NTLJF4156N D

NTLJF4156N
Power MOSFET and
Schottky Diode
30 V, 4.6 A, mCool] N−Channel, with
2.0 A Schottky Barrier Diode, 2x2 mm
WDFN Package
http://onsemi.com
MOSFET
Features
• WDFN Package Provides Exposed Drain Pad for Excellent Thermal
•
•
•
•
•
Conduction
Co−Packaged MOSFET and Schottky For Easy Circuit Layout
RDS(on) Rated at Low VGS(on) Levels, VGS = 1.5 V
Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
Low VF Schottky
This is a Pb−Free Device
Applications
V(BR)DSS
RDS(on) MAX
ID MAX (Note 1)
70 mW @ 4.5 V
30 V
4.6 A
90 mW @ 2.5 V
125 mW @ 1.8 V
250 mW @ 1.5 V
SCHOTTKY DIODE
VR MAX
VF TYP
IF MAX
30 V
0.47 V
2.0 A
• DC−DC Converters
• Li−Ion Battery Applications in Cell Phones, PDA’s, Media Players
• Color Display and Camera Flash Regulators
D
A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±8.0
V
ID
3.7
A
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
TJ = 25°C
TJ = 85°C
2.7
t≤5s
TJ = 25°C
4.6
Steady
State
PD
Power Dissipation
(Note 2)
Steady
State
W
1.5
2.3
TJ = 25°C
ID
TJ = 85°C
2.5
20
A
TJ, TSTG
−55 to
150
°C
Source Current (Body Diode) (Note 2)
IS
2.4
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm2, 2 oz. Cu.
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 4
1
1
6
2 JLMG 5
3
4
G
1
WDFN6
CASE 506AN
PIN CONNECTIONS
IDM
tp = 10 ms
SCHOTTKY DIODE
JL = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
0.71
Pulsed Drain Current
N−CHANNEL MOSFET
A
1.8
PD
TJ = 25°C
K
S
MARKING
DIAGRAM
TJ = 25°C
t≤5s
Continuous Drain
Current (Note 2)
G
K
A
1
N/C
2
6
K
5
G
4
S
D
D
3
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Publication Order Number:
NTLJF4156N/D
NTLJF4156N
SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
VRRM
30
V
DC Blocking Voltage
VR
30
V
Average Rectified Forward Current
IF
2.0
A
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 3)
RqJA
83
Junction−to−Ambient – t ≤ 5 s (Note 3)
RqJA
54
Junction−to−Ambient – Steady State Min Pad (Note 4)
RqJA
180
Peak Repetitive Reverse Voltage
THERMAL RESISTANCE RATINGS
Parameter
°C/W
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz. Cu.
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Conditions
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = 250 mA, Ref to 25°C
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V
18.1
mV/°C
TJ = 25°C
1.0
TJ = 85°C
10
IGSS
VDS = 0 V, VGS = ±8.0 V
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
Gate Threshold
Temperature Coefficient
VGS(TH)/TJ
Gate−to−Source Leakage Current
V
mA
100
nA
1.0
V
ON CHARACTERISTICS (Note 5)
Drain−to−Source On−Resistance
Forward Transconductance
0.4
0.7
2.8
RDS(on)
gFS
mV/°C
VGS = 4.5, ID = 2.0 A
47
70
mW
VGS = 2.5, ID = 2.0 A
56
90
VGS = 1.8, ID = 1.8 A
88
125
VGS = 1.5, ID = 1.5 A
133
250
VDS = 10 V, ID = 2.0 A
4.5
S
427
pF
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1.0 MHz,
VDS = 15 V
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
32
Total Gate Charge
QG(TOT)
5.4
Threshold Gate Charge
QG(TH)
0.5
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
1.24
RG
3.7
Gate Resistance
VGS = 4.5 V, VDS = 15 V,
ID = 2.0 A
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
51
6.5
nC
0.8
W
NTLJF4156N
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
td(ON)
tr
Turn−Off Delay Time
Fall Time
td(OFF)
ns
4.8
9.2
VGS = 4.5 V, VDD = 15 V,
ID = 2.0 A, RG = 2.0 W
14.2
tf
1.7
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.78
TJ = 125°C
0.62
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Time
VGS = 0 V, IS = 2.0 A
1.2
V
10.5
7.6
VGS = 0 V, dISD/dt = 100 A/ms,
IS = 2.0 A
ns
2.9
QRR
5.0
nC
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Typ
Max
Unit
Maximum Instantaneous
Forward Voltage
VF
IF = 0.1 A
Min
0.34
0.39
V
IF = 1.0 A
0.47
0.53
Maximum Instantaneous
Reverse Current
IR
VR = 30 V
17
20
VR = 20 V
3.0
8.0
VR = 10 A
2.0
4.5
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85°C unless otherwise noted)
Symbol
Test Conditions
Typ
Max
Unit
Maximum Instantaneous
Forward Voltage
Parameter
VF
IF = 0.1 A
Min
0.22
0.35
V
IF = 1.0 A
0.40
0.50
Maximum Instantaneous
Reverse Current
IR
VR = 30 V
0.22
2.5
VR = 20 V
0.11
1.6
VR = 10 V
0.06
1.2
Typ
Max
Unit
V
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Maximum Instantaneous
Forward Voltage
VF
IF = 0.1 A
0.2
0.29
IF = 1.0 A
0.4
0.47
Maximum Instantaneous
Reverse Current
IR
VR = 30 V
2.0
20
VR = 20 V
1.1
10.9
VR = 10 V
0.63
8.4
Typ
Max
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Capacitance
Symbol
Test Conditions
C
VR = 5.0 V, f = 1.0 MHz
Min
7. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
8. Surface−mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz cu.
9. Pulse Test: pulse width v 300 ms, duty cycle v2%.
10. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
3
38
Unit
pF
NTLJF4156N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
5
VGS = 1.7 V to 8 V
6
TJ = 25°C
VDS ≥ 10 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
1.6 V
4
3
1.5 V
2
1.4 V
1.3 V
1
1.2 V
0
1
3
2
4
TJ = 25°C
TJ = 100°C
TJ = −55°C
0
5
1
0.5
1.5
2.5
2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.07
VGS = 4.5 V
TJ = 100°C
0.06
0.05
TJ = 25°C
0.04
TJ = −55°C
0.03
0.02
1.0
1.5
2.5
2.0
3
0.14
TJ = 25°C
0.13
0.12
0.11
0.1
VGS = 1.8 V
0.09
0.08
0.07
VGS = 2.5 V
0.06
VGS = 4.5 V
0.05
0.04
1
2
3
4
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
5
100,000
1.6
VGS = 0 V
ID = 2 A
VGS = 4.5 V
1.4
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
2
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
4
1.2
1.0
10,000
TJ = 150°C
1000
TJ = 100°C
100
0.8
0.6
−50
−25
0
25
50
75
100
125
150
10
2
4
6
8 10 12 14 16 18 20 22 24 26 28 30
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
http://onsemi.com
4
NTLJF4156N
C, CAPACITANCE (pF)
1000
TJ = 25°C
800
600
Ciss
400
Crss
200
Coss
0
0
5
VGS
5
10
15
20
25
QT
15
4
VGS
VDS
12
3
9
QGS
2
QGD
6
1
0
1
VDS
Figure 7. Capacitance Variation
1000
3
ID = 2.0 A
TJ = 25°C
0
30
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
5
2
3
QG, TOTAL GATE CHARGE (nC)
0
6
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
3
100
IS, SOURCE CURRENT (AMPS)
VDD = 15 V
ID = 2.0 A
VGS = 4.5 V
td(off)
tf
tr
10
td(on)
1
10
RG, GATE RESISTANCE (OHMS)
VGS = 0 V
TJ = 125°C
TJ = 150°C
2
TJ = 25°C
1
0
0.3
1
100
0.6
Figure 10. Diode Forward Voltage versus Current
100
10
SINGLE PULSE
TC = 25°C
TJ = 150°C
See Note 2 on Page 1
10 ms
100 ms
1
1 ms
10 ms
0.1
0.01
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
−ID, DRAIN CURRENT (AMPS)
t, TIME (ns)
18
5
VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS)
VDS = VGS = 0 V
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
dc
10
1
100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
5
NTLJF4156N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1000
100 D = 0.5
0.2
0.1
0.05
10
*See Note 2 on Page 1
P(pk)
0.02
1
0.01
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.1
0.000001
0.00001
0.0001
0.001
0.1
0.01
t, TIME (S)
Figure 12. Thermal Response
http://onsemi.com
6
1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
10
100
1000
NTLJF4156N
I F, INSTANTANEOUS FORWARD CURRENT (AMPS)
I F , INSTANTANEOUS FORWARD CURRENT (AMPS)
TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
10
TJ = 85°C
1.0
TJ = 125°C
TJ = 25°C
TJ = −55°C
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
TJ = 85°C
TJ = 125°C
0.1
0.1
0.2
0.3
TJ = 25°C
0.4
0.5
0.6
0.7
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VF, MAXIMUM FORWARD VOLTAGE (VOLTS)
Figure 13. Typical Forward Voltage
Figure 14. Maximum Forward Voltage
I R , MAXIMUM REVERSE CURRENT (AMPS)
100E−3
100E−3
10E−3
TJ = 125°C
1.0E−3
TJ = 85°C
100E−6
10E−6
TJ = 25°C
0
10
TJ = 125°C
10E−3
1.0E−3
TJ = 85°C
100E−6
1.0E−6
100E−9
0.9
1.0E+0
1.0E+0
I R , REVERSE CURRENT (AMPS)
10
20
30
TJ = 25°C
10E−6
1.0E−6
100E−9
0
10
20
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 15. Typical Reverse Current
Figure 16. Maximum Reverse Current
30
ORDERING INFORMATION
Package
Shipping†
NTLJF4156NT1G
WDFN6
(Pb−Free)
3000 / Tape & Reel
NTLJF4156NTAG
WDFN6
(Pb−Free)
3000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
7
NTLJF4156N
PACKAGE DIMENSIONS
WDFN6, 2x2
CASE 506AN−01
ISSUE B
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.20mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
A
B
PIN ONE
REFERENCE
0.10 C
2X
ÍÍÍ
ÍÍÍ
ÍÍÍ
E
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
J
0.10 C
2X
A3
0.10 C
MILLIMETERS
MIN
MAX
0.70
0.80
0.00
0.05
0.20 REF
0.25
0.35
2.00 BSC
0.57
0.77
2.00 BSC
0.90
1.10
0.65 BSC
0.25 REF
0.20
0.30
0.15 REF
A
6X
0.08 C
C
SEATING
PLANE
D2
D2
6X
SOLDERMASK DEFINED
MOUNTING FOOTPRINT*
A1
e
L
1
2.30
6X
6X
0.35
0.43
4X
3
1
0.65
PITCH
2X E2
6X
K
6
6X
4
b
J
BOTTOM VIEW
0.25
6X
0.10 C A
0.05 C
B
2X
NOTE 3
0.72
1.05
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC).
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
8
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTLJF4156N/D