SUP/SUB85N04-04 Vishay Siliconix N-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.004 @ VGS = 10 V 85 a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S Top View Ordering Information SUP85N04-04 SUP85N04-04—E3 (Lead (Pb)-Free) S Ordering Information SUB85N04-04 SUB85N04-04—E3 (Lead (Pb)-Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS 20 TC = 25_C Continuous Drain Current (TJ = 175_C) TC = 125_C Pulsed Drain Current IDM Avalanche Current Repetitive Avalanche Energyb Maximum Power Dissipationb ID L = 0.1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d Operating Junction and Storage Temperature Range V 85a 85a 240 IAR 70 EAR 211 PD Unit 250c 3.75 A mJ W TJ, Tstg −55 to 175 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d J Junction-to-Ambient ti t A bi t Junction-to-Case Free Air (TO-220AB) 40 RthJA RthJC 62.5 _C/W C/W 0.6 Notes a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material). Document Number: 71125 S-41261—Rev. C, 05-Jul-04 www.vishay.com 1 SUP/SUB85N04-04 Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 40 VGS(th) VDS = VGS, ID = 250 mA 2 IGSS VDS = 0 V, VGS = 20 V 100 VDS = 40 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS VDS = 40 V, VGS = 0 V, TJ = 125_C 50 VDS = 40 V, VGS = 0 V, TJ = 175_C 250 ID(on) VDS w 5 V, VGS = 10 V rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C 120 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea 4 gfs VDS = 15 V, ID = 30 A nA mA m A 0.0031 0.004 0.0055 VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea V W 0.007 30 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 7620 VGS = 0 V, VDS = 25 V, f = 1 MHz 1325 pF 710 160 VDS = 30 V,, VGS = 10 V,, ID = 85 A Qgd 250 40 nC 55 td(on) 20 35 tr 115 175 75 115 85 130 td(off) VDD = 30 V, RL = 0.47 W ID ^ 85 A, VGEN = 10 V, Rg = 2.5 W tf ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 85 Pulsed Current ISM 240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge trr IRM(REC) Qrr A IF = 85 A, VGS = 0 V 1.1 1.4 V 60 90 ns IF = 85 A, A di/dt = 100 A/ A/ms 2.6 4 A 0.08 0.15 mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71125 S-41261—Rev. C, 05-Jul-04 SUP/SUB85N04-04 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 250 VGS = 10 thru 7 V 200 6V I D − Drain Current (A) I D − Drain Current (A) 200 150 100 50 150 100 TC = 125_C 50 5V 25_C −55_C 4V 0 0 0 2 4 6 8 10 0 VDS − Drain-to-Source Voltage (V) 1 2 3 4 5 6 7 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 250 0.005 g fs − Transconductance (S) 200 r DS(on) − On-Resistance ( W ) TC = −55_C 25_C 150 125_C 100 50 0 0.004 VGS = 10 V 0.003 0.002 0.001 0.000 0 20 40 60 80 100 120 0 20 40 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) Ciss 6000 4000 Coss 2000 Crss 0 0 100 120 Gate Charge 20 10000 8000 80 ID − Drain Current (A) Capacitance 12000 60 VDS = 30 V ID = 85 A 16 12 8 4 0 8 16 24 32 VDS − Drain-to-Source Voltage (V) Document Number: 71125 S-41261—Rev. C, 05-Jul-04 40 0 60 120 180 240 300 Qg − Total Gate Charge (nC) www.vishay.com 3 SUP/SUB85N04-04 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) − On-Resiistance (Normalized) 1.6 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 VGS = 10 V ID = 30 A I S − Source Current (A) 2.0 1.2 0.8 0.4 TJ = 150_C 10 TJ = 25_C 0.0 −50 −25 0 25 50 75 100 125 150 1 0 175 0.3 TJ − Junction Temperature (_C) I Dav (a) 55 51 IAV (A) @ TA = 25_C 10 1 0.0001 0.001 0.01 tin (Sec) 4 47 39 0.1 www.vishay.com ID = 250 mA 43 IAV (A) @ TA = 150_C 0.00001 1.2 Drain Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 100 0.9 VSD − Source-to-Drain Voltage (V) V(BR)DSS (V) 1000 0.6 0.1 1 35 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) Document Number: 71125 S-41261—Rev. C, 05-Jul-04 SUP/SUB85N04-04 Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 1000 100 10 ms 100 ms 100 I D − Drain Current (A) I D − Drain Current (A) 80 60 40 20 0 10 1 Limited by rDS(on) 1 ms 10 ms 100 ms dc TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) TC − Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Safe Operating Area Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 Square Wave Pulse Duration (sec) Document Number: 71125 S-41261—Rev. C, 05-Jul-04 www.vishay.com 5