MBR20H150CT, MBRF20H150CT, SB20H150CT-1 Datasheet

MBR20H150CT, MBRF20H150CT, SB20H150CT-1
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
Low Leakage Current 5.0 μA
FEATURES
ITO-220AB
TO-220AB
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
1
2
3
1
MBR20H150CT
2
• Solder dip 275 °C max., 10 s per JESD 22-B106
3
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MBRF20H150CT
TO-262AA
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, and
polarity protection application.
SB20H150CT-1
1
2
PIN 1
PIN 2
PIN 3
CASE
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, and TO-262AA 
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
3
PRIMARY CHARACTERISTICS
VRRM
150 V
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
IFSM
200 A
Polarity: As marked
VF
0.75 V
Mounting Torque: 10 in-lbs maximum
TJ max.
175 °C
Package
TO-220AB, ITO-220AB,
TO-262AA
Diode variations
Dual Common Cathode



IF(AV)
2 x 10 A
per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR20H150CT
MBRF20H150CT
SB20H150CT-1
UNIT
Maximum repetitive peak reverse voltage
VRRM
150
V
Working peak reverse voltage
VRWM
150
V
Maximum DC blocking voltage
VDC
150
V
Maximum average forward rectified current
per device
per diode
IF(AV)
20
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
200
A
Peak repetitive reverse current per diode 
at tp = 2 μs, 1 kHz
IRRM
1.0
A
Peak non-repetitive reverse surge energy per diode
(8/20 μs waveform)
ERSM
10
mJ
Non-repetitive avalanche energy per diode at 25 °C,
IAS = 1.5 A, L = 10 mH
EAS
11.25
mJ
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to
heatsink t = 1 min
Revision: 13-Aug-13
dV/dt
10 000
V/μs
TJ, TSTG
- 65 to + 175
°C
VAC
1500
V
Document Number: 88864
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR20H150CT, MBRF20H150CT, SB20H150CT-1
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage
per diode
SYMBOL
IF = 10 A
TC = 25 °C
IF = 10 A
TC = 125 °C
IF = 20 A
TC = 25 °C
IF = 20 A
VALUE
0.75
VF (1)
V
0.99
TC = 125 °C
Maximum reverse current per diode 
at working peak reverse voltage
UNIT
0.90
0.86
TJ = 25 °C
IR (1)
TJ = 125 °C
5.0
μA
1.0
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
MBR
MBRF
MBRB
UNIT
RJC
2.2
4.2
2.2
°C/W
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
TO-220AB
MBR20H150CT-E3/45
PREFERRED P/N
2.06
45
50/tube
DELIVERY MODE
Tube
ITO-220AB
MBRF20H150CT-E3/45
2.20
45
50/tube
Tube
TO-262AA
SB20H150CT-1E3/45
1.58
45
50/tube
Tube
Note
AEC-Q101 qualified
(1)

RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
30
260
Peak Forward Surge Current (A)
Average Forward Current (A)
240
25
MBR, MBRB
20
MBRF
15
10
5
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
220
200
180
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Derating Curve (Total)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Revision: 13-Aug-13
Document Number: 88864
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR20H150CT, MBRF20H150CT, SB20H150CT-1
www.vishay.com
Vishay General Semiconductor
10 000
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TJ = 175 °C
10
TJ = 125 °C
TJ = 75 °C
1
TJ = 25 °C
1000
100
10
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
1000
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
10 000
TJ = 175 °C
100
TJ = 125 °C
10
1
TJ = 75 °C
0.1
TJ = 25 °C
0.01
10
20
30
40
50
60
70
80
90
100
10
MBRF
MBR, MBRB
1
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 13-Aug-13
Document Number: 88864
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR20H150CT, MBRF20H150CT, SB20H150CT-1
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.055 (1.40)
0.047 (1.20)
0.398 (10.10)
0.382 (9.70)
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.150 (3.80)
0.139 (3.54)
DIA.
0.114 (2.90)
0.106 (2.70)
0.343 (8.70)
TYP.
0.154 (3.90)
0.138 (3.50)
0.067 (1.70)
TYP.
0.331(8.40)
TYP.
1
0.634 (16.10)
0.618 (15.70)
PIN
2 3
0.118 (3.00)
TYP.
0.638 (16.20)
0.598 (15.20)
0.370 (9.40)
0.354 (9.00)
1.161 (29.48)
1.106 (28.08)
0.523 (13.28)
0.507 (12.88)
0.102 (2.60)
0.087 (2.20)
0.035 (0.90)
0.028 (0.70)
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) TYP.
0.100 (2.54)
TYP.
0.024 (0.60)
0.018 (0.45)
ITO-220AB
0.408 (10.36)
0.392 (9.96)
1.29 (3.28)
DIA.
1.21 (3.08)
0.138 (3.50)
0.122 (3.10)
0.630 (16.00)
0.614 (15.60)
PIN
1 2 3
0.193 (4.90)
0.177 (4.50)
0.108 (2.74)
0.092 (2.34)
0.264 (6.70)
0.248 (6.50)
0.270 (6.88)
0.255 (6.48)
0.320 (8.12)
0.304 (7.72)
0.633 (16.07)
0.601 (15.67)
0.117 (2.96)
0.101 (2.56)
0.396 (10.05)
0.372 (9.45)
0.039 (1.00)
0.024 (0.60)
0.100
(2.54) TYP.
Revision: 13-Aug-13
0.058 (1.47)
MAX.
0.200 (5.08)
TYP.
0.024 (0.60)
0.018 (0.45)
Document Number: 88864
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR20H150CT, MBRF20H150CT, SB20H150CT-1
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.398 (10.10)
0.382 (9.70)
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.039 (1.00)
0.055 (1.40)
0.049 (1.25)
K
0.370 (9.40)
0.354 (9.00)
1
PIN
2 3
0.425 (10.80)
0.393 (10.00)
0.488 (12.4)
0.472 (12.00)
0.102 (2.60)
0.087 (2.20)
0.523 (13.28)
0.507 (12.88)
0.035 (0.90)
0.028 (0.70)
0.100
(2.54) TYP.
Revision: 13-Aug-13
0.405 (10.28)
0.389 (9.88)
0.062 (1.57)
0.054 (1.37)
0.024 (0.60)
0.018 (0.45)
0.200 (5.08) TYP.
Document Number: 88864
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000