Si4834DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A 2.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Schottky Diode G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET Ordering Information: Si4834DY Si4834DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a 5.7 6.0 4.6 Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range A 30 IS TA = 25_C V 7.5 IDM PD 1.7 0.9 2.0 1.1 1.3 0.7 TJ, Tstg Unit W _C - 55 to 150 THERMAL RESISTANCE RATINGS MOSFET Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Steady-State Steady-State RthJA RthJC Schottky Typ Max Typ Max 52 62.5 53 62.5 93 110 93 110 35 40 35 40 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71183 S-31062—Rev. B, 26-May-03 www.vishay.com 1 Si4834DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.8 IGSS VDS = 0 V, VGS = "20 V Typa Max Unit "100 nA Static Gate Threshold Voltage Gate-Body Leakage VDS = 24 V, V VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, V VGS = 0 V, V TJ = 85_C On-State Drain Currentb Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb ID(on) rDS(on) DS( ) gfs VSD V 100 Ch-1 Ch 1 Ch-2 1 Ch-1 Ch 1 2000 15 Ch-2 VDS = 5 V, VGS = 10 V 20 A VGS = 10 V, ID = 7.5 A 0.018 0.022 VGS = 4.5 V, ID = 6.5 A 0.024 0.030 VDS = 15 V, ID = 7.5 A IS = 1 A, A VGS = 0 V mA 22 W S Ch-1 Ch 1 0.47 0.5 Ch-2 0.8 1.2 13 20 V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time 2 VDS = 15 V,, VGS = 10 V,, ID = 7.5 A nC 2.7 1.9 3.2 td(on) 8 16 tr 10 20 21 40 10 20 Ch-1 Ch 1 32 70 Ch-2 40 80 td(off) Fall Time tf Source Drain Reverse Recovery Time Source-Drain trr 0.5 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W IF = 1.7 17A A, di/dt = 100 A/ms W ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage g Current Irm Junction Capacitance www.vishay.com 2 CT Test Condition Min Typ Max IF = 1.0 A 0.47 0.50 IF = 1.0 A, TJ = 125_C 0.36 0.42 Vr = 30 V 0.004 0.100 Vr = 30 V, TJ = 100_C 0.7 10 Vr = - 30 V, TJ = 125_C 3.0 20 Vr = 10 V 50 Unit V mA pF Document Number: 71183 S-31062—Rev. B, 26-May-03 Si4834DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Output Characteristics Transfer Characteristics 20 20 3V VGS = 10 thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 8 4 12 8 TC = 125_C 4 25_C 2V - 55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 0.032 800 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 1000 VGS = 4.5 V VGS = 10 V 0.016 0.008 2.5 3.0 Ciss 600 400 Coss Crss 200 0.000 0 0 4 8 12 16 20 0 6 ID - Drain Current (A) 12 18 24 30 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.6 VDS = 15 V ID = 7.5 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 2.0 Capacitance On-Resistance vs. Drain Current 0.040 0.024 1.5 VGS - Gate-to-Source Voltage (V) 8 6 4 2 VGS = 10 V ID = 7.5 A 1.4 1.2 1.0 0.8 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Document Number: 71183 S-31062—Rev. B, 26-May-03 15 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si4834DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.04 20 r DS(on) - On-Resistance ( W ) I S - Source Current (A) TJ = 150_C 10 TJ = 25_C ID = 7.5 A 0.03 0.02 0.01 0.00 1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD - Source-to-Drain Voltage (V) 2 4 Threshold Voltage 8 10 Single Pulse Power 0.4 50 0.2 40 ID = 250 mA - 0.0 Power (W) V GS(th) Variance (V) 6 VGS - Gate-to-Source Voltage (V) - 0.2 30 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 93_C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71183 S-31062—Rev. B, 26-May-03 Si4834DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 20 Forward Voltage Drop 10 10 TJ = 150_C I F - Forward Current (A) I R - Reverse Current (mA) SCHOTTKY 1 30 V 0.1 24 V 0.01 TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 TJ - Temperature (_C) 1 0.0 0.3 0.6 0.9 1.2 1.5 VF - Forward Voltage Drop (V) Capacitance 200 C - Capacitance (pF) 160 120 80 Coss 40 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Document Number: 71183 S-31062—Rev. 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