35H060NR1 A2I35H060GNR1 1 VDS1A VBWA RFinA VDS1A VGS2A VGS1A RFinA N.C. GND GND N.C. RFinB VGS1B VGS2B VDS1B RFout1/VDS2A VGS1A Quiescent Current Temperature Compensation (1) VGS2A VGS1B Quiescent Current Temperature Compensation (1) VGS2B RFinB RFout2/VDS2B VDS1B VBWB 1 2 3 4 5 6 7 8 9 10 11 12 Carrier 17 16 15 14 13 Peaking (Top View) VBWA(2) RFout1/VDS2A GND RFout2/VDS2B VBWB(2) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 2. Device can operate with VDD current supplied through pin 13 and pin 17. 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987. Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +65 Vdc Gate--Source Voltage VGS –0.5, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg –65 to +150 C Case Operating Temperature Range TC –40 to +150 C Operating Junction Temperature Range (3,4) TJ –40 to +225 C Input Power Pin 26 dBm Symbol Value (4,5) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 75C, 10 W Avg., W--CDMA, 3500 MHz Stage 1, 28 Vdc, IDQ1A = 56 mA, VGS1B = 1.6 Vdc, Stage 2, 28 Vdc, IDQ2A = 141 mA, VGS2B = 1.3 Vdc RJC C/W 7.0 1.7 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) III Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C 3. Continuous use at maximum temperature will affect MTTF. 4. MTTF calculator available at http://www.nxp.com/RF/calculators. 5. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. A2I35H060NR1 A2I35H060GNR1 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 1.0 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 5 Adc) VGS(th) 0.6 1.2 1.6 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ1A = 56 mAdc) VGS(Q) — 2.0 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ1A = 56 mAdc, Measured in Functional Test) VGG(Q) 7.0 8.9 9.5 Vdc Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 1.0 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 28 Adc) VGS(th) 0.6 1.2 1.6 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, IDQ2A = 141 mAdc) VGS(Q) — 1.9 — Vdc Fixture Gate Quiescent Voltage (VDD = 28 Vdc, IDQ2A = 141 mAdc, Measured in Functional Test) VGG(Q) 4.0 4.9 5.5 Vdc Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 360 mAdc) VDS(on) 0.1 0.22 1.5 Vdc Characteristic Carrier Stage 1 -- Off Characteristics (1) Carrier Stage 1 -- On Characteristics Carrier Stage 2 -- Off Characteristics (1) Carrier Stage 2 -- On Characteristics 1. Each side of device measured separately. (continued) A2I35H060NR1 A2I35H060GNR1 RF Device Data Freescale Semiconductor, Inc. 3 Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 1.0 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc VGS(th) 0.6 1.2 1.6 Vdc Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 32 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 1.0 Vdc, VDS = 0 Vdc) IGSS — — 1 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 44 Adc) VGS(th) 0.6 1.3 1.6 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 360 mAdc) VDS(on) 0.05 0.22 1.5 Vdc Peaking Stage 1 -- Off Characteristics (1) Peaking Stage 1 -- On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 8 Adc) Peaking Stage 2 -- Off Characteristics (1) Peaking Stage 2 -- On Characteristics (1) 1. Each side of device measured separately. (continued) A2I35H060NR1 A2I35H060GNR1 4 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit (1,2,3) Functional Tests (In Freescale Doherty Production Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = 56 mA, IDQ2A = 141 mA, VGS1B = 1.6 Vdc. VGS2B = 1.3 Vdc, Pout = 10 W Avg., f = 3500 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Gps 23.0 24.6 26.5 dB Power Added Efficiency PAE 25.2 29.9 — % Adjacent Channel Power Ratio ACPR — –35.9 –30.4 dBc Pout @ 3 dB Compression Point, CW P3dB 46.3 50.6 — W (2) (In Load Mismatch Freescale Doherty Characterization Test Fixture, 50 ohm system) IDQ1A = 56 mA, IDQ2A = 141 mA, VGS1B = 1.6 Vdc. VGS2B = 1.3 Vdc, f = 3500 MHz VSWR 10:1 at 32 Vdc, 56 W CW Output Power (3 dB Input Overdrive from 47 W CW Rated Power) No Device Degradation Typical Performance (2) (In Freescale Doherty Characterization Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1A = 56 mA, IDQ2A = 141 mA, VGS1B = 1.6 Vdc, VGS2B = 1.3 Vdc, 3400–3600 MHz Bandwidth Pout @ 1 dB Compression Point, CW P1dB — 48 — W (4) P3dB — 65 — W AM/PM (Maximum value measured at the P3dB compression point across the 3400–3600 MHz frequency range.) — –23 — VBWres — 140 — MHz — — 3.45 1.21 — — Pout @ 3 dB Compression Point VBW Resonance Point (IMD Third Order Intermodulation Inflection Point, measured Class AB: IDQ1A = 56 mA, IDQ2A = 141 mA, IDQ1B = 80 mA, IDQ2B = 220 mA) Quiescent Current Accuracy over Temperature (5) with 4.7 k Gate Feed Resistors (–30 to 85C) Stage 1 with 4.7 k Gate Feed Resistors (–30 to 85C) Stage 2 IQT Gain Flatness in 200 MHz Bandwidth @ Pout = 10 W Avg. GF — 0.4 — dB Gain Variation over Temperature (–30C to +85C) G — 0.032 — dB/C P1dB — 0.004 — dB/C Output Power Variation over Temperature (–30C to +85C) % Table 6. Ordering Information Device A2I35H060NR1 A2I35H060GNR1 Tape and Reel Information R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel Package TO--270WB--17 TO--270WBG--17 1. Part internally matched both on input and output. 2. Measurements made with device in an asymmetrical Doherty configuration. 3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GN) parts. 4. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. 5. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987. A2I35H060NR1 A2I35H060GNR1 RF Device Data Freescale Semiconductor, Inc. 5 A2I35H060N Rev. 8 VDD1A VGG1A C17 C9 C8 R1 C1 C7 C6 R2 R5 C10 R4 R3 C2 C11 C12 C13 VGG1B VGG2B C14 VDD2A C19 C18 CUT OUT AREA C16 VGG2A C15 C3 C22 C C25 C26 P C5 C23 C24 C4 C20 C21 VDD2B VDD1B Figure 3. A2I35H060NR1 Production Test Circuit Component Layout — 4.0 5.0 (10.2 cm 12.7 cm) Table 7. A2I35H060NR1 Production Test Circuit Component Designations and Values Part C1, C2, C3, C4, C5 Description 5.6 pF Chip Capacitors Part Number Manufacturer ATC600F5R6BT250XT ATC C6, C8, C10, C12, C14, C16, 1 F Chip Capacitors C18, C20 GRM31MR71H105KA88K Murata C7, C9, C11, C13, C15, C17, 10 F Chip Capacitors C19, C21 GRM31CR61H106KA12L Murata C22 0.3 pF Chip Capacitor ATC600F0R3BT250XT ATC C23 0.6 pF Chip Capacitor ATC600F0R6AT250XT ATC C24 8.2 pF Chip Capacitor ATC600F8R2JT250XT ATC C25 2.7 pF Chip Capacitor ATC600F2R7BT250XT ATC C26 0.2 pF Chip Capacitor ATC600F0R2AW250XT ATC R1, R2, R3, R4 4.7 k, 1/10 W Chip Resistors RR1220P--472-D Susumu R5 100 , 1/10 W Chip Resistor RR1220P100-A Susumu PCB Taconic RF35A2, 0.020, r = 3.66 — MTL A2I35H060NR1 A2I35H060GNR1 6 RF Device Data Freescale Semiconductor, Inc. VGG1A VGG2A C7 C6 C8 VDD1A C9 VDD2A C17 C16 C3 C18 D80992 C19 C1 R2 R1 C25 C26 C22 C R5 Q1 P C23 C24 R3 R4 C2 A2I35H060N Rev. SJ3 C14 C12 C11 C10 C13 VGG1B C5 VGG2B C4 C20 C21 C15 VDD1B VDD2B Note: All data measured in fixture with device soldered to heatsink. Figure 4. A2I35H060NR1 Characterization Test Circuit Component Layout — 2.0 2.8 (5.0 cm 7.0 cm) Table 8. A2I35H060NR1 Characterization Test Circuit Component Designations and Values Part C1, C2, C3, C4, C5 Description 5.6 pF Chip Capacitors Part Number Manufacturer ATC600F5R6BT250XT ATC C6, C8, C10, C12, C14, C16, 1 F Chip Capacitors C18, C20 GRM31MR71H105KA88K Murata C7, C9, C11, C13, C15, C17, 10 F Chip Capacitors C19, C21 GRM31CR61H106KA12L Murata C22 0.3 pF Chip Capacitor ATC600F0R3BT250XT ATC C23 0.6 pF Chip Capacitor ATC600F0R6AT250XT ATC C24 8.2 pF Chip Capacitor ATC600F8R2JT250XT ATC C25 2.7 pF Chip Capacitor ATC600F2R7BT250XT ATC C26 0.1 pF Chip Capacitor ATC600F0R1AW250XT ATC Q1 RF LDMOS Power Amplifier A2I35H060NR1 NXP R1, R2, R3, R4 4.7 k, 1/10 W Chip Resistors RR1220P--472-D Susumu R5 100 , 1/10 W Chip Resistor RR1220P100-A Susumu PCB Taconic RF35A2, 0.020, r = 3.66 D80992 MTL A2I35H060NR1 A2I35H060GNR1 RF Device Data Freescale Semiconductor, Inc. 7 TYPICAL CHARACTERISTICS — 3400–3600 MHz 24 23.5 VDD = 28 Vdc, Pout = 10 W (Avg.) IDQ1A = 56 mA, IDQ2A = 141 mA 23 VGS1B = 1.6 Vdc, VGS2B = 1.3 Vdc Single--Carrier W--CDMA 22.5 3.84 MHz Channel Bandwidth PARC 22 Input Signal PAR = 9.9 dB 21.5 @ 0.01% Probability on CCDF 21 25 20 15 Gps –20 –1 –25 –2 ACPR (dBc) Gps, POWER GAIN (dB) 30 D –30 ACPR –35 –40 20.5 20 3360 3420 3480 3540 3600 3660 f, FREQUENCY (MHz) 3720 3780 –45 3840 –3 –4 –5 PARC (dB) 24.5 D, DRAIN EFFICIENCY (%) 35 25 –6 IMD, INTERMODULATION DISTORTION (dBc) Figure 5. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 10 Watts Avg. –10 VDD = 28 Vdc, Pout = 24 W (PEP), IDQ1A = 56 mA IDQ2A = 141 mA, IDQ1B = 80 mA, IDQ2B = 220 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 3500 MHz –20 –30 IM3--L IM3--U –40 IM5--U –50 IM7--U IM7--L –60 IM5--L 1 10 300 100 TWO--TONE SPACING (MHz) 24.5 –1 24 23.5 23 22.5 22 VDD = 28 Vdc, IDQ1A = 56 mA, IDQ2A = 141 mA VGS1B = 1.6 Vdc, VGS2B = 1.3 Vdc f = 3500 MHz, Single--Carrier W--CDMA –2 –1 dB = 7.16 W D ACPR –2 dB = 10.78 W –3 Gps 3.84 MHz Channel Bandwidth Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF –5 –6 0 5 –15 40 –20 36 32 –3 dB = 14.4 W –4 44 28 –25 –30 ACPR (dBc) 0 D DRAIN EFFICIENCY (%) 25 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) Gps, POWER GAIN (dB) Figure 6. Intermodulation Distortion Products versus Two--Tone Spacing –35 24 –40 20 30 –45 PARC 10 15 20 Pout, OUTPUT POWER (WATTS) 25 Figure 7. Output Peak--to--Average Ratio Compression (PARC) versus Output Power A2I35H060NR1 A2I35H060GNR1 8 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 3400–3600 MHz Gps, POWER GAIN (dB) 25 24 Gps 3500 MHz 3400 MHz 3400 MHz ACPR Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF 1 0 20 3600 MHz 21 20 35 25 3600 MHz 3500 MHz 22 10 30 3600 MHz 3400 MHz 3500 MHz 23 D 40 10 Pout, OUTPUT POWER (WATTS) AVG. 15 10 30 –10 –20 –30 ACPR (dBc) VDD = 28 Vdc, IDQ1A = 56 mA, IDQ2A = 141 mA VGS1B = 1.6 Vdc, VGS2B = 1.3 Vdc, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth D, DRAIN EFFICIENCY (%) 26 –40 –50 Figure 8. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 26 25 Gain GAIN (dB) 24 23 22 VDD = 28 Vdc, Pin = 0 dBm IDQ1A = 56 mA, IDQ2A = 141 mA VGS1B = 1.6 Vdc, VGS2B = 1.3 Vdc 21 20 3100 3200 3300 3400 3500 3600 f, FREQUENCY (MHz) 3700 3800 3900 Figure 9. Broadband Frequency Response A2I35H060NR1 A2I35H060GNR1 RF Device Data Freescale Semiconductor, Inc. 9 PACKAGE DIMENSIONS A2I35H060NR1 A2I35H060GNR1 10 RF Device Data Freescale Semiconductor, Inc. A2I35H060NR1 A2I35H060GNR1 RF Device Data Freescale Semiconductor, Inc. 11 A2I35H060NR1 A2I35H060GNR1 12 RF Device Data Freescale Semiconductor, Inc. A2I35H060NR1 A2I35H060GNR1 RF Device Data Freescale Semiconductor, Inc. 13 A2I35H060NR1 A2I35H060GNR1 14 RF Device Data Freescale Semiconductor, Inc. A2I35H060NR1 A2I35H060GNR1 RF Device Data Freescale Semiconductor, Inc. 15 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards To Download Resources Specific to a Given Part Number: 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Apr. 2016 Description Initial Release of Data Sheet A2I35H060NR1 A2I35H060GNR1 16 RF Device Data Freescale Semiconductor, Inc. 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