TF202THC-4-TL-H - ON Semiconductor

Ordering number : ENA1285B
TF202THC
N-Channel JFET
http://onsemi.com
20V, 140 to 350μA, 1.0mS, VTFP
Features
•
•
•
•
•
•
Ultrasmall package facilitates miniaturization in end products
Especially suited for use in electret condenser microphone for audio equipments and telephones
Excellent voltage characteristics
Excellent transient characteristics
Adoption of FBET process
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Gate to Drain Voltage
Conditions
Ratings
Unit
VGDO
IG
Gate Current
Allowable Power Dissipation
Drain Current
ID
PD
Junction Temperature
Tj
Storage Temperature
Tstg
--20
V
10
mA
1
mA
100
mW
150
°C
--55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
Product & Package Information
unit : mm (typ)
7031A-001
• Package
: VTFP
• JEITA, JEDEC
: SC-106A
• Minimum Packing Quantity : 8,000 pcs./reel
1.4
0.1
TF202THC-4-TL-H
TF202THC-5-TL-H
Packing Type: TL
Marking
2
RANK
LOT No.
0.8
1
E
LOT No.
3
0 to 0.02
0.2
1.2
0.2
0.25
TL
0.2
0.45
0.34
Electrical Connection
0.07
0.07
1
1
2
3
1 : Drain
2 : Source
3 : Gate
3
VTFP
2
Semiconductor Components Industries, LLC, 2014
July, 2014
71014 TKIM/82008GB TKIM TC-00001480 No. A1285-1/6
TF202THC
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Gate to Drain Breakdown Voltage
Conditions
Ratings
min
typ
Cutoff Voltage
V(BR)GDO
VGS(off)
IG=--100μA
VDS=5V, ID=1μA
--0.2
Drain Current
IDSS
VDS=5V, VGS=0V
140*
max
--20
Forward Transfer Admittance
| yfs |
VDS=5V, VGS=0V, f=1kHz
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
VDS=5V, VGS=0V, f=1MHz
VDS=5V, VGS=0V, f=1MHz
0.5
Unit
V
--0.6
--1.0
V
350*
μA
1.0
mS
3.5
pF
0.65
pF
[Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit.]
Voltage Gain
GV
VIN=10mV, f=1kHz
--3.0
Reduced Voltage Characteristic
ΔGVV
VIN=10mV, f=1kHz, VCC=4.5V → 1.5V
--1.2
Frequency Characteristic
ΔGvf
f=1kHz to 110Hz
Input Impedance
ZIN
f=1kHz
Output Impedance
ZO
f=1kHz
Total Harmonic Distortion
THD
Output Noise Voltage
VNO
VIN=30mV, f=1kHz
VIN=0V, A Curve
dB
--3.5
dB
--1.0
dB
25
MΩ
1000
Ω
1.2
%
--110
dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
* : The TF202THC is classified by IDSS as follows : (unit : μA)
Rank
IDSS
4
140 to 240
5
210 to 350
Test Circuit
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
1kΩ
VCC=4.5V
VCC=1.5V
15pF
33μF
+
VTVM V
THD
B A
OSC
Output Impedance
Ordering Information
Package
Shipping
TF202THC-4-TL-H
Device
VTFP
8,000pcs./reel
TF202THC-5-TL-H
VTFP
8,000pcs./reel
memo
Pb Free and Halogen Free
No. A1285-2/6
TF202THC
ID -- VDS
450
400
400
Drain Current, ID -- μA
450
VGS=0V
250
--0.1V
150
--0.2V
--0.3V
--0.4V
0
0
1
2
3
4
5
6
--0.5V
7
8
9
50
--0.3V
--0.4V
360
400
320
350
300
A
0μ
200
ID
150
A
0μ
25
A
0μ
4
280
240
200
160
120
40
--0.6
--0.5
--0.4
--0.3
--0.2
--0.1
Gate to Source Voltage, VGS -- V
| yfs | -- IDSS
1.3
--0.9
--0.8
--0.7
--0.6
--0.5
--0.4
--0.3
--0.2
Gate to Source Voltage, VGS -- V
IT02312
1.0
0.9
0.8
0.7
0.6
--0
IT02313
VDS=5V
ID=1μA
-0.65
1.1
--0.1
VGS(off) -- IDSS
-0.70
Cutoff Voltage, VGS(off) -- V
1.2
0
--1.0
0
VDS=5V
VGS=0V
f=1kHz
5
IT03015
VDS=5V
80
15
0
--0.7
--0.5V
3
ID -- VGS
400
450
5
=3
SS
2
Drain to Source Voltage, VDS -- V
IT02310
VDS=5V
250
1
°C
Drain Current, ID -- μA
--0.2V
0
50
Forward Transfer Admittance, | yfs | -- mS
100
10
ID -- VGS
100
-0.60
-0.55
-0.50
-0.45
-0.40
-0.35
0.5
-0.30
0
100
200
300
Drain Current, IDSS -- μA
400
500
IT02314
0
Ciss -- VDS
100
200
VGS=0V
f=1MHz
10
7
5
3
2
1.0
300
Drain Current, IDSS -- μA
400
500
IT02315
Crss -- VDS
5
Reverse Transfer Capacitance, Crss -- pF
2
Input Capacitance, Ciss -- pF
--0.1V
150
0
Drain to Source Voltage, VDS -- V
500
200
25
50
VGS=0V
250
--2
100
300
Ta
=7
5°
C
200
350
5°
C
350
300
ID -- VDS
500
Drain Current, ID -- μA
Drain Current, ID -- μA
500
VGS=0V
f=1MHz
3
2
1.0
7
5
3
2
0.1
7
1.0
2
3
5
7
10
Drain to Source Voltage, VDS -- V
2
3
IT03814
7
1.0
2
3
5
7
10
Drain to Source Voltage, VDS -- V
2
3
IT03815
No. A1285-3/6
TF202THC
GV : VCC=4.5V
VIN=10mV
f=1kHz
RL=1.0kΩ
Cin=15pF
IDSS : VDS=5.0V
--1
--2
--3
--4
--5
--6
--7
0
100
300
Drain Current, IDSS -- μA
400
THD : VCC=4.5V
VIN=30mV
f=1kHz
RL=1.0kΩ
Cin=15pF
IDSS : VDS=5.0V
2.0
1.5
1.0
0.5
--0.9
--1.1
ΔGVV : VCC=4.5V→1.5V
VIN=10mV
f=1kHz
RL=1.0kΩ
Cin=15pF
IDSS : VDS=5.0V
--1.3
--1.5
--1.7
100
200
300
Drain Current, IDSS -- μA
400
500
IT13911
THD -- VIN
100
THD : VCC=4.5V
f=1kHz
IDSS : VDS=5.0V
250μA
10
150μA
I DSS=
350μA
1.0
0.1
0
100
200
300
Drain Current, IDSS -- μA
400
0
500
IT13912
31
30
29
28
100
150
ZO : VCC=4.5V
VIN=10mV
f=1kHz
IDSS : VDS=5.0V
950
27
200
IT02316
ZO -- IDSS
960
Output Impedance, ZO -- Ω
ZIN :VCC=4.5V
VIN=10mV
f=1kHz
IDSS : VDS=5.0V
50
Input Voltage, VIN -- mV
ZIN -- IDSS
32
Input Impedance, ZIN -- MΩ
--0.7
0
0
940
930
920
910
900
26
0
100
200
300
Drain Current, IDSS -- μA
400
500
IT02323
0
VNO -- IDSS
VNO : VCC=4.5V
VIN=0V, ACurve
RL=1.0kΩ
Cin=15pF
IDSS : VDS=5.0V
--112
--113
--114
100
200
--115
--116
--117
--118
--119
--120
300
Drain Current, IDSS -- μA
400
500
IT02324
PD -- Ta
120
Allowable Power Dissipation, PD -- mW
--111
Output Noise Voltage, VNO -- dB
ΔGVV -- IDSS
--0.5
500
IT13910
THD -- IDSS
2.5
Total Harmonic Distortion, THD -- %
200
Total Harmonic Distortion, THD -- %
Voltage Gain, GV -- dB
Reduced Voltage Characteristic, ΔGVV -- dB
GV -- IDSS
0
100
80
60
40
20
0
0
100
200
300
Drain Current, IDSS -- μA
400
500
IT13913
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT02317
No. A1285-4/6
TF202THC
Outline Drawing
TF202THC-4-TL-H, TF202THC-5-TL-H
Land Pattern Example
Mass (g) Unit
0.0012 mm
* For reference
Unit: mm
1.1
0.4
0.5
0.45
0.45
0.45 0.45
No. A1285-5/6
TF202THC
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PS No. A1285-6/6