This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC1384 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0684 Package M Di ain sc te on na tin nc ue e/ d Features Code TO-92L-A1 Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 5 V 1 A 1.5 A 1 W 150 °C –55 to +150 °C Collector current IC Peak collector current ICP Collector power dissipation PC Junction temperature Tj Storage temperature Tstg Electrical Characteristics Ta = 25°C±3°C Parameter Pin Name 1. Emitter 2. Collector 3. Base d p l ea an incl se ed ud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. Low collector-emitter saturation voltage VCE(sat) Complementary pair with 2SA0684 Symbol Conditions Min Typ Max Unit VCBO IC = 10 mA, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V VEBO IE = 10 mA, IC = 0 5 V ICBO VCB = 20 V, IE = 0 on tin Emitter-base voltage (Collector open) ue Collector-base voltage (Emitter open) nc e Forward current transfer ratio *1 /D isc Collector-base cutoff current (Emitter open) te na Collector-emitter saturation voltage Base-emitter saturation voltage M ain Transition frequency hFE2 VCE = 10 V, IC = 500 mA 85 VCE = 5 V, IC = 1 A 50 0.1 340 mA VCE(sat) IC = 500 mA, IB = 50 mA 0.2 0.4 V VBE(sat) IC = 500 mA, IB = 50 mA 0.85 1.20 V fT VCB = 10 V, IE = –50 mA, f = 200 MHz 200 Cre VCB = 10 V, IE = 0, f = 1 MHz 11 MHz 20 pF Pl Collector output capacitance (Common base, input open circuited) hFE1 *2 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Publication date : October 2008 SJC00421AED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SC1384 PC Ta IC VCE 1.0 1.25 0.8 0.6 0.4 IC IB 1.2 Ta = 25°C IB = 10 mA 9 mA 8 mA 7 mA 1.00 6 mA 5 mA 0.75 4 mA 3 mA 0.50 VCE = 10 V Ta = 25°C 1.0 Collector current IC (A) 1.50 Collector current IC (A) 1.2 0.8 0.6 0.4 M Di ain sc te on na tin nc ue e/ d Collector power dissipation PC (W) 2SC1384_IC-IB 2SC1384_IC-VCE 2SC1384_PC-Ta 0.25 0.2 120 160 Ambient temperature Ta (°C) 2SC1383_VCE(sat)-IC 10 Ta = 75°C 25°C −25°C 0.1 0.01 0.001 0.01 0.1 1 10 80 te na 160 120 40 0 −1 −10 Emitter current IE (mA) 2 on tin nc e VCB = 10 V Ta = 25°C M ain Transition frequency fT (MHz) 200 /D isc fT IE 4 6 8 0 10 0 −100 2 4 6 8 10 Collector-emitter voltage VCE (V) Base current IB (mA) 2SC1383_VBE(sat)-IC 2SC1384_hFE-IC hFE IC 600 IC / IB = 10 12 VCE = 10 V 500 10 400 25°C 1 Ta = −25°C 300 75°C Ta = 75°C 200 25°C 0.1 −25°C 100 0.01 0.01 ue Collector current IC (A) 2SC1384_fT-IE 2 100 IC / IB = 10 1 0 VBE(sat) IC Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) VCE(sat) IC 0 FE 80 0.1 1 0 0.01 10 0.1 1 Collector current IC (A) Collector current IC (A) 2SC1384_Cob-VCB 2SC1384_VCER-RBE Cob VCB 50 IE = 0 f = 1 MHz Ta = 25°C 40 10 VCER RBE 120 CER 40 0.2 1 mA d Pl p l ea an incl se ed ud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro a n t t Collector-emitter voltage V dhu y y (V) Forward current transfer ratio b . p o pe p (Resistor between B and E) ct ed an ut life as la on tes cy cle ic. t i co nfo sta .jp rm ge /e a n/ tio . n. 0 Collector output capacitance (Common base, input open circuited) Cob (pF) 0 2 mA IC = 10 mA Ta = 25°C 100 80 30 60 20 40 10 0 20 1 10 100 Collector-base voltage VCB (V) SJC00421AED 0 0.1 1 10 100 Base-emitter resistance RBE (kΩ) ue 103 102 10 Collector current IC (A) 104 40 80 120 160 Ambient temperature Ta (°C) 0.001 0.1 Collector-emitter voltage VCE (V) d Pl p l ea an incl se ed ud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. on tin /D isc nc e 0 te na 1 M ain ICEO (Ta) ICEO (Ta = 25°C) M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). 2SC1384 2SC1384_ICEO-Ta ICEO Ta Safe operation area 2SC1384_ASO VCE = 10 V 10 Single pulse Ta = 25°C 1 I C ICP t = 10 ms 0.1 t=1s 0.01 1 SJC00421AED 10 100 3 Pl (1.27) 4 on tin /D isc nc e te na ue ±0.5 +0.3 −0.2 0.7 ±0.1 +0.2 0.45 −0.1 +0.2 0.45 −0.1 1 2 ±0.2 d p l ea an incl 0.7 ud se (3.2) e 13.5 8.6 p d e m l an a m s ht visi tp t f ed in ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. M ain M Di ain sc te on na tin nc ue e/ d This product complies with the RoHS Directive (EU 2002/95/EC). 2SC1384 TO-92L-A1 Unit: mm 5.9 ±0.2 4.9 ±0.2 (1.27) 3 2.54 ±0.15 SJC00421AED Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company. Pl M ain te na nc e /D isc on tin ue 20080805