Freescale Semiconductor Technical Data Document Number: MMRF5300N Rev. 0, 5/2016 RF Power GaN on SiC Transistor Depletion Mode HEMT MMRF5300N This 60 W GaN RF power transistor is optimized for wideband pulse operation from 2700 to 3500 MHz and includes input matching for extended bandwidth performance. With its high gain and ruggedness, this device is ideally suited for S--Band radar applications. 2700–3500 MHz, 60 W PEAK, 50 V WIDEBAND RF POWER GaN ON SiC TRANSISTOR Typical Wideband Performance: In 2700–3500 MHz reference circuit, VDD = 50 Vdc, IDQ = 60 mA, TA = 25°C Frequency (MHz) 2700–3500 Signal Type Pulse (300 μsec, 20% Duty Cycle) Pout (W) Gps (dB) ηD (%) 60 Peak 15.0 51.0 Typical Narrowband Performance: VDD = 50 Vdc, IDQ = 70 mA, TA = 25°C Frequency (MHz) 3500 Signal Type Pulse (300 μsec, 20% Duty Cycle) Pout (W) Gps (dB) ηD (%) 60 Peak 17.0 61.5 OM--270--2 PLASTIC Load Mismatch/Ruggedness Frequency (MHz) Signal Type 3500 (1) Pulse (300 μsec, 20% Duty Cycle) VSWR Pin (W) Test Voltage > 10:1 at All Phase Angles 2.4 Peak (3 dB Overdrive) 50 Result No Device Degradation 1 Drain Gate 2 1. Measured in 3500 MHz narrowband test circuit. Features • • • • • 2700–3500 MHz operation Plastic package enables improved thermal resistance Advanced GaN on SiC, offering high power density Input matched for extended wideband performance High ruggedness: > 10:1 VSWR (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Applications • Ideal for 2700–3500 MHz, military and civil S--Band radar pulsed applications © Freescale Semiconductor, Inc., 2016. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMRF5300N 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS 125 Vdc Gate--Source Voltage VGS –8, 0 Vdc Operating Voltage VDD 0 to +50 Vdc Maximum Forward Gate Current @ TC = 25°C IGMAX 9 mA Storage Temperature Range Tstg – 65 to +150 °C Case Operating Temperature Range TC – 55 to +150 °C Operating Junction Temperature Range (1) TJ – 55 to +225 °C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 105.3 0.53 W W/°C Symbol Value (2) Unit ZθJC 0.52 °C/W Table 2. Thermal Characteristics Characteristic Thermal Impedance, Junction to Case Pulse: Case Temperature 74°C, 60 W Peak, 300 μsec Pulse Width, 20% Duty Cycle, 50 Vdc, IDQ = 70 mA, 3500 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B, passes 500 V Machine Model (per EIA/JESD22--A115) A, passes 100 V Charge Device Model (per JESD22--C101) IV, passes 1200 V Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 150 — — Vdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 11 mAdc) VGS(th) –3.8 –3.0 –2.3 Vdc Gate Quiescent Voltage (VDS = 50 Vdc, ID = 70 mAdc, Measured in Functional Test) VGS(Q) –3.3 –3.0 –2.3 Vdc IGSS –3.4 — — mAdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = –4 Vdc) Crss — 0.5 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = –4 Vdc) Coss — 4.4 — pF Input Capacitance (3) (VDS = 50 Vdc, VGS = –4 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 23 — pF Characteristic Off Characteristics Drain--Source Breakdown Voltage (VGS = –8 Vdc, ID = 11 mAdc) On Characteristics Gate--Source Leakage Current (VDS = 0 Vdc, VGS = –5 Vdc) Dynamic Characteristics 1. Continuous use at maximum temperature will affect MTTF. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. 3. Part internally input matched. (continued) MMRF5300N 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 70 mA, Pout = 60 W Peak (12 W Avg.), f = 3500 MHz, 300 μsec Pulse Width, 20% Duty Cycle. [See note on correct biasing sequence.] Gps 16.2 17.0 Drain Efficiency ηD 59.5 61.5 — % Input Return Loss IRL — –14 –9 dB Power Gain 18.0 dB Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 70 mA Frequency (MHz) Signal Type 3500 Pulse (300 μsec, 20% Duty Cycle) VSWR > 10:1 at All Phase Angles Pin (W) Test Voltage, VDD Result 50 No Device Degradation 2.4 Peak (3 dB Overdrive) Table 6. Ordering Information Device MMRF5300NR5 Tape and Reel Information R5 Suffix = 50 Units, 24 mm Tape Width, 7--inch Reel Package OM--270--2 NOTE: Correct Biasing Sequence for GaN Depletion Mode Transistors Turning the device ON 1. Set VGS to the pinch--off (VP) voltage, typically –5 V 2. Turn on VDS to nominal supply voltage (50 V) 3. Increase VGS until IDS current is attained 4. Apply RF input power to desired level Turning the device OFF 1. Turn RF power off 2. Reduce VGS down to VP, typically –5 V 3. Reduce VDS down to 0 V (Adequate time must be allowed for VDS to reduce to 0 V to prevent severe damage to device.) 4. Turn off VGS MMRF5300N RF Device Data Freescale Semiconductor, Inc. 3 3500 MHz NARROWBAND PRODUCTION TEST FIXTURE — 3.0″ × 5.0″ (7.6 cm × 12.7 cm) R2 C8 C7 + C4 C3 C2 C5 C6 CUT OUT AREA R1 C1 C9 C10 MMRF5300N Rev. 1 D74772 Figure 2. MMRF5300N Narrowband Test Circuit Component Layout — 3500 MHz Table 7. MMRF5300N Narrowband Test Circuit Component Designations and Values — 3500 MHz Part Description Part Number Manufacturer C1 18 pF Chip Capacitor ATC600F180JT250XT ATC C2, C5, C10 12 pF Chip Capacitors ATC600F120JT250XT ATC C3 10 μF Chip Capacitor GRM31CR61H106KA12L Murata C4 47 μF, 16 V Tantalum Capacitor T491D476K016AT Kemet C6, C7 2.2 μF Chip Capacitors GRM32ER72A225KA35L Murata C8 220 μF, 100 V Electrolytic Capacitor EEV--FK2A221M Panasonic--ECG C9 0.4 pF Chip Capacitor ATC600F0R4BT250XT ATC R1 2.7 Ω, 1/4 Chip Resistor CRCW12062R7FKEA Vishay R2 0 Ω, 5 A Chip Resistor CRCW12100000Z0EA Vishay PCB Rogers RO4350B, 0.030″, εr = 3.66 D74772 MTL MMRF5300N 4 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS — 3500 MHz PRODUCTION TEST FIXTURE 70 21 60 20 50 17 Gps 16 40 15 30 14 20 13 10 12 0 10 20 30 40 50 60 70 80 0 90 17 13 VDD = 50 Vdc, f = 3500 MHz Pulse Width = 300 μsec, Duty Cycle = 20% 0 10 30 20 40 50 60 70 80 90 Pout, OUTPUT POWER (WATTS) PEAK Figure 3. Power Gain and Drain Efficiency versus Output Power Figure 4. Power Gain versus Output Power and Quiescent Drain Current 90 80 16 15 50 V 14 13 45 V 12 40 V 11 35 V 10 IDQ = 70 mA, f = 3500 MHz Pulse Width = 300 μsec Duty Cycle = 20% 30 V VDD = 25 V 0 70 mA 15 18 8 150 mA 16 19 9 IDQ = 500 mA 18 Pout, OUTPUT POWER (WATTS) PEAK 17 Gps, POWER GAIN (dB) 19 14 Pout, OUTPUT POWER (WATTS) PEAK Gps, POWER GAIN (dB) 18 ηD Gps, POWER GAIN (dB) VDD = 50 Vdc, IDQ = 70 mA, f = 3500 MHz Pulse Width = 300 μsec, Duty Cycle = 20% ηD, DRAIN EFFICIENCY (%) 19 10 20 30 40 50 60 70 80 90 VDD = 50 Vdc, IDQ = 70 mA, f = 3500 MHz Pulse Width = 300 μsec, Duty Cycle = 20% 70 –55_C TC = 25_C 60 85_C 50 40 30 20 10 0 15 20 25 35 30 40 Pin, INPUT POWER (dBm) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 5. Power Gain versus Output Power and Drain Voltage f (MHz) P1dB (W) P3dB (W) 3500 64.5 81.2 Figure 6. Output Power versus Input Power 19 Gps TC = 25_C 60 –55_C 85_C 17 16 ηD 15 50 40 25_C 85_C 30 –55_C 14 13 VDD = 50 Vdc, IDQ = 70 mA, f = 3500 MHz Pulse Width = 300 μsec, Duty Cycle = 20% 12 10 20 30 40 50 60 20 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 18 70 10 70 80 0 90 Pout, OUTPUT POWER (WATTS) PEAK Figure 7. Power Gain and Drain Efficiency versus Output Power MMRF5300N RF Device Data Freescale Semiconductor, Inc. 5 PACKAGE DIMENSIONS MMRF5300N 6 RF Device Data Freescale Semiconductor, Inc. MMRF5300N RF Device Data Freescale Semiconductor, Inc. 7 MMRF5300N 8 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION Refer to the following resources to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers To Download Resources Specific to a Given Part Number: 1. 2. 3. 4. Go to http://www.nxp.com/RF Search by part number Click part number link Choose the desired resource from the drop down menu REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 May 2016 Description • Initial Release of Data Sheet MMRF5300N RF Device Data Freescale Semiconductor, Inc. 9 How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. 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U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2016 Freescale Semiconductor, Inc. MMRF5300N Document Number: MMRF5300N Rev. 0, 5/2016 10 RF Device Data Freescale Semiconductor, Inc.