Si4830DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A 2.0 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Schottky Diode G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET Ordering Information: Si4830DY Si4830DY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a 5.7 6.0 4.6 Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range A 30 IS TA = 25_C V 7.5 IDM PD 1.7 0.9 2.0 1.1 1.3 0.7 TJ, Tstg Unit W - 55 to 150 _C THERMAL RESISTANCE RATINGS MOSFET Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady-State Steady-State RthJA RthJC Schottky Typ Max Typ Max 52 62.5 53 62.5 93 110 93 110 35 40 35 40 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71161 S-31989—Rev. C, 13-Oct-03 www.vishay.com 1 Si4830DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 0.8 IGSS VDS = 0 V, VGS = "20 V Typa Max Unit "100 nA Static Gate Threshold Voltage Gate-Body Leakage VDS = 30 V, V VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, V VGS = 0 V, V TJ = 85_C On-State Drain Currentb Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb ID(on) rDS(on) DS( ) gfs VSD V Ch-1 Ch 1 1 Ch-2 100 Ch-1 Ch 1 15 2000 Ch-2 VDS = 5 V, VGS = 10 V 20 A VGS = 10 V, ID = 7.5 A 0.018 0.022 VGS = 4.5 V, ID = 6.5 A 0.024 0.030 VDS = 15 V, ID = 7.5 A IS = 1 A, A VGS = 0 V mA 22 W S Ch-1 Ch 1 0.8 1.2 Ch-2 0.47 0.5 13 20 V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time 2 VDS = 15 V,, VGS = 10 V,, ID = 7.5 A nC 2.7 0.5 3.2 td(on) 8 16 tr 10 20 21 40 10 20 Ch-1 Ch 1 40 80 Ch-2 32 70 td(off) Fall Time tf Source Drain Reverse Recovery Time Source-Drain trr VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W IF = 1.7 17A A, di/dt = 100 A/ms W ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage g Current Irm Junction Capacitance www.vishay.com 2 CT Test Condition Min Typ Max IF = 1.0 A 0.47 0.50 IF = 1.0 A, TJ = 125_C 0.36 0.42 Vr = 30 V 0.004 0.100 Vr = 30 V, TJ = 100_C 0.7 10 Vr = - 30 V, TJ = 125_C 3.0 20 Vr = 10 V 50 Unit V mA pF Document Number: 71161 S-31989—Rev. C, 13-Oct-03 Si4830DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Output Characteristics Transfer Characteristics 20 20 3V VGS = 10 thru 4 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 8 4 2V 12 8 TC = 125_C 4 25_C - 55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 VDS - Drain-to-Source Voltage (V) 1.0 0.032 800 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 1000 VGS = 4.5 V VGS = 10 V 0.016 0.008 2.5 3.0 Ciss 600 400 Coss Crss 200 0.000 0 0 4 8 12 16 20 0 6 ID - Drain Current (A) 12 18 24 30 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.6 VDS = 15 V ID = 7.5 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 2.0 Capacitance On-Resistance vs. Drain Current 0.040 0.024 1.5 VGS - Gate-to-Source Voltage (V) 8 6 4 2 VGS = 10 V ID = 7.5 A 1.4 1.2 1.0 0.8 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Document Number: 71161 S-31989—Rev. C, 13-Oct-03 15 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si4830DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.04 TJ = 150_C 10 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 20 TJ = 25_C ID = 7.5 A 0.03 0.02 0.01 0.00 1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD - Source-to-Drain Voltage (V) 2 4 Threshold Voltage 8 10 Single Pulse Power 0.4 50 0.2 40 ID = 250 mA - 0.0 Power (W) V GS(th) Variance (V) 6 VGS - Gate-to-Source Voltage (V) - 0.2 30 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 93_C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71161 S-31989—Rev. C, 13-Oct-03 Si4830DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance MOSFET 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 20 Forward Voltage Drop 10 10 TJ = 150_C 1 I F - Forward Current (A) I R - Reverse Current (mA) SCHOTTKY 30 V 0.1 24 V 0.01 TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 TJ - Temperature (_C) 1 0.0 0.3 0.6 0.9 1.2 1.5 VF - Forward Voltage Drop (V) Capacitance 200 C - Capacitance (pF) 160 120 80 Coss 40 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Document Number: 71161 S-31989—Rev. C, 13-Oct-03 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. 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