VISHAY SUP85N06-05

SUP/SUB85N06-05
New Product
Vishay Siliconix
N-Channel 60-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)
0.0052 @ VGS = 10 V
60
"85 a
"
0.0072 @ VGS = 4.5 V
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
S
SUB85N06-05
Top View
SUP85N06-05
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
"20
TC = 25_C
Continuous Drain Current (TJ = 175_C)
_
TC = 125_C
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
Maximum Power Dissipationb
L = 0.1 mH
TC = 25_C (TO-220AB and TO-263)
TA = 25_C (TO-263)d
Operating Junction and Storage Temperature Range
ID
V
"85a
"85a
IDM
"240
IAR
"75
EAR
Unit
280
A
mJ
250c
PD
3.7
W
TJ, Tstg
–55 to 175
_C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)d
Junction-to-Ambient
Junction-to-Case
Free Air (TO-220AB)
40
RthJA
RthJC
62.5
_C/W
C/W
0.6
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 71113
S-20556—Rev. C, 22-Apr-02
www.vishay.com
2-1
SUP/SUB85N06-05
New Product
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VDS = 0 V, ID = 250 mA
60
VGS(th)
VDS = VGS, ID = 250 mA
1
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 48 V, VGS = 0 V
1
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
IDSS
ID(on)
rDS(on)
V
3
VDS = 48 V, VGS = 0 V, TJ = 125_C
50
VDS = 48 V, VGS = 0 V, TJ = 175_C
250
VDS w 5 V, VGS = 10 V
120
VGS = 10 V, ID = 30 A
0.0044
0.0052
VGS = 4.5 V, ID = 20 A
0.0059
0.0072
VDS = 15 V, ID = 30 A
W
0.0085
VGS = 10 V, ID = 30 A, TJ = 175_C
gfs
mA
m
A
VGS = 10 V, ID = 30 A, TJ = 125_C
Forward Transconductancea
nA
0.010
30
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
570
Total Gate Chargec
Qg
155
Gate-Source Chargec
Qgs
28
Gate-Drain Chargec
Qgd
44
Turn-On Delay Timec
td(on)
15
25
tr
90
130
95
140
105
150
Rise Timec
Turn-Off Delay Timec
Fall Timec
td(off)
7560
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 85 A
VDD = 30 V, RL = 0.4 W
ID ^ 85 A, VGEN = 10 V, RG = 2.5 W
tf
1050
pF
220
nC
ns
Source-Drain Diode Ratings and Characteristics (TC = 25_C)b
Continuous Current
IS
75
Pulsed Current
ISM
240
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 85 A, VGS = 0 V
1.1
1.4
V
50
85
ns
IF = 85 A, di/dt = 100 A/ms
2.7
5
A
0.067
0.21
mC
trr
IRM(REC)
Qrr
A
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
2-2
Document Number: 71113
S-20556—Rev. C, 22-Apr-02
SUP/SUB85N06-05
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
250
200
VGS = 10 thru 5 V
160
I D – Drain Current (A)
I D – Drain Current (A)
200
4V
150
100
50
120
80
TC = 125_C
40
25_C
3V
–55_C
0
0
0
2
4
6
8
10
0
VDS – Drain-to-Source Voltage (V)
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
250
0.008
g fs – Transconductance (S)
200
r DS(on) – On-Resistance ( W )
TC = –55_C
25_C
150
125_C
100
50
0
VGS = 4.5 V
0.006
VGS = 10 V
0.004
0.002
0.000
0
20
40
60
80
0
100
20
40
ID – Drain Current (A)
80
100
120
ID – Drain Current (A)
Capacitance
Gate Charge
12000
20
V GS – Gate-to-Source Voltage (V)
Ciss
10000
C – Capacitance (pF)
60
8000
6000
4000
Coss
2000
Crss
0
0
VGS = 30 V
ID = 85 A
16
12
8
4
0
6
12
18
24
VDS – Drain-to-Source Voltage (V)
Document Number: 71113
S-20556—Rev. C, 22-Apr-02
30
0
60
120
180
240
300
Qg – Total Gate Charge (nC)
www.vishay.com
2-3
SUP/SUB85N06-05
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
100
1.5
I S – Source Current (A)
r DS(on) – On-Resistance (W)
(Normalized)
VGS = 10 V
ID = 85 A
1.0
0.5
0.0
–50
–25
0
25
50
75
100
125
150
TJ = 150_C
1
0
175
0.3
TJ – Junction Temperature (_C)
0.6
0.9
1.2
VSD – Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
1000
80
IAV (A) @ TA = 25_C
70
V(BR)DSS (V)
100
I Dav (a)
TJ = 25_C
10
10
ID = 250 mA
60
IAV (A) @ TA = 150_C
50
1
0.1
0.0001
0.001
0.01
tin (Sec)
www.vishay.com
2-4
0.1
1
40
–50
–25
0
25
50
75
100
125
150
175
TJ – Junction Temperature (_C)
Document Number: 71113
S-20556—Rev. C, 22-Apr-02
SUP/SUB85N06-05
New Product
Vishay Siliconix
THERMAL RATINGS
Maximum Drain Current vs.
Case Temperature
Safe Operating Area
1000
100
10 ms
80
I D – Drain Current (A)
I D – Drain Current (A)
100
60
40
Limited
by rDS(on)
1 ms
10
10 ms
100 ms
dc
1
20
0
100 ms
TC = 25_C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
TC – Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
10
Square Wave Pulse Duration (sec)
Document Number: 71113
S-20556—Rev. C, 22-Apr-02
www.vishay.com
2-5