Data Sheet

Freescale Semiconductor
Technical Data
Document Number: MMRF2005N
Rev. 0, 8/2015
RF LDMOS Wideband Integrated
Power Amplifiers
MMRF2005N
MMRF2005GN
The MMRF2005N wideband integrated circuit is designed with on--chip
matching that makes it usable from 728 to 960 MHz. This multi--stage structure
is rated for 24 to 32 V operation and is ideal for applications including radio
communications, data links and UHF radar.
Driver Application — 900 MHz
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ1 =
106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg., IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Frequency (1)
Gps
(dB)
PAE
(%)
ACPR
(dBc)
920 MHz
36.6
16.1
–48.0
940 MHz
36.8
16.7
–48.7
960 MHz
36.6
17.3
–48.6
728–960 MHz, 3.2 W AVG., 28 V
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
TO--270WB--16
PLASTIC
MMRF2005N
 Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 48 W CW
Output Power (3 dB Input Overdrive from Rated Pout)
Driver Application — 700 MHz
 Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ1 =
106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg., IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
728 MHz
36.4
16.1
–47.7
748 MHz
36.4
16.1
–47.8
768 MHz
36.4
16.0
–47.9
TO--270WBG--16
PLASTIC
MMRF2005GN
Features
 Characterized with series equivalent large--signal impedance parameters
and common source S--parameters
 On--chip matching (50 ohm input, DC blocked, > 5 ohm output)
 Integrated quiescent current temperature compensation with
enable/disable function (2)
 Integrated ESD protection
VDS1
RFin
VGS1
VGS2
RFout/VDS2
Quiescent Current
Temperature Compensation (2)
GND
NC
NC
VDS1
GND
1
2
3
4
5
16
15
GND
NC
RFin
6
14
RFout/VDS2
GND
VGS1
VGS2
NC
GND
7
8
9
10
11
13
12
NC
GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. 900 MHz Driver Frequency Band table data collected in the 900 MHz application circuit. See Fig. 9.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 or AN1987.
 Freescale Semiconductor, Inc., 2015. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMRF2005N MMRF2005GN
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
–0.5, +65
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature Range
TC
–40 to +150
C
Operating Junction Temperature Range (1,2)
TJ
–40 to +225
C
Input Power
Pin
20
dBm
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80C, 3.2 W CW, 940 MHz
Stage 1, 28 Vdc, IDQ1 = 106 mA
Stage 2, 28 Vdc, IDQ2 = 285 mA
Case Temperature 80C, 30 W CW, 940 MHz
Stage 1, 28 Vdc, IDQ1 = 40 mA
Stage 2, 28 Vdc, IDQ2 = 340 mA
RJC
C/W
5.5
1.6
5.8
1.2
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B, passes 500 V
Machine Model (per EIA/JESD22--A115)
A, passes 100 V
Charge Device Model (per JESD22--C101)
II, passes 200 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 14 Adc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 106 mA)
VGS(Q)
—
2.8
—
Vdc
Fixture Gate Quiescent Voltage (4)
(VDD = 28 Vdc, IDQ1 = 106 mA, Measured in Functional Test)
VGG(Q)
6.9
9.4
11.9
Vdc
Characteristic
Stage 1 — Off Characteristics
Stage 1 — On Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf/calculators.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
4. VGG = 3.3  VGS(Q). Parameter measured on Freescale test fixture, due to resistor divider network on the board. Refer to test circuit schematic.
(continued)
MMRF2005N MMRF2005GN
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 74 Adc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2 = 285 mA)
VGS(Q)
—
2.6
—
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD = 28 Vdc, IDQ2 = 285 mA, Measured in Functional Test)
VGG(Q)
4.2
5.9
7.6
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 740 mA)
VDS(on)
0.1
0.3
0.8
Vdc
Stage 2 — Off Characteristics
Stage 2 — On Characteristics
Functional Tests (2,3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 106 mA, IDQ2 = 285 mA, Pout = 3.2 W Avg.,
f = 940 MHz, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carrier, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
33
35.9
38
dB
Power Added Efficiency
PAE
14
16.5
—
%
ACPR
—
–49.5
–46
dBc
IRL
—
–18.7
–9
dB
Adjacent Channel Power Ratio
Input Return Loss
Typical Performance — 900 MHz (In Freescale 900 MHz Application Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 106 mA,
IDQ2 = 285 mA, 920–960 MHz Bandwidth
VDD = 28 Vdc, IDQ1 = 40 mA, IDQ2 = 340 mA
Pout @ 1 dB Compression Point, CW
P1dB
—
31
—
—
45
—
VBWres
—
80
—
MHz
IQT
—
0.02
—
%
Gain Flatness in 40 MHz Bandwidth @ Pout = 3.2 W Avg.
GF
—
0.2
—
dB
Gain Variation over Temperature
(–30C to +85C)
G
—
0.036
—
dB/C
P1dB
—
0.01
—
dBm/C
IMD Symmetry @ 25 W PEP, Pout where IMD Third Order
IMDsym
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Quiescent Current Accuracy over Temperature (4)
with 3 k Gate Feed Resistors (–30 to 85C)
Output Power Variation over Temperature
(–30C to +85C)
W
MHz
Table 6. Ordering Information
Device
MMRF2005NR1
MMRF2005GNR1
Tape and Reel Information
R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel
Package
TO--270WB--16
TO--270WBG--16
1. VGG = 2.25  VGS(Q). Parameter measured on Freescale test fixture, due to resistor divider network on the board. Refer to test circuit schematic.
2. Part internally matched both on input and output.
3. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
4. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf and search for AN1977 or AN1987.
MMRF2005N MMRF2005GN
RF Device Data
Freescale Semiconductor, Inc.
3
VDD1
C14 C15
R7
C13
C18
C9
C6
R4
R5
C5 C4
R6
C2
VGG1
C16
C8 C7
C1
CUT OUT AREA
C17
VDD2
C11
C12
C10
C3
VGG2
R1
R2
R3
Figure 3. MMRF2005N Test Circuit Component Layout — 900 MHz
Table 7. MMRF2005N Test Circuit Component Designations and Values — 900 MHz
Part
Description
Part Number
Manufacturer
C1, C4, C7
47 pF Chip Capacitors
ATC600F470JT250XT
ATC
C2, C5, C8
10 nF, 50 V Chip Capacitors
C0603C103J5RAC--TU
Kemet
C3, C6
1 F, 50 V Chip Capacitors
GRM21BR71H105KA12L
Murata
C9, C15
10 F, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C10
16 pF Chip Capacitor
ATC100B160JT500XT
ATC
C11
6.2 pF Chip Capacitor
ATC100B6R2BT500XT
ATC
C12
7.5 pF Chip Capacitor
ATC100B7R5CT500XT
ATC
C13, C14
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C16, C17
100 F, 50 V Electrolytic Capacitors
MCGPR35V337M10X16--RH
Multicomp
C18
0.5 pF Chip Capacitor
ATC100B0R5BT500XT
ATC
R1, R2, R3, R4, R5, R6
1000 , 1/4 W Chip Resistors
CRCW12061K00FKEA
Vishay
R7
0 , 3A Chip Resistor
CRCW12060000Z0EA
Vishay
PCB
0.020, r = 3.5
RF--35
Taconic
MMRF2005N MMRF2005GN
4
RF Device Data
Freescale Semiconductor, Inc.
37
16
14
Gps
36.5
12
36
PARC
35.5
35
3.84 MHz Channel Bandwidth
34.5 Input Signal PAR = 7.5 dB @ 0.01%
34 Probability on CCDF
33.5
800
825
850
875
ACPR
925
950
–18
–42
–20
–44
IRL
900
–40
975
–46
–48
–22
–24
–26
–50
1000
–28
0.5
0
–0.5
–1
–1.5
PARC (dB)
Gps, POWER GAIN (dB)
18
PAE
IRL, INPUT RETURN LOSS (dB)
20
VDD = 28 Vdc, Pout = 3.2 W (Avg.), IDQ1 = 106 mA
38 I
DQ2 = 285 mA, Single--Carrier W--CDMA
37.5
ACPR (dBc)
38.5
PAE, POWER ADDED
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 900 MHz
–2
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 3.2 Watts Avg.
–10
VDD = 28 Vdc, Pout = 25 W (PEP), IDQ1 = 106 mA
IDQ2 = 285 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
–20
IM3--U
–30
IM3--L
–40
IM5--U
IM5--L
–50
IM7--L
IM7--U
–60
1
10
100
TWO--TONE SPACING (MHz)
37
0
36.5
36
35.5
35
34.5
40
–1 dB = 6.41 W
PARC
–1
34
VDD = 28 Vdc
IDQ1 = 106 mA
IDQ2 = 285 mA
f = 940 MHz
–2
–2 dB = 8.98 W
28
–3 dB = 12.17 W
–3
22
–5
Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
PAE
–4
ACPR
2
–26
46
Gps
5
8
11
16
10
–30
–34
–38
ACPR (dBc)
1
PAE, POWER ADDED EFFICIENCY (%)
37.5
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
–42
–46
–50
14
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MMRF2005N MMRF2005GN
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS — 900 MHz
0
40
–5
30
–10
25
–15
VDD = 28 Vdc
Pin = –10 dBm
IDQ1 = 106 mA
IDQ2 = 285 mA
20
15
10
450
550
650
IRL (dB)
GAIN (dB)
Gain
35
–20
IRL
–25
750
850
950
1050
1150
–30
1250
f, FREQUENCY (MHz)
Figure 7. Broadband Frequency Response
Table 8. Series Equivalent Input and Load
Impedance — 900 MHz
Zin
f
MHz
Zin

Zload

820
37.95 + j2.31
4.70 + j0.98
840
39.95 + j2.72
4.29 + j1.23
860
42.70 + j1.02
3.93 + j1.67
880
44.40 – j1.38
3.63 + j2.15
900
46.25 – j4.92
3.41 + j2.61
920
45.70 – j8.41
3.14 + j3.05
940
45.46 – j11.47
2.94 + j3.48
960
45.07 – j15.19
2.85 + j3.90
980
43.49 – j18.03
2.69 + j4.32
=
Device input impedance as measured from
gate to ground.
Zload =
Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
MMRF2005N MMRF2005GN
6
RF Device Data
Freescale Semiconductor, Inc.
LOAD PULL CHARACTERISTICS — 900 MHz
Table 9. Load Pull Performance VDD = 28 Vdc,
IDQ1 = 106 mA, IDQ2 = 285 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
920
43
46.3
51
47.1
940
42
46.3
50
47
960
42
46.3
50
47
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
f
(MHz)
Zsource

Zload

920
P1dB
55.82 + j15.71
4.54 + j1.15
940
P1dB
52.56 + j20.20
4.38 + j1.21
960
P1dB
49.18 + j25.00
5.04 + j1.15
MMRF2005N MMRF2005GN
RF Device Data
Freescale Semiconductor, Inc.
7
900 MHz APPLICATION CIRCUIT
Table 10. 900 MHz Performance (In Freescale Application Circuit, 50 ohm system) VDD = 28 Vdc, IDQ1 = 106 mA,
IDQ2 = 285 mA, Pout = 3.2 W Avg., Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF
Frequency
(MHz)
Gps
(dB)
PAE
(%)
ACPR
(dBc)
920
36.6
16.1
–48.0
940
36.8
16.7
–48.7
960
36.6
17.3
–48.6
960 MHz
960 MHz
940 MHz
Gps, POWER GAIN (dB)
37
920 MHz
36.5 VDD = 28 Vdc
I
=
106
mA,
I
=
285
mA
DQ2
36 DQ1
Single--Carrier W--CDMA, 3.84 MHz
35.5 Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01%
35 Probability on CCDF
34.5
PAE
34
33.5
1
0
54
–5
48
920 MHz
960 MHz 940 MHz
42
36
30
920 MHz
24
18
12
6
ACPR
33
60
10
50
0
–10
–15
–20
–25
–30
ACPR (dBc)
Gps
37.5
PAE, POWER ADDED EFFICIENCY (%)
38
–35
–40
–45
–50
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Single--Carrier W--CDMA Power Gain, Power Added
Efficiency and ACPR versus Output Power
MMRF2005N MMRF2005GN
8
RF Device Data
Freescale Semiconductor, Inc.
VDD1
C14 C15
R7
C13
R5
C5 C4
R6
VGG1
C16
C8 C7
C6
C18
R4
C9
CUT OUT AREA
C17
VDD2
C2
C10
C11
C12
C1
C3
VGG2
R1
R2
R3
Figure 9. MMRF2005N Test Circuit Component Layout — 700 MHz
Table 11. MMRF2005N Test Circuit Component Designations and Values — 700 MHz
Part
Description
Part Number
Manufacturer
C1, C4, C7
47 pF Chip Capacitors
ATC600F470JT250XT
ATC
C2, C5, C8
10 nF, 50 V Chip Capacitors
C0603C103J5RAC
Kemet
C3, C6
1 F, 50 V Chip Capacitors
GRM21BR71H105KA12L
Murata
C9, C15
10 F, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C10
13 pF Chip Capacitor
ATC100B130JT500XT
ATC
C11
7.5 pF Chip Capacitor
ATC100B7R5CT500XT
ATC
C12
6.8 pF Chip Capacitor
ATC100B6R8CT500XT
ATC
C13, C14
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C16, C17
100 F, 50 V Electrolytic Capacitors
MCGPR35V337M10X16--RH
Multicomp
C18
1.8 pF Chip Capacitor
ATC100B1R8BT500XT
ATC
R1, R2, R3, R4, R5, R6
1000 , 1/4 W Chip Resistors
CRCW12061K00FKEA
Vishay
R7
0 , 3A Chip Resistor
CRCW12060000Z0EA
Vishay
PCB
0.020, r = 3.5
RF--35
Taconic
MMRF2005N MMRF2005GN
RF Device Data
Freescale Semiconductor, Inc.
9
TYPICAL CHARACTERISTICS — 700 MHz
37
36.5
Gps, POWER GAIN (dB)
748 MHz
Gps
33
32.5
ACPR
0
54
–5
48
728 MHz
36 V = 28 Vdc
DD
35.5 IDQ1 = 106 mA, IDQ2 = 285 mA
Single--Carrier W--CDMA, 3.84 MHz
35 Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01%
34.5 Probability on CCDF
34
728 MHz
PAE
33.5
60
42
36
30
748 MHz
18
12
768 MHz
6
728 MHz
748 MHz
10
1
24
0
50
–10
–15
–20
–25
–30
ACPR (dBc)
768 MHz
PAE, POWER ADDED EFFICIENCY (%)
37.5
–35
–40
–45
–50
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single--Carrier W--CDMA Power Gain, Power Added
Efficiency and ACPR versus Output Power — 700 MHz
Table 12. Series Equivalent Input and Load
Impedance — 700 MHz
f
MHz
Zin

Zload

710
25.21 – j1.21
8.57 + j2.52
720
33.76 + j5.36
8.52 + j2.46
730
38.78 + j1.40
8.44 + j2.34
740
40.14 – j0.76
8.36 + j2.16
750
35.46 – j1.15
8.30 + j2.00
760
34.65 – j0.53
8.32 + j1.90
770
34.75 – j0.43
8.31 + j1.86
780
36.20 + j0.81
8.27 + j1.98
36.18 + j1.33
8.23 + j2.12
790
Zin
=
Device input impedance as measured from
gate to ground.
Zload =
Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
MMRF2005N MMRF2005GN
10
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MMRF2005N MMRF2005GN
RF Device Data
Freescale Semiconductor, Inc.
11
MMRF2005N MMRF2005GN
12
RF Device Data
Freescale Semiconductor, Inc.
MMRF2005N MMRF2005GN
RF Device Data
Freescale Semiconductor, Inc.
13
MMRF2005N MMRF2005GN
14
RF Device Data
Freescale Semiconductor, Inc.
MMRF2005N MMRF2005GN
RF Device Data
Freescale Semiconductor, Inc.
15
MMRF2005N MMRF2005GN
16
RF Device Data
Freescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages





Engineering Bulletins
 EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
 Electromigration MTTF Calculator
To Download Resources Specific to a Given Part Number:
1.
2.
3.
4.
Go to http://www.freescale.com/rf
Search by part number
Click part number link
Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Aug. 2015
Description
 Initial Release of Data Sheet
MMRF2005N MMRF2005GN
RF Device Data
Freescale Semiconductor, Inc.
17
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E 2015 Freescale Semiconductor, Inc.
MMRF2005N MMRF2005GN
18
Document Number: MMRF2005N
Rev. 0, 8/2015
RF Device Data
Freescale Semiconductor, Inc.