Si4500BDY Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.020 @ VGS = 4.5 V 9.1 0.030 @ VGS = 2.5 V 7.5 0.060 @ VGS = −4.5 V −5.3 0.100 @ VGS = −2.5 V −4.1 D TrenchFETr Power MOSFET S2 SO-8 S1 1 8 D G1 2 7 D S2 3 6 D G2 4 5 D G2 D Top View G1 Ordering Information: Si4500BDY Si4500BDY-T1 (with Tape and Reel) Si4500BDY—E3 (Lead (Pb)-Free) Si4500BDY-T1—E3 (Lead (Pb)-Free with Tape and Reel) S1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Symbol 10 sec. P-Channel Steady State 10 sec. Steady State Drain-Source Voltage VDS 20 −20 Gate-Source Voltage VGS "12 "12 Continuous Drain Current (TJ = 150_C)a, b TA = 25_C TA = 70_C Pulsed Drain Current ID 9.1 6.6 −5.3 7.3 5.3 −4.9 IDM Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V −3.8 −3.1 30 −20 2.1 1.1 −2.1 −1.1 2.5 1.3 2.5 1.3 1.6 0.8 1.6 0.8 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS N-Channel Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady-State Steady-State RthJA RthJF P- Channel Typ Max Typ Max 40 50 41 50 75 95 75 95 20 22 23 26 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec Document Number: 72281 S-41428—Rev. B, 26-Jul-04 www.vishay.com 1 Si4500BDY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage Gate Body Leakage Gate-Body VGS(th) GS( h) IGSS VDS = VGS, ID = 250 mA N-Ch 0.6 1.5 VDS = VGS, ID = −250 mA P-Ch −0.6 −1.5 VDS = 0 V, V VGS = "12 V VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current On State Drain Currentb On-State Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb IDSS ID(on) D( ) rDS(on) DS( ) gfs f VSD N-Ch "100 P-Ch "100 N-Ch 1 VDS = −16 V, VGS = 0 V P-Ch −1 VDS = 20 V, VGS = 0 V, TJ = 55_C N-Ch 5 VDS = −16 V, VGS = 0 V, TJ = 55_C P-Ch VDS = 5 V, VGS = 4.5 V N-Ch 30 VDS = −5 V, VGS = −4.5 V P-Ch −20 VGS = 4.5 V, ID = 9.1 A N-Ch 0.016 0.020 VGS = −4.5 V, ID = −5.3 A P-Ch 0.048 0.060 N-Ch 0.024 0.030 VGS = −2.5 V, ID = −1 A P-Ch 0.082 0.100 VDS = 15 V, ID = 9.1 A N-Ch 29 VDS = −15 V, ID = −5.3 A P-Ch 11 IS = 2.1 A, VGS = 0 V N-Ch 0.8 1.2 IS = −2.1 A, VGS = 0 V P-Ch −0.8 −1.2 N-Ch 11 17 P-Ch 6.0 9 N-Ch 2.5 P-Ch 1.3 N-Ch 3.2 P-Ch 1.6 N-Ch 35 50 P-Ch 20 30 N-Ch 50 80 P-Ch 35 60 N-Ch 31 50 P-Ch 55 85 N-Ch 15 30 P-Ch 35 60 IF = 2.1 A, di/dt = 100 A/ms N-Ch 30 60 IF = −2.1 A, di/dt = 100 A/ms P-Ch 25 50 VGS = 2.5 V, ID = 3.3 A V nA mA −5 A W S V Dynamica Total Gate Charge Qg Gate Source Charge Gate-Source Qgs Gate Drain Charge Gate-Drain Qgdd Turn On Delay Time Turn-On td(on) d( ) Rise Time Turn Off Delay Time Turn-Off tr td(off) d( ff) Fall Time tf Source Drain Reverse Recovery Time Source-Drain trr N-Channel VDS = 10 V, VGS = 4.5 V, ID = 9.1 A P-Channel VDS = −10 10 V, V VGS = −4.5 45V V, ID = −5.3 53A N-Channel N Ch l VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W P-Channel VDD = −10 10 V, V RL = 10 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W nC ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2 Document Number: 72281 S-41428—Rev. B, 26-Jul-04 Si4500BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Output Characteristics 30 2.5 V 25 ID − Drain Current (A) 25 ID − Drain Current (A) Transfer Characteristics 30 VGS = 5 thru 3 V 20 15 2V 10 5 2 3 4 10 TC = 125_C 25_C −55_C 0 1 15 5 1.5 V 0 20 0 0.0 5 0.5 VDS − Drain-to-Source Voltage (V) 1.0 2.5 3.0 Capacitance 1600 0.07 1400 0.06 1200 C − Capacitance (pF) r DS(on)− On-Resistance ( W ) On-Resistance vs. Drain Current 0.05 0.04 VGS = 2.5 V 0.02 2.0 VGS − Gate-to-Source Voltage (V) 0.08 0.03 1.5 VGS = 4.5 V Ciss 1000 800 600 Coss 400 0.01 200 0.00 0 Crss 0 5 10 15 20 25 30 0 4 12 16 20 VDS − Drain-to-Source Voltage (V) ID − Drain Current (A) Gate Charge On-Resistance vs. Junction Temperature 5 1.6 VDS = 10 V ID = 9.1 A 4 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 8 3 2 1 VGS = 4.5 V ID = 9.1 A 1.2 1.0 0.8 0 0 2 4 6 8 Qg − Total Gate Charge (nC) Document Number: 72281 S-41428—Rev. B, 26-Jul-04 10 12 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 3 Si4500BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) N−CHANNEL Source-Drain Diode Forward Voltage 30 On-Resistance vs. Gate-to-Source Voltage 0.08 0.07 r DS(on)− On-Resistance ( W ) I S − Source Current (A) TJ = 150_C 10 TJ = 25_C ID = 9.1 A 0.06 0.05 ID = 3.3 A 0.04 0.03 0.02 0.01 0 0 0.3 0.6 0.9 1.2 0.00 1.5 0 1 VSD − Source-to-Drain Voltage (V) 3 4 5 VGS − Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 80 70 ID = 250 mA 0.2 60 50 Power (W) VGS(th) Variance (V) 2 −0.0 40 −0.2 30 20 −0.4 10 −0.6 −50 −25 0 25 50 75 100 125 0 0.001 150 0.01 TJ − Temperature (_C) 0.1 1 10 100 600 Time (sec) 100 Safe Operating Area rDS(on) Limited IDM Limited P(t) = 0.0001 I D − Drain Current (A) 10 P(t) = 0.001 1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 P(t) = 1 0.1 dc BVDSS Limited 0.01 0.1 P(t) = 10 TA = 25_C Single Pulse 1 10 100 VDS − Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72281 S-41428—Rev. B, 26-Jul-04 Si4500BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 N−CHANNEL Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 75_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 10−3 10−2 Normalized Effective Transient Thermal Impedance 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 10−1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL Output Characteristics 20 Transfer Characteristics 20 VGS = 5 thru 3.5 V TC = −55_C 3V 16 I D − Drain Current (A) I D − Drain Current (A) 16 12 2.5 V 8 2V 4 25_C 125_C 12 8 4 1.5 V 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) Document Number: 72281 S-41428—Rev. B, 26-Jul-04 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS − Gate-to-Source Voltage (V) www.vishay.com 5 Si4500BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL On-Resistance vs. Drain Current Capacitance 800 700 0.16 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) 0.20 VGS = 2.5 V 0.12 0.08 VGS = 4.5 V Ciss 600 500 400 300 Coss 200 0.04 100 0.00 Crss 0 0 4 8 12 16 0 20 4 ID − Drain Current (A) Gate Charge 20 On-Resistance vs. Junction Temperature VDS = 10 V ID = 5.3 A VGS = 4.5 V ID = 5.3 A 4 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 16 1.6 3 2 1 0 0 1 2 3 4 5 6 7 1.2 1.0 0.8 0.6 −50 8 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage r DS(on) − On-Resistance ( W ) TJ = 150_C TJ = 25_C 0.16 0.12 ID = 1 A ID = 5.3 A 0.08 0.04 0.00 0.3 0.6 0.9 1.2 VSD − Source-to-Drain Voltage (V) www.vishay.com 50 0.20 10 1 0.0 25 TJ − Junction Temperature (_C) 20 I S − Source Current (A) 12 VDS − Drain-to-Source Voltage (V) 5 6 8 1.5 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) Document Number: 72281 S-41428—Rev. B, 26-Jul-04 Si4500BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL Threshold Voltage 0.4 Single Pulse Power 80 70 0.3 ID = 250 mA 50 Power (W) VGS(th) Variance (V) 60 0.2 0.1 40 30 0.0 20 −0.1 10 −0.2 −50 −25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ − Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area 100 IDM Limited rDS(on) Limited P(t) = 0.0001 I D − Drain Current (A) 10 P(t) = 0.001 1 0.1 P(t) = 0.01 ID(on) Limited P(t) = 0.1 P(t) = 1 TA = 25_C Single Pulse P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 75_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 Document Number: 72281 S-41428—Rev. B, 26-Jul-04 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 www.vishay.com 7 Si4500BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) P-CHANNEL Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 www.vishay.com 8 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72281 S-41428—Rev. B, 26-Jul-04