SMD Type Product specification SN7002N Feature Product Summary • N-Channel VDS • Enhancement mode RDS(on) • Logic Level ID • dv/dt rated 60 V 5 Ω 0.2 A SOT-23 Drain pin 3 Gate pin1 Source pin 2 Type Ordering Code Q67042-S4185 Tape and Reel Information Marking SN7002N Package SOT-23 E6327: 3000 pcs/reel sSN SN7002N SOT-23 Q67042-S4192 E6433: 10000 pcs/reel sSN Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25°C 0.2 TA=70°C 0.16 Pulsed drain current Unit ID puls 0.8 dv/dt 6 VGS ±20 TA=25°C Reverse diode dv/dt kV/µs IS=0.2A, VDS=48V, di/dt=200A/µs, T jmax=150°C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation V Class 1 Ptot 0.36 W -55... +150 °C TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 http://www.twtysemi.com [email protected] Tj , Tstg 55/150/56 4008-318-123 1 of 3 SMD Type Product specification SN7002N Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 350 Characteristics Thermal resistance, junction - ambient RthJA K/W at minimal footprint Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 60 - - VGS(th) 0.8 1.4 1.8 Static Characteristics Drain-source breakdown voltage V VGS=0, ID=250µA Gate threshold voltage, V GS = VDS ID=26µA Zero gate voltage drain current µA I DSS VDS=60V, VGS =0, Tj=25°C - - 0.1 VDS=60V, VGS =0, Tj=150°C - - 5 I GSS - - 10 nA RDS(on) - 3.9 7.5 Ω RDS(on) - 2.5 5 Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=4.5V, ID=0.17A Drain-source on-state resistance VGS=10V, ID=0.5A http://www.twtysemi.com [email protected] 4008-318-123 2 of 3 SMD Type Product specification SN7002N Electrical Characteristics, at T j = 25 °C, unless otherwise specified Symbol Parameter Conditions Values Unit min. typ. max. 0.09 0.17 - S pF Dynamic Characteristics Transconductance g fs VDS≥2*ID*RDS(on)max, ID=0.16A Input capacitance C iss VGS=0, VDS=25V, - 34 45 Output capacitance C oss f=1MHz - 7.2 9.6 Reverse transfer capacitance C rss - 2.8 4.2 Turn-on delay time td(on) VDD=30V, VGS=10V, - 2.4 3.6 Rise time tr ID=0.5A, RG=6Ω - 3.2 4.8 Turn-off delay time td(off) - 5.3 8 Fall time tf - 3.6 5.4 - 0.14 0.21 - 0.42 0.63 - 1 1.5 V(plateau) VDD =48V, ID = 0.5 A - 4.5 - V IS - - 0.2 A - - 0.8 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =48V, ID =0.5A VDD =48V, ID =0.5A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsedISM Inverse diode forward voltage VSD VGS=0, IF = I S - 0.83 1.2 V Reverse recovery time trr VR=30V, IF =lS , - 14.2 21.3 ns Reverse recovery charge Qrr diF/dt=100A/µs - 5.9 8.8 nC http://www.twtysemi.com [email protected] 4008-318-123 3 of 3