SUR50N03-09P Vishay Siliconix New Product N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D 100% Rg Tested APPLICATIONS D DC/DC Converters − Desktop CPU Core D Synchronous Rectifiers D TO-252 Reverse Lead DPAK Drain Connected to Tab G D G S Top View Ordering Information: SUR50N03-09P—E3 SUR50N03-09P-T4—E3 (altrenate tape orientation) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 ID 63b TA = 25_C TC = 25_C Continuous Drain Current 44.5b IDM 50 Continuous Source Current (Diode Conduction)a IS 10 Single Pulse Avalanche Current IAS 35 L = 0.1 0 1 mH Single Pulse Avalanche Energy TC = 25_C Maximum Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range V 21 TC = 100_C Pulsed Drain Current Unit EAS A 61 mJ 65.2 PD W 7.5a TJ, Tstg −55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Symbol t v 10 sec Steady State Maximum Junction-to-Case RthJA RthJC Typical Maximum 16 20 40 50 1.8 2.3 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Based on maximum allowable junction temperature, package limitation current is 25 A. Document Number: 72181 S-32694—Rev. A, 19-Jan-04 www.vishay.com 1 SUR50N03-09P Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 0.0095 0.015 VGS = 4.5 V, ID = 20 A Forward Transconductanceb gfs mA A 0.0076 VGS = 10 V, ID = 20 A, TJ = 125_C rDS(on) nA 50 VGS = 10 V, ID = 20 A Drain-Source Drain Source On On-State State Resistanceb V 3.0 0.0115 VDS = 15 V, ID = 20 A W 0.014 20 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) Rise Timec 2200 VGS = 0 V, VDS = 25 V, f = 1 MHz 1 1.5 4.4 11 16 W 7.5 VDS = 15 V, VGS = 4.5 V, ID = 50 A nC 5.0 VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W td(off) Fall Timec pF p 180 tr Turn-Off Delay Timec 410 tf 9 15 80 120 22 35 8 12 ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM Diode Forward Voltageb VSD IF = 50 A, VGS = 0 V 1.2 1.5 V trr IF = 50 A, di/dt = 100 A/ms 35 70 ns Source-Drain Reverse Recovery Time 100 A Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 120 Transfer Characteristics 120 VGS = 10 thru 6 V 5V 90 I D − Drain Current (A) I D − Drain Current (A) 90 4V 60 30 60 TC = 125_C 30 3V 25_C 2V 0 0 2 4 6 0 8 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 −55_C 10 0 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Document Number: 72181 S-32694—Rev. A, 19-Jan-04 SUR50N03-09P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance On-Resistance vs. Drain Current 0.05 80 r DS(on)− On-Resistance ( W ) g fs − Transconductance (S) 100 TC = −55_C 25_C 60 125_C 40 20 0 0.04 0.03 0.02 VGS = 4.5 V VGS = 10 V 0.01 0.00 0 10 20 30 40 50 0 20 40 ID − Drain Current (A) Ciss V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) 2000 1500 1000 Coss Crss 0 24 30 VDS = 15 V ID = 30 A 8 6 4 2 0 0 5 10 15 20 25 30 0 6 VDS − Drain-to-Source Voltage (V) 1.6 On-Resistance vs. Junction Temperature 18 Source-Drain Diode Forward Voltage 100 VGS = 10 V ID = 30 A 1.2 0.8 0.4 0.0 −50 12 Qg − Total Gate Charge (nC) I S − Source Current (A) 2.0 r DS(on)− On-Resistance ( W ) (Normalized) 100 Gate Charge 10 2500 500 80 ID − Drain Current (A) Capacitance 3000 60 −25 0 25 50 75 100 125 TJ − Junction Temperature (_C) Document Number: 72181 S-32694—Rev. A, 19-Jan-04 150 175 TJ = 150_C TJ = 25_C 10 1 0 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) www.vishay.com 3 SUR50N03-09P Vishay Siliconix New Product THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Safe Operating Area 1000 25 Limited by rDS(on) 10, 100 ms 100 I D − Drain Current (A) I D − Drain Current (A) 20 15 10 5 10 1 ms 10 ms 100 ms 1 1s 10 s TA = 25_C Single Pulse 0.1 0 0 25 50 75 100 125 150 100 s dc 0.01 175 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) TA − Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72181 S-32694—Rev. A, 19-Jan-04 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1