NTLJF3118N Power MOSFET and Schottky Diode 20 V, 4.6 A, mCool] N−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package http://onsemi.com MOSFET Features • WDFN 2x2 mm Package Provides Exposed Drain Pad for • • • • • V(BR)DSS Excellent Thermal Conduction Footprint Same as SC−88 Package 1.8 V VGS Rated RDS(on) Low Profile (< 0.8 mm) for Easy Fit in Thin Environments Low VF 2 A Schottky Diode This is a Pb−Free Device 20 V RDS(on) Max ID Max 65 mW @ 4.5 V 3.8 A 75 mW @ 2.5 V 2.0 A 120 mW @ 1.8 V 1.7 A SCHOTTKY DIODE VR Max VF Typ IF Max 20 V 0.41 V 2.0 A Applications • DC−DC Boost/Buck Converter • Low Voltage Hard Disk DC Power Source D A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Symbol Value Unit VDSS 20 V VGS ±12 V ID 3.8 A Steady State TA = 25°C TA = 85°C 2.8 t≤5s TA = 25°C 4.6 Steady State PD Continuous Drain Current (Note 2) Power Dissipation (Note 2) 2.2 TA = 25°C Steady State ID TA = 85°C A 2.6 1.9 0.7 IDM 18 A TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS 1.8 A Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Pulsed Drain Current tp = 10 ms Operating Junction and Storage Temperature SCHOTTKY DIODE MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 2 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size. 1 6 2 JK M G 5 G 3 4 1 WDFN6 CASE 506AN JK M G PD TA = 25°C K S N−CHANNEL MOSFET W 1.5 TA = 25°C t≤5s G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTIONS A 1 N/C 2 K 6 K 5 G 4 S D D 3 (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2006 October, 2006 − Rev. 0 1 Publication Order Number: NTLJF3118N/D NTLJF3118N SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Peak Repetitive Reverse Voltage Symbol Value Unit VRRM 20 V DC Blocking Voltage VR 20 V Average Rectified Forward Current IF 2.0 A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Symbol Max Junction−to−Ambient – Steady State (Note 3) Parameter RqJA 83 Junction−to−Ambient – t ≤ 5 s (Note 3) RqJA 58 Junction−to−Ambient – Steady State Min Pad (Note 4) RqJA 177 Unit °C/W 3. Surface Mounted on FR4 Board using 2 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size. MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min 20 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 250 mA, Ref to 25°C Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VDS = 16 V, VGS = 0 V V 10.4 mV/°C TJ = 25°C 1.0 TJ = 85°C 10 IGSS VDS = 0 V, VGS = ±8.0 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA Gate Threshold Temperature Coefficient VGS(TH)/TJ $100 mA nA ON CHARACTERISTICS (Note 5) Drain−to−Source On−Resistance 0.7 1.0 −3.0 RDS(on) Forward Transconductance 0.4 gFS V mV/°C mW VGS = 4.5, ID = 3.8 A 37 65 VGS = 2.5, ID = 2.0 A 46 75 VGS = 1.8, ID = 1.7 A 65 120 VDS = 10 V, ID =1.7 A 4.2 S 271 pF CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 43 Total Gate Charge QG(TOT) 3.7 Threshold Gate Charge QG(TH) 0.3 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 1.0 td(ON) 3.8 tr 4.7 VGS = 0 V, f = 1 MHz, VDS = 10 V VGS = 4.5 V, VDS = 10 V, ID = 3.8 A 72 nC 0.6 SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(OFF) VGS = 4.5 V, VDD = 16 V, ID = 1.0 A, RG = 2.0 W tf ns 11.1 5.8 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR VGS = 0 V, IS =1.0 A TJ = 25°C VGS = 0 V, dISD/dt = 100 A/ms, IS = 1.0 A 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 0.69 10.2 1.0 V ns NTLJF3118N SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Typ Max Unit Maximum Instantaneous Forward Voltage VF IF = 0.1 A Min 0.26 0.35 V IF = 1.0 A 0.35 0.42 Maximum Instantaneous Reverse Current IR IF = 2.0 A 0.41 0.52 VR = 20 V 0.20 5.0 VR = 10 V 0.045 1.0 Typ Max mA SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85°C unless otherwise noted) Parameter Symbol Test Conditions Min Maximum Instantaneous Forward Voltage VF IF = 0.1 A 0.18 IF = 1.0 A 0.29 Maximum Instantaneous Reverse Current IR IF = 2.0 A 0.36 VR = 20 V 4.9 VR = 10 V 1.6 Unit V mA SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125°C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Symbol Test Conditions VF IF = 0.1 A 0.13 IF = 1.0 A 0.25 IF = 2.0 A 0.33 VR = 20 V 42 VR = 10 V 13 IR Min Typ Max Unit V mA SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Capacitance Symbol Test Conditions C VR = 5.0 V, f = 1.0 MHz Min Typ Max 52.3 Unit pF ORDERING INFORMATION Package Shipping† NTLJF3118NTAG WDFN6 (Pb−Free) 3000 / Tape & Reel NTLJF3118NTBG WDFN6 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 3 NTLJF3118N TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 10 VGS = 4 V to 2.2 V 8 2.0 V TJ = 25°C ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 10 1.8 V 6 1.6 V 4 1.4 V 2 VDS ≥ 10 V 8 6 TJ = 25°C 4 TJ = 100°C 2 1.2 V 0 0.5 1 1.5 2 2.5 3 3.5 0 4 TJ = −55°C 2.5 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics TJ = 25°C ID = 3.8 A 0.09 0.08 0.07 0.06 0.05 0.04 0.03 1.0 3.0 2.0 4.0 5.0 6.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.14 TJ = 25°C 0.12 VGS = 1.8 V 0.1 0.08 VGS = 2.5 V 0.06 0.04 VGS = 4.5 V 0.02 0 1 2 10000 ID = 3.8 A VGS = 4.5 V IDSS, LEAKAGE (nA) 1.2 1.1 1.0 0.9 4 5 6 7 8 9 10 Figure 4. On−Resistance versus Drain Current and Gate Voltage 1.5 1.3 3 ID, DRAIN CURRENT (A) Figure 3. On−Resistance versus Drain Current RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.1 1.4 1.5 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 VGS = 0 V TJ = 150°C 1000 TJ = 100°C 0.8 0.7 −50 −25 0 25 50 75 100 125 150 100 2 4 6 8 10 12 14 16 18 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 4 20 NTLJF3118N VDS = 0 V TJ = 25°C Ciss 500 C, CAPACITANCE (pF) VGS = 0 V 400 300 200 Crss Coss 100 0 10 5 VGS 0 VDS 5 10 15 20 QT 4 VDS 2 QGS 0 IS, SOURCE CURRENT (AMPS) tf 10 tr td(on) 1 10 RG, GATE RESISTANCE (W) 0 4 4 1 2 3 QG, TOTAL GATE CHARGE (nC) 0 VGS = 0 V TJ = 25°C 1.5 1 0.5 0 0.4 100 8 ID = 3.8 A TJ = 25°C 2 td(off) QGD Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge 100 VDD = 16 V ID = 1.0 A VGS = 4.5 V 12 VGS 1 Figure 7. Capacitance Variation t, TIME (ns) 16 3 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) 1 20 5 VDS , DRAIN−TO−SOURCE VOLTAGE (VOLTS) 600 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 5 NTLJF3118N 10 I F, INSTANTANEOUS FORWARD CURRENT (AMPS) I F , INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) TJ = 125°C TJ = 85°C 1.0 TJ = 25°C TJ = −55°C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.0 TJ = 125°C TJ = 25°C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VF, MAXIMUM FORWARD VOLTAGE (V) Figure 11. Typical Forward Voltage Figure 12. Maximum Forward Voltage 1.0 1.0E+0 I R , MAXIMUM REVERSE CURRENT (AMPS) I R , REVERSE CURRENT (AMPS) TJ = 85°C VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.0E+0 100E−3 TJ = 125°C 100E−3 TJ = 125°C 10E−3 TJ = 85°C 1.0E−3 TJ = 25°C 100E−6 10E−6 10 0 10E−3 TJ = 85°C 1.0E−3 TJ = 25°C 100E−6 10 20 10E−6 0 10 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 13. Typical Reverse Current Figure 14. Maximum Reverse Current http://onsemi.com 6 20 NTLJF3118N PACKAGE DIMENSIONS WDFN6, 2x2 CASE 506AN−01 ISSUE B D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B PIN ONE REFERENCE 0.10 C 2X ÍÍÍ ÍÍÍ ÍÍÍ E DIM A A1 A3 b D D2 E E2 e K L J 0.10 C 2X A3 0.10 C MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 2.00 BSC 0.57 0.77 2.00 BSC 0.90 1.10 0.65 BSC 0.25 REF 0.20 0.30 0.15 REF A 6X 0.08 C A1 SOLDERING FOOTPRINT* C D2 D2 6X 1 6X 2.30 6X e L SEATING PLANE 0.35 0.43 4X 3 1 0.65 PITCH 2X E2 6X K 6 6X 4 b J BOTTOM VIEW 0.25 6X 0.10 C A 0.05 C B 2X NOTE 3 0.72 1.05 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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