Si4924DY Vishay Siliconix Asymetrical Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 6.3 0.030 @ VGS = 4.5 V 5.4 0.0105 @ VGS = 10 V 11.5 0.0145 @ VGS = 4.5 V 10 D1 SO-8 S1 1 8 D1 G1 2 7 D2 S2 3 6 D2 G2 4 5 D2 D2 G1 D2 G2 Top View S1 Ordering Information: Si4924DY Si4924DY-T1 (with Tape and Reel) D2 S2 N-Channel 1 MOSFET N-Channel 2 MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 Parameter Symbol 10 secs Channel-2 Steady State 10 secs Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range IS 5.3 11.5 5.4 4.2 9.5 PD 30 1.3 8.6 6.9 A 40 0.9 2.2 1.15 1.4 1.0 2.4 1.25 0.9 0.64 1.5 0.80 TJ, Tstg Unit V 6.3 IDM Steady State W _C - 55 to 150 THERMAL RESISTANCE RATINGS Channel-1 Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Steady-State Steady-State RthJA RthJC Channel-2 Typ Max Typ Max 72 90 43 53 100 125 82 100 51 63 25 30 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71163 S-03950—Rev. B, 26-May-03 www.vishay.com 1 Si4924DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage Gate Body Leakage Gate-Body VGS(th) GS( h) VDS = VGS, ID = 250 mA IGSS VDS = 0 V, V VGS = "20 V VDS = 24 V, V VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 24 V, V VGS = 0 V, V TJ = 85_C On State Drain Currentb On-State Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb ID(on) D( ) rDS(on) DS( ) gfs f VSD VDS = 5 V, V VGS = 10 V Ch-1 Ch 1 0.8 Ch-2 0.8 V Ch-1 Ch 1 "100 Ch-2 "100 Ch-1 Ch 1 1 Ch-2 1 Ch-1 Ch 1 15 mA 15 Ch-2 Ch-1 Ch 1 20 Ch-2 30 A VGS = 10 V, ID = 6.3 A Ch-1 Ch 1 0.018 0.022 VGS = 10 V, ID = 11.5 A Ch-2 0.0088 0.0105 VGS = 4.5 V, ID = 5.4 A Ch-1 Ch 1 0.024 0.030 VGS = 4.5 V, ID = 10 A Ch-2 0.0115 0.0145 VDS = 15 V, ID = 6.3 A Ch-1 Ch 1 17 VDS = 15 V, ID = 11.5 A Ch-2 30 IS = 1.3 A, VGS = 0 V Ch-1 Ch 1 0.7 1.1 Ch-2 0.72 1.1 Ch-1 Ch 1 8.0 12 Channel-1 VDS = 15 V, VGS = 5 V, ID = 6.3 A Ch-2 25.5 35 Ch-1 Ch 1 1.75 Channel 2 Channel-2 VDS = 15 V, VGS = 5 V, ID = - 11.5 A Ch-2 4.5 IS = 2.2 A, VGS = 0 V nA W S V Dynamica Total Gate Charge Gate Source Charge Gate-Source Qg Qgs Gate Drain Charge Gate-Drain Qgdd Gate Resistance Rg Turn On Delay Time Turn-On Rise Time Turn Off Delay Time Turn-Off Fall Time Source Drain Reverse Recovery Time Source-Drain td(on) d( ) tr td(off) d( ff) Channel-1 Ch l1 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Channel-2 Channel 2 VDD = 15 V, RL = 15 W ID ^ 1 A, A VGEN = 10 V, V RG = 6 W tf trr Ch-1 Ch 1 3.2 Ch-2 11.5 nC Ch-1 Ch 1 1.5 6.1 Ch-2 0.5 2.4 Ch-1 Ch 1 10 20 Ch-2 15 30 Ch-1 Ch 1 5 10 Ch-2 11 20 Ch-1 Ch 1 26 50 Ch-2 58 100 Ch-1 Ch 1 8 16 Ch-2 53 100 IF = 1.3 A, di/dt = 100 A/ms Ch-1 Ch 1 30 60 IF = 2.2 A, di/dt = 100 mA/ms Ch-2 42 70 W ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2 Document Number: 71163 S-03950—Rev. B, 26-May-03 Si4924DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL−1 Output Characteristics Transfer Characteristics 30 30 VGS = 10 thru 4 V 24 I D - Drain Current (A) I D - Drain Current (A) 24 3V 18 12 6 18 12 TC = 125_C 6 25_C 1V - 55_C 2V 0 0 2 4 6 8 0 0.0 10 0.5 VDS - Drain-to-Source Voltage (V) 1.0 r 0.04 800 0.03 VGS = 4.5 V VGS = 10 V 2.5 3.0 3.5 4.0 Ciss 600 400 Coss Crss 200 0.01 0 0.00 0 6 12 18 24 0 30 6 ID - Drain Current (A) 12 18 24 30 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 10 1.8 VDS = 15 V ID = 6.3 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 2.0 Capacitance 1000 C - Capacitance (pF) DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 0.05 0.02 1.5 VGS - Gate-to-Source Voltage (V) 8 6 4 1.6 VGS = 10 V ID = 6.3 A 1.4 1.2 1.0 0.8 2 0.6 0 0 3 6 9 Qg - Total Gate Charge (nC) Document Number: 71163 S-03950—Rev. B, 26-May-03 12 15 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si4924DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL−1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.10 DS(on) - On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C r I S - Source Current (A) 40 0.08 0.06 0.04 ID = 6.3 A 0.02 0.00 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.6 100 80 ID = 250 mA 0.2 Power (W) V GS(th) Variance (V) 0.4 - 0.0 - 0.2 60 40 - 0.4 - 0.6 20 - 0.8 - 1.0 - 50 0 - 25 0 25 50 75 100 TJ - Temperature (_C) 125 150 0.001 0.01 0.1 1 10 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 100_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71163 S-03950—Rev. B, 26-May-03 Si4924DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL−1 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL−2 Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 40 3V 30 20 10 30 20 TC = 125_C 10 25_C 1, 2 V - 55_C 0 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.020 3500 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 3000 0.016 VGS = 4.5 V 0.012 VGS = 10 V 0.008 2500 Ciss 2000 1500 Coss 1000 0.004 500 0.000 Crss 0 0 10 20 30 ID - Drain Current (A) Document Number: 71163 S-03950—Rev. B, 26-May-03 40 50 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) www.vishay.com 5 Si4924DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL−2 Gate Charge On-Resistance vs. Junction Temperature 1.6 VDS = 15 V ID = 11.5 A 8 6 4 2 1.2 1.0 0.8 0 0 10 20 30 40 VGS = 10 V ID = 11.5 A 1.4 r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 10 0.6 - 50 50 - 25 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage DS(on) - On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C r I S - Source Current (A) 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.04 0.03 0.02 ID = 11.5 A 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 0.4 100 0.2 80 ID = 250 mA - 0.0 Power (W) V GS(th) Variance (V) 50 0.05 VSD - Source-to-Drain Voltage (V) - 0.2 60 40 - 0.4 20 - 0.6 - 0.8 - 50 www.vishay.com 6 25 TJ - Junction Temperature (_C) 50 1 0.0 0 0 - 25 0 25 50 75 100 TJ - Temperature (_C) 125 150 0.001 0.01 0.1 1 10 Time (sec) Document Number: 71163 S-03950—Rev. B, 26-May-03 Si4924DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) CHANNEL−2 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 82_C/W 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 Document Number: 71163 S-03950—Rev. B, 26-May-03 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 7