SUM110N08-05 Vishay Siliconix N-Channel 75-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 75 0.0048 at VGS = 10 V 110a • TrenchFET® Power MOSFETS • Low Thermal Resistance Package Available RoHS* COMPLIANT APPLICATIONS • High Current • DC/DC Converters D TO-263 G G D S Top View S Ordering Information: SUM110N08-05 SUM110N08-05-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 75 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy b Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TA = 25 °Cd Operating Junction and Storage Temperature Range ID V 110a 110a IDM 440 IAR 75 EAR 280 PD Unit 437.5c 3.7 A mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 0.4 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mount d Junction-to-Case (Drain) °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71705 S-80108-Rev. D, 21-Jan-08 www.vishay.com 1 SUM110N08-05 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VDS = 0 V, ID = 250 µA 75 VGS(th) VDS = VGS, ID = 250 µA 2.5 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ± 100 VDS = 75 V, VGS = 0 V 1 VDS = 75 V, VGS = 0 V, TJ = 125 °C 50 VDS = 75 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 5 V, VGS = 10 V ID(on) 120 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea V gfs VDS = 15 V, ID = 30 A 0.0048 0.0084 VGS = 10 V, ID = 30 A, TJ = 175 °C Forward Transconductancea µA A 0.0038 VGS = 10 V, ID = 30 A, TJ = 125 °C rDS(on) nA Ω 0.0125 30 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Turn-On Delay Timec td(on) Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) 7900 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 950 550 145 VDS = 35 V, VGS = 10 V, ID = 110 A 215 nC 30 45 VDD = 35 V, RL = 0.4 Ω ID ≅ 110 A, VGEN = 10 V, RG = 2.5 Ω tf Source-Drain Diode Ratings and Characteristics TC = 25 25 40 200 300 65 100 165 250 °Cb IS 110 Pulsed Current ISM 440 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 110 A, VGS = 0 V trr IRM(REC) Qrr ns IF = 85 A, di/dt = 100 A/µs A 1.0 1.5 V 80 120 ns 4 7 A 0.16 0.30 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71705 S-80108-Rev. D, 21-Jan-08 SUM110N08-05 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 250 VGS = 10 thru 6 V 200 I D - Drain Current (A) I D - Drain Current (A) 200 150 5V 100 150 100 TC = 125 °C 50 50 25 °C - 55 °C 4V 0 0 0 2 4 6 8 0 10 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.0075 300 TC = - 55 °C r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 250 25 °C 200 125 °C 150 100 50 VGS = 10 V 0.0045 0.0030 0.0015 0.0000 0 0 20 40 60 80 100 0 120 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 120 20 12000 V GS - Gate-to-Source Voltage (V) 10000 Ciss C - Capacitance (pF) 0.0060 8000 6000 4000 Crss Coss 2000 VDS = 35 V ID = 85 A 16 12 8 4 0 0 0 15 30 45 60 75 0 50 100 150 200 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 71705 S-80108-Rev. D, 21-Jan-08 250 www.vishay.com 3 SUM110N08-05 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 100 V GS = 10 V ID = 30 A I S - Source Current (A) (Normalized) r DS(on) - On-Resistance 2.5 2.0 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 T J - Junction Temperature (°C) 1.2 Source-Drain Diode Forward Voltage 1000 100 95 V(BR)DSS (V) 100 I Dav (a) 0.9 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature IAV (A) at TA = 25 °C 10 1 0.6 ID = 10 mA 90 85 IAV (A) at TA = 150 °C 80 0.1 0.00001 www.vishay.com 4 0.0001 0.001 0.01 0.1 1 75 - 50 - 25 0 25 50 75 100 125 tin (s) T J - Junction Temperature (°C) Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature 150 175 Document Number: 71705 S-80108-Rev. D, 21-Jan-08 SUM110N08-05 Vishay Siliconix THERMAL RATINGS 1000 120 100 10 µs I D - Drain Current (A) I D - Drain Current (A) 100 80 ID = 250 µA 60 40 100 µs Limited by rDS(on)* 10 10 ms 100 ms DC 1 TC = 25 °C Single Pulse 20 0 0 25 50 75 100 125 150 0.1 0.1 175 TC - Ambient Temperature (°C) * VGS Maximum Drain Current vs. Case Temperature 1 ms 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71705. Document Number: 71705 S-80108-Rev. D, 21-Jan-08 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000