Si7880DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.003 @ VGS = 10 V 29 0.00425 @ VGS = 4.5 V 25 D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested APPLICATIONS D DC/DC Converters – Low-Side MOSFET in Synchronous Buck in Desktops D Secondary Synchronous Rectifier PowerPAK SO-8 D S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 G D 8 D 7 D 6 D S 5 N-Channel MOSFET Bottom View Ordering Information: Si7880DP-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current (10 ms Pulse Width) Avalanche Current L = 0.1 mH TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD 14 60 IAS IS 18 25 IDM Continuous Source Current (Diode Conduction)a V 29 ID Unit A 50 4.5 1.6 5.4 1.9 3.4 1.2 TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) Steady State Steady State RthJA RthJC Typical Maximum 18 23 50 65 1.0 1.5 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71875 S-31727—Rev. C, 18-Aug-03 www.vishay.com 1 Si7880DP Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS Typ Max Unit 3.0 V VDS = 0 V, VGS = "20 V "100 nA VDS = 24 V, VGS = 0 V 1 VDS = 24 V, VGS = 0 V, TJ = 55_C 5 Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) VDS w 5 V, VGS = 10 V mA 30 A VGS = 10 V, ID = 29 A 0.0025 0.0030 VGS = 4.5 V, ID = 25 A 0.0035 0.00425 Forward Transconductancea gfs VDS = 6 V, ID = 29 A 90 Diode Forward Voltagea VSD IS = 4.5 A, VGS = 0 V 0.68 1.1 40.5 60 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time nC 18 10.5 1.2 1.8 td(on) 30 50 tr 15 25 110 200 35 60 55 80 Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 4.5 V, ID = 29 A 0.5 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 A/ms W ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 60 60 VGS = 10 thru 4 V 50 I D – Drain Current (A) I D – Drain Current (A) 50 40 30 3V 20 10 40 30 TC = 125_C 20 25_C 10 –55_C 0 0 1 2 3 4 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS – Gate-to-Source Voltage (V) Document Number: 71875 S-31727—Rev. C, 18-Aug-03 Si7880DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance On-Resistance vs. Drain Current 8000 VGS = 4.5 V 0.004 0.003 Ciss 6400 C – Capacitance (pF) r DS(on) – On-Resistance ( W ) 0.005 VGS = 10 V 0.002 0.001 4800 3200 Coss 1600 0.000 Crss 0 0 10 20 30 40 50 60 0 4 ID – Drain Current (A) 16 20 On-Resistance vs. Junction Temperature Gate Charge 1.8 VDS = 15 V ID = 29 A 8 r DS(on) – On-Resistance (W) (Normalized) V GS – Gate-to-Source Voltage (V) 12 VDS – Drain-to-Source Voltage (V) 10 6 4 2 VGS = 10 V ID = 29 A 1.6 1.4 1.2 1.0 0.8 0 0 18 36 54 72 0.6 –50 90 –25 0 Qg – Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.010 r DS(on) – On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 0.008 0.006 ID = 29 A 0.004 0.002 0.000 1 0.00 25 TJ – Junction Temperature (_C) 60 I S – Source Current (A) 8 0.2 0.4 0.6 0.8 VSD – Source-to-Drain Voltage (V) Document Number: 71875 S-31727—Rev. C, 18-Aug-03 1.0 1.2 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si7880DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 200 0.2 –0.0 Power (W) V GS(th) Variance (V) 160 ID = 250 mA –0.2 –0.4 120 80 –0.6 40 –0.8 –1.0 –50 –25 0 25 50 75 100 125 0 0.001 150 0.01 TJ – Temperature (_C) 0.1 1 10 Time (sec) Safe Operating Area 100 1 ms Limited by rDS(on) I D – Drain Current (A) 10 10 ms 100 ms 1 1s 0.1 10 s TC = 25_C Single Pulse dc 0.01 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 50_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 71875 S-31727—Rev. C, 18-Aug-03 Si7880DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10–4 Document Number: 71875 S-31727—Rev. C, 18-Aug-03 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. 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