This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1218A Silicon PNP epitaxial planar type For general amplification Complementary to 2SD1819A (0.425) Unit: mm M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0.0 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 0.9+0.2 –0.1 2 0.2±0.1 1 5° d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. • High forward current transfer ratio hFE • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9±0.1 3 ■ Features (0.65) (0.65) 1.3±0.1 ■ Absolute Maximum Ratings Ta = 25°C 2.0±0.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −45 V Collector-emitter voltage (Base open) VCEO −45 V Emitter-base voltage (Collector open) VEBO −7 V Collector current IC −100 mA Peak collector current ICP −200 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 10° 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Marking Symbol: B Symbol VCBO ue IC = −10 µA, IE = 0 −45 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −45 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 V Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 −100 µA hFE VCE = −10 V, IC = −2 mA 460 − 0.5 V nc e/ on tin Parameter Collector-base voltage (Emitter open) Di sc ■ Electrical Characteristics Ta = 25°C ± 3°C te na Forward current transfer ratio * M ain Collector-emitter saturation voltage Transition frequency VCE(sat) fT Cob Min Typ 160 IC = −100 mA, IB = −10 mA − 0.3 Max Unit V VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz VCB = −10 V, IE = 0, f = 1 MHz 2.7 pF Pl Collector output capacitance (Common base, input open circuited) Conditions Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S No-rank hFE 160 to 260 210 to 340 290 to 460 160 to 460 Marking symbol BQ BR BS B Product of no-rank is not classified and have no marking symbol for rank. Publication date: March 2003 SJC00071BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1218A PC Ta IC VCE −120 IC I B −60 Ta = 25°C −50 Collector current IC (mA) 120 −80 IB = −300 µA Collector current IC (mA) −100 160 VCE = −5 V Ta = 25°C −40 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (mW) 200 80 40 −200 µA −40 −150 µA −100 µA −20 0 40 80 120 160 −2 0 −4 −6 −8 −10 Collector current IC (mA) Base current IB (µA) −300 25°C Ta = 75°C −25°C −160 −250 −120 −200 −150 −100 −50 − 0.8 −1.2 −80 − 0.4 0 −10 −450 IC / IB = 10 −1 Ta = 75°C 25°C − 0.8 −1.2 −1.6 −2.0 − 0.001 −1 Base-emitter voltage VBE (V) −25°C −10 −100 −1 000 Collector current IC (mA) Di sc hFE IC 600 300 Ta = 75°C 25°C Cob VCB VCB = −10 V Ta = 25°C 120 100 80 60 Pl −25°C 200 100 0 −1 40 20 −10 −100 Collector current IC (mA) 2 Transition frequency fT (MHz) nc te na 500 400 140 M ain Forward current transfer ratio hFE e/ VCE = −10 V fT I E 160 Collector output capacitance C (pF) (Common base, input open circuited) ob on tin ue Base-emitter voltage VBE (V) −300 − 0.01 0 −1.6 −150 Base current IB (µA) − 0.1 −40 − 0.4 0 VCE(sat) IC VCE = −5 V −200 0 0 −12 IC VBE −240 VCE = −5 V Ta = 25°C −350 −20 Collector-emitter voltage VCE (V) IB VBE −400 −30 −10 −50 µA Collector-emitter saturation voltage VCE(sat) (V) 0 Ambient temperature Ta (°C) 0 −250 µA d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 0 −60 −1 000 0 0.1 1 10 Emitter current IE (mA) SJC00071BED 100 8 IE = 0 f = 1 MHz Ta = 25°C 7 6 5 4 3 2 1 0 −1 −10 −100 Collector-base voltage VCB (V) This product complies with the RoHS Directive (EU 2002/95/EC). 2SB1218A NF IE NF IE VCB = −5 V f = 1 kHz Rg = 2 kΩ Ta = 25°C h Parameter IE VCB = −5 V Rg = 50 kΩ Ta = 25°C hfe 16 Noise figure NF (dB) 5 4 12 3 2 f = 100 Hz hoe (µS) 10 10 kHz hie (kΩ) 0.1 1 0 0.1 10 Emitter current IE (mA) hfe 100 hoe (µS) 10 hre (× 10−4) IE = 2 mA f = 270 Hz Ta = 25°C −10 −100 hre (× 10−4) 1 10 Emitter current IE (mA) Pl M ain te na nc e/ Di sc on tin Collector-emitter voltage VCE (V) 10 1 0.1 ue 1 −1 1 Emitter current IE (mA) h Parameter VCE hie (kΩ) d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 0 0.01 h Parameter 1 kHz 8 4 1 VCE = −5 V f = 270 Hz Ta = 25°C 100 M Di ain sc te on na tin nc ue e/ d Noise figure NF (dB) 20 h Parameter 6 SJC00071BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. pla d in ea ne clu se pla m d de v ht isi ne ai ma s fo tp t f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl M ain te na nc e /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.