SUR50N03-06P Vishay Siliconix New Product N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0065 @ VGS = 10 V 84b 0.0095 @ VGS = 4.5 V 59b VDS (V) 30 D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation D 100% Rg Tested APPLICATIONS D DC/DC Converters − Desktop CPU Core D Synchronous Rectifiers D TO-252 Reverse Lead DPAK Drain Connected to Tab G D G S Top View Ordering Information: SUR50N03-06P—E3 SUR50N03-06P-T4—E3 (altrenate tape orientation) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 TA = 25_C TC = 25_C Continuous Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range V 27 84b ID 59b TC = 100_C Pulsed Drain Current Unit IDM 100 IS 25 A 88 PD W 8.3a TJ, Tstg −55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Symbol t v 10 sec Steady State Maximum Junction-to-Case RthJA RthJC Typical Maximum 15 18 40 50 1.4 1.7 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Based on maximum allowable junction temperature, package limitation current is 50 A. Document Number: 72182 S-32693—Rev. A, 19-Jan-04 www.vishay.com 1 SUR50N03-06P Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 3.0 A 0.0053 VGS = 10 V, ID = 20 A, TJ = 125_C rDS(on) gfs 0.0065 0.0105 VGS = 4.5 V, ID = 20 A Forward Transconductanceb 0.0078 VDS = 15 V, ID = 20 A nA mA 50 VGS = 10 V, ID = 20 A Drain-Source Drain Source On On-State State Resistanceb V W 0.0095 20 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) Rise Timec 3100 VGS = 0 V, VDS = 25 V, f = 1 MHz 1 1.9 3.1 21 30 10 VDS = 15 V, VGS = 4.5 V, ID = 50 A W nC 7.5 VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W td(off) Fall Timec pF p 255 tr Turn-Off Delay Timec 565 tf 12 20 12 20 30 45 10 15 ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM Diode Forward Voltageb VSD IF = 100 A, VGS = 0 V 1.2 1.5 V trr IF = 50 A, di/dt = 100 A/ms 35 70 ns Source-Drain Reverse Recovery Time 100 A Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 200 100 VGS = 10 thru 6 V 5V 80 I D − Drain Current (A) I D − Drain Current (A) 160 120 80 4V 40 60 40 TC = 125_C 20 25_C −55_C 3V 0 0 0 2 4 6 8 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 10 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) Document Number: 72182 S-32693—Rev. A, 19-Jan-04 SUR50N03-06P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance On-Resistance vs. Drain Current 120 0.0150 g fs − Transconductance (S) r DS(on)− On-Resistance ( W ) TC = −55_C 100 25_C 80 125_C 60 40 20 0 0.0125 0.0100 VGS = 4.5 V 0.0075 VGS = 10 V 0.0050 0.0025 0.0000 0 10 20 30 40 50 0 20 40 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) 3000 2500 2000 1500 Coss 1000 Crss 500 100 40 50 Gate Charge 10 Ciss 3500 80 ID − Drain Current (A) Capacitance 4000 60 0 VDS = 15 V ID = 50 A 8 6 4 2 0 0 5 10 15 20 25 30 0 10 VDS − Drain-to-Source Voltage (V) 2.0 20 30 Qg − Total Gate Charge (nC) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 1.5 I S − Source Current (A) r DS(on)− On-Resistance ( W ) (Normalized) VGS = 10 V ID = 20 A 1.0 0.5 0.0 −50 −25 0 25 50 75 100 125 TJ − Junction Temperature (_C) Document Number: 72182 S-32693—Rev. A, 19-Jan-04 150 175 TJ = 150_C TJ = 25_C 10 1 0 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) www.vishay.com 3 SUR50N03-06P Vishay Siliconix New Product THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Limited by rDS(on) 24 10, 100 ms 100 I D − Drain Current (A) I D − Drain Current (A) Safe Operating Area 1000 30 18 12 6 10 1 ms 10 ms 100 ms 1 1s 10 s TA = 25_C Single Pulse 0.1 0 0 25 50 75 100 125 150 100 s dc 0.01 175 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) TA − Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72182 S-32693—Rev. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1