SUM110N08-10 Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.010 @ VGS = 10 V 110 D TrenchFETr Power MOSFET D New Low Thermal Resistance Package APPLICATIONS D Automotive - Boardnet 42-VEP and ABS - Motor Drives D High Current D DC/DC Converters D TO-263 G G D S Top View S SUM110N08-10 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 75 Gate-Source Voltage VGS "20 TC = 25_C Continuous Drain Current (TJ = 175_C) _ TC = 125_C Pulsed Drain Current Repetitive Avalanche Energya L = 0.1 mH TC = 25_C Maximum Power Dissipationa TA = 25_C c Operating Junction and Storage Temperature Range V 110 ID IDM Avalanche Current Unit 63a 350 IAR 75 EAR 280 A mJ 200b PD 3.7 W TJ, Tstg -55 to 175 _C Symbol Limit Unit RthJA 40 RthJC 0.75 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case PCB Mountc _ _C/W Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). Document Number: 71838 S-21863—Rev. B, 21-Oct-02 www.vishay.com 1 SUM110N08-10 Vishay Siliconix SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VDS = 0 V, ID = 250 mA 75 VGS(th) VDS = VGS, ID = 250 mA 2.5 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 60 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS V VDS = 60 V, VGS = 0 V, TJ = 125_C 50 VDS = 60 V, VGS = 0 V, TJ = 175_C 250 ID(on) VDS w 5 V, VGS = 10 V rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C 120 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea 4.0 gfs VDS = 15 V, ID = 30 A mA m A 0.0055 0.010 0.0185 VGS = 10 V, ID = 30 A, TJ = 175_C Forward Transconductancea nA W 0.0245 30 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 5250 VGS = 0 V, VDS = 25 V, f = 1 MHz 700 pF 310 90 VDS = 35 V, VGS = 10 V, ID = 110 A Qgd 165 24 nC 27 td(on) 20 30 tr 100 150 45 70 75 115 td(off) VDD = 35 V, RL = 0.4 W ID ^ 110 A, VGEN = 10 V, RG = 2.5 W tf ns Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current IS 110 Pulsed Current ISM 350 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 110 A, VGS = 0 V 1.0 1.5 V 75 120 ns IF = 85 A, di/dt = 100 A/ms m 3.5 7 A 0.13 0.30 mC trr IRM(REC) Qrr A Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71838 S-21863—Rev. B, 21-Oct-02 SUM110N08-10 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 250 200 VGS = 10 thru 6 V 160 I D - Drain Current (A) I D - Drain Current (A) 200 150 100 5V 50 120 80 TC = 125_C 40 25_C -55 _C 0 0 0 2 4 6 8 10 0 VDS - Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 200 0.010 g fs - Transconductance (S) 160 r DS(on) - On-Resistance ( W ) TC = -55_C 25_C 120 125_C 80 40 0 0.008 VGS = 10 V 0.006 0.004 0.002 0.000 0 15 30 45 60 75 90 0 20 40 ID - Drain Current (A) 80 100 120 150 180 ID - Drain Current (A) Capacitance Gate Charge 20 8000 V GS - Gate-to-Source Voltage (V) 7000 C - Capacitance (pF) 60 Ciss 6000 5000 4000 3000 2000 Crss Coss 1000 0 VDS = 35 V ID = 85 A 16 12 8 4 0 0 15 30 45 60 VDS - Drain-to-Source Voltage (V) Document Number: 71838 S-21863—Rev. B, 21-Oct-02 75 0 30 60 90 120 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM110N08-10 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 I S - Source Current (A) r DS(on) - On-Resistance (W) (Normalized) VGS = 10 V ID = 30 A 1.5 1.0 TJ = 150_C 0.5 0.0 -50 -25 0 25 50 75 100 125 150 1 0 175 0.3 TJ - Junction Temperature (_C) 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 1000 100 94 V(BR)DSS (V) 100 I Dav (a) TJ = 25_C 10 IAV (A) @ TA = 25_C 10 ID = 250 mA 88 82 1 76 IAV (A) @ TA = 150_C 0.1 0.00001 0.0001 0.001 0.01 tin (Sec) www.vishay.com 4 0.1 1 70 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) Document Number: 71838 S-21863—Rev. B, 21-Oct-02 SUM110N08-10 Vishay Siliconix THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 1000 120 100, 10 ms 100 I D - Drain Current (A) I D - Drain Current (A) 100 80 60 40 10 Limited by rDS(on) 10 ms 100 ms dc 1 20 0 1 ms TC = 25_C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) TC - Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (sec) Document Number: 71838 S-21863—Rev. B, 21-Oct-02 www.vishay.com 5