SUP85N15-21 New Product Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 150 0.021 @ VGS = 10 V 85 APPLICATIONS D Primary Side Switch D Automotive - 42-V EPS and ABS - DC/DC Conversion - Motor Drives D TO-220AB G DRAIN connected to TAB G D S S Top View SUP85N15-21 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 150 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 175_C) _ TC = 25_C TC = 125_C Pulsed Drain Current Repetitive Avalanche Energyb L = 0.1 mH TC = 25_C Maximum Power Dissipationb TA = 25_Cd V 85 ID IDM Avalanche Current Unit 50 180 IAR 50 EAR 125 A mJ 300c PD 2.4 W TJ, Tstg -55 to 175 _C Symbol Limit Unit Junction-to-Ambient—Free Air RthJA 62.5 Junction-to-Case (Drain) RthJC 0.4 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter _ _C/W Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. Document Number: 72003 S-21715—Rev. A, 07-Oct-02 www.vishay.com 1 SUP85N15-21 New Product Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 150 VGS(th) VDS = VGS, ID = 250 mA 2 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 120 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS V VDS = 120 V, VGS = 0 V, TJ = 125_C 50 VDS = 120 V, VGS = 0 V, TJ = 175_C 250 ID(on) VDS w 5 V, VGS = 10 V rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C 120 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea 4 gfs VDS = 15 V, ID = 30 A mA m A 0.0175 0.021 0.042 VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea nA W 0.055 25 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 4750 VGS = 0 V, VDS = 25 V, f = 1 MHz 530 pF 220 76 VDS = 75 V, VGS = 10 V, ID = 85 A Qgd 110 21 nC 26 td(on) 22 35 tr 170 250 40 60 170 250 td(off) VDD = 75 V, RL = 0.9 W ID ^ 85 A, VGEN = 10 V, RG = 2.5 W tf ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 85 Pulsed Current ISM 180 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 85 A, VGS = 0 V trr IRM(REC) Qrr IF = 50 A, di/dt = 100 A/ms m A 1.0 1.5 V 130 200 ns 8 12 A 0.52 1.2 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72003 S-21715—Rev. A, 07-Oct-02 SUP85N15-21 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 180 180 VGS = 10 thru 7 V 150 150 I D - Drain Current (A) I D - Drain Current (A) 6V 120 90 60 5V 30 120 90 60 TC = 125_C 30 25_C -55 _C 4V 0 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 180 0.04 TC = -55_C r DS(on) - On-Resistance ( W ) g fs - Transconductance (S) 150 25_C 120 125_C 90 60 30 0 0.03 VGS = 10 V 0.02 0.01 0.00 0 20 40 60 80 100 0 120 20 40 ID - Drain Current (A) 80 100 120 125 150 ID - Drain Current (A) Capacitance Gate Charge 20 7000 V GS - Gate-to-Source Voltage (V) 6000 Ciss C - Capacitance (pF) 60 5000 4000 3000 2000 Crss 1000 Coss 0 VDS = 75 V ID = 85 A 16 12 8 4 0 0 25 50 75 100 125 VDS - Drain-to-Source Voltage (V) Document Number: 72003 S-21715—Rev. A, 07-Oct-02 150 0 25 50 75 100 Qg - Total Gate Charge (nC) www.vishay.com 3 SUP85N15-21 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.8 VGS = 10 V ID = 30 A I S - Source Current (A) r DS(on) - On-Resistance (W) (Normalized) 2.4 100 2.0 1.6 1.2 0.8 TJ = 150_C 10 TJ = 25_C 0.4 0.0 -50 -25 0 25 50 75 100 125 150 1 0 175 0.3 TJ - Junction Temperature (_C) 0.9 1.2 VSD - Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 1000 190 180 V(BR)DSS (V) 100 I Dav (a) 0.6 IAV (A) @ TA = 25_C 10 ID = 1.0 mA 170 160 1 150 IAV (A) @ TA = 150_C 0.1 0.00001 0.0001 0.001 0.01 tin (Sec) www.vishay.com 4 0.1 1 140 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) Document Number: 72003 S-21715—Rev. A, 07-Oct-02 SUP85N15-21 New Product Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 1000 90 Limited by rDS(on) 75 10 ms I D - Drain Current (A) I D - Drain Current (A) 100 60 45 30 100 ms 10 10 ms 100 ms dc 1 15 0 1 ms TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) TC - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) Document Number: 72003 S-21715—Rev. A, 07-Oct-02 www.vishay.com 5