Power Transistors 2SD1264, 2SD1264A Silicon NPN triple diffusion planar type For low-frequency power amplification For TV vertical deflection output Complementary to 2SB0940, 2S0940A 10.0±0.2 14.0±0.5 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 200 V Collector-emitter voltage 2SD1264 (Base open) 2SD1264A VCEO 150 V Emitter-base voltage (Collector open) VEBO IC ICP TC = 25°C Collector power PC dissipation 4.2±0.2 7.5±0.2 1.4±0.1 0.8±0.1 6 V 2 A 3 A 30 W 1.3±0.2 0.5+0.2 –0.1 2.54±0.3 5.08±0.5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package 1 2 3 180 Peak collector current φ 3.1±0.1 Solder Dip (4.0) ■ Absolute Maximum Ratings Ta = 25°C Collector current 2.7±0.2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 ■ Features 4.2±0.2 5.5±0.2 M Di ain sc te on na tin nc ue e/ d 0.7±0.1 Unit: mm 2.0 Junction temperature Tj Storage temperature Tstg 150 °C −55 to +150 °C Parameter ce /D isc on tin ue ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SD1264 2SD1264A Conditions Min Typ Max Unit VCBO IC = 50 µA, IE = 0 200 V VCEO IC = 5 mA, IB = 0 150 V 180 IE = 500 µA, IC = 0 VBE VCE = 10 V, IC = 400 mA Collector-base cutoff current (Emitter open) ICBO VCB = 200 V, IE = 0 50 µA Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0 50 µA Forward current transfer ratio hFE1 * VCE = 10 V, IC = 150 mA 60 240 hFE2 VCE = 10 V, IC = 400 mA 50 VCE(sat) IC = 500 mA, IB = 50 mA an VEBO Base-emitter voltage Ma int en Emitter-base voltage (Collector open) Collector-emitter saturation voltage Transition frequency VCE = 10 V, IC = 0.5 A, f = 1 MHz fT 6 V 1.0 1.0 20 V V MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P hFE1 60 to 140 100 to 240 Publication date: April 2003 SJD00180BED 1 2SD1264, 2SD1264A PC Ta IC VCE IC VBE 1.2 (1)TC=Ta (2)With a 100×100×2mm Al heat sink (3)With a 50×50×2mm Al heat sink (4)Without heat sink (PC=2W) IB=7mA 1.0 25˚C 1.0 20 0.8 (2) 10 5mA 4mA 0.6 3mA 0.8 0.6 0 40 80 120 0 160 Ambient temperature Ta (°C) 4 8 12 16 0.1 TC=100˚C 25˚C –25˚C 10 ce /D isc on tin an Thermal resistance Rth (°C/W) en int t=0.5ms Ma t=5ms t=1ms DC 0.1 10 100 2SD1264A 2SD1264 0.01 1 1 000 0.1 1 0.4 0.6 0.8 1.0 fT I C VCE=5V f=1MHz TC=25˚C 10 1 0.1 0.01 10 0.1 1 10 Collector current IC (A) Rth t (1)Without heat sink (2)With a 100×100×2mm Al heat sink 102 (1) (2) 10 1 10−1 10−2 10−4 10−3 10−2 10−1 1 Time t (s) SJD00180BED 1.2 100 Collector current IC (A) Collector-emitter voltage VCE (V) 2 0.2 1 000 VCE=10V 103 Non repetitive pulse TC=25˚C IC 1 0 Base-emitter voltage VBE (V) 102 1 0.01 1 Safe operation area ICP 0 24 Transition frequency fT (MHz) –25˚C 0.1 Forward current transfer ratio hFE 25˚C 10 20 103 ue Collector-emitter saturation voltage VCE(sat) (V) TC=100˚C Collector current IC (A) Collector current IC (A) 0 hFE IC IC/IB=10 0.01 0.01 0.2 1mA 104 1 0.4 Collector-emitter voltage VCE (V) VCE(sat) IC 10 0.001 2mA di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0 0.4 0.2 (3) (4) –25˚C TC=100˚C 6mA Collector current IC (A) (1) 30 TC=25˚C Collector current IC (A) 40 1.2 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (W) 50 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. 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