NTHS5441T1 D

NTHS5441
Power MOSFET
−20 V, −5.3 A, P−Channel ChipFET]
Features
•
•
•
•
•
Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature ChipFET Surface Mount Package
Pb−Free Package is Available
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V(BR)DSS
RDS(on) TYP
ID MAX
−20 V
46 mW @ −4.5 V
−5.3 A
S
Applications
• Power Management in Portable and Battery−Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
G
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
5 sec
Steady
State
Drain−Source Voltage
VDS
−20
V
Gate−Source Voltage
VGS
"12
V
Continuous Drain Current
(TJ = 150°C) (Note 1)
TA = 25°C
TA = 85°C
ID
IS
Operating Junction and Storage
Temperature Range
1
A
−3.9
A
PD
MARKING
DIAGRAM
PIN
CONNECTIONS
W
2.5
1.3
TJ, Tstg
ChipFET
CASE 1206A
STYLE 1
1.3
0.7
°C
−55 to +150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
D
8
1
D
1
D
7
2
D
2
D
6
3
D
3
S
5
4
G
4
8
A3 MG
G
Maximum Power Dissipation
(Note 1)
TA = 25°C
TA = 85°C
−5.3
8
−3.9
−2.8
"20
IDM
Continuous Source Current
(Note 1)
P−Channel MOSFET
A
−5.3
−3.8
Pulsed Drain Current
D
Unit
7
6
5
A3 = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
NTHS5441T1
ChipFET
3000/Tape & Reel
NTHS5441T1G
ChipFET
(Pb−Free)
3000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 13
1
Publication Order Number:
NTHS5441T1/D
NTHS5441
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum Junction−to−Ambient (Note 2)
t v 5 sec
Steady State
RqJA
Maximum Junction−to−Foot (Drain)
Steady State
RqJF
Typ
Max
40
80
50
95
15
20
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = −250 mA
−0.6
Gate−Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
Typ
Max
Unit
−1.2
V
VDS = 0 V, VGS = "12 V
"100
nA
VDS = −16 V, VGS = 0 V
−1.0
mA
VDS = −16 V, VGS = 0 V,
TJ = 85°C
−5.0
Static
Gate Threshold Voltage
On−State Drain Current (Note 3)
ID(on)
VDS v −5.0 V, VGS = −4.5 V
−20
Drain−Source On−State Resistance (Note 3)
rDS(on)
VGS = −3.6 V, ID = −3.7 A
VGS = −4.5 V, ID = −3.9 A
−
−
Forward Transconductance (Note 3)
Diode Forward Voltage (Note 3)
A
W
0.050
0.046
0.06
−
VGS = −2.5 V, ID = −3.1 A
0.070
0.083
gfs
VDS = −10 V, ID = −3.9 A
12
VSD
IS = −2.1 A, VGS = 0 V
−0.8
−1.2
V
9.7
22
nC
mhos
Dynamic (Note 4)
Total Gate Charge
QG
Gate−Source Charge
QGS
Gate−Drain Charge
QGD
Input Capacitance
Ciss
VDS = −10 V, VGS = −4.5 V,
ID = −3.9 A
1.2
3.6
pF
710
VDS = −5.0 Vdc, VGS = 0 Vdc,
f = 1.0 MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
140
Turn−On Delay Time
td(on)
14
30
22
55
42
100
35
70
30
60
Rise Time
Turn−Off Delay Time
tr
td(off)
Fall Time
tf
Source−Drain Reverse Recovery Time
trr
VDD = −10 V, RL = 10 W
ID ^ −1.0 A, VGEN = −4.5 V,
RG = 6 W
IF = −1.1 A, di/dt = 100 A/ms
2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
4. Guaranteed by design, not subject to production testing.
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2
400
ns
NTHS5441
TYPICAL ELECTRICAL CHARACTERISTICS
−3.5 V
TJ = 25°C
16
−4.5 V
−4 V
−2.5 V
12
8
−2 V
4
TJ = −55°C
16
25°C
125°C
12
8
4
VGS = −1.5 V
0
0
0
0.5
1
1.5
2
2.5
3
0
1.5
2
2.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.2
ID = −3.9 A
TJ = 25°C
0.15
0.1
0.05
0
0
1
0.5
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
2
4
3
5
TJ = 25°C
0.15
VGS = 2.5 V
0.1
VGS = 3.6 V
0.05
VGS = 4.5 V
0
2
6
10
14
18
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.6
ID = −3.9 A
VGS = −4.5 V
1.4
1.2
1
0.8
0.6
−50
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
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3
3
0.2
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
20
−3 V
−ID, DRAIN CURRENT (AMPS)
−5 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
−ID, DRAIN CURRENT (AMPS)
20
150
20
NTHS5441
TJ = 25°C
VGS = 0
C, CAPACITANCE (pF)
1200
900
Ciss
600
Coss
300
Crss
0
0
4
8
12
20
16
−VDS, DRAIN−TO−SOURCE VOLTAGE ()
NORMALIZED EFFECTIVE TRANSIENT
THERMAL IMPEDANCE
Figure 6. Capacitance Variation
5
11
QG
10
9
4
8
7
3
6
QGS
5
QGD
2
4
ID = −3.9 A
TJ = 25°C
QGD/QGS = 3.0
1
0
0
1
2
3
4
5
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1500
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
6
7
8
9
3
2
1
0
10
QG, TOTAL GATE CHARGE (nC)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
1
Duty Cycle = 0.5
0.2
0.1
0.1
PDM
0.05
t1
0.02
t2
DUTY CYCLE, D = t1/t2
PER UNIT BASE = RqJA = 80°C/W
TJM − TA = PDMZqJA(t)
SURFACE MOUNTED
Single Pulse
0.01
0.001
0.01
0.1
1
10
SQUARE WAVE PULSE DURATION (sec)
Figure 8. Normalized Thermal Transient Impedance, Junction−to−Ambient
5
−IS, SOURCE CURRENT (AMPS)
0.0001
4
VGS = 0 V
TJ = 25°C
3
2
1
0
0.1
0.3
0.5
0.7
0.9
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Diode Forward Voltage versus
Current
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4
100
1000
NTHS5441
PACKAGE DIMENSIONS
ChipFET]
CASE 1206A−03
ISSUE G
D
8
7
q
6
L
5
HE
5
6
7
8
4
3
2
1
E
1
2
3
e1
4
b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
DIM
A
b
c
D
E
e
e1
L
HE
q
c
e
A
MILLIMETERS
NOM
MAX
1.05
1.10
0.30
0.35
0.15
0.20
3.05
3.10
1.65
1.70
0.65 BSC
0.55 BSC
0.28
0.35
0.42
1.80
1.90
2.00
5° NOM
MIN
1.00
0.25
0.10
2.95
1.55
INCHES
NOM
0.041
0.012
0.006
0.120
0.065
0.025 BSC
0.022 BSC
0.014
0.011
0.071
0.075
5° NOM
MIN
0.039
0.010
0.004
0.116
0.061
0.05 (0.002)
SOLDERING FOOTPRINT*
2.032
0.08
2.032
0.08
0.457
0.018
0.635
0.025
1.727
0.068
0.457
0.018
0.711
0.028
0.66
0.026
SCALE 20:1
0.178
0.007
0.711
0.028
mm Ǔ
ǒinches
0.66
0.026
Basic
SCALE 20:1
Styles 1 and 4
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
mm Ǔ
ǒinches
MAX
0.043
0.014
0.008
0.122
0.067
0.017
0.079
NTHS5441
ChipFET is a trademark of Vishay Siliconix.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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Phone: 81−3−5773−3850
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For additional information, please contact your
local Sales Representative.
NTHS5441T1/D