SUR70N02-04P Vishay Siliconix New Product N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0037 @ VGS = 10 V 37 0.0061 @ VGS = 4.5 V 29 APPLICATIONS VDS (V) 20 D TO-252 Reverse Lead DPAK Drain Connected to Tab G D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested D D D D D Synchronous Buck Converter − Low Side D Synchronous Rectifier − Secondary Rectifier G S Top View Ordering Information: SUR70N02-04P—E3 SUR70N02-04P-T4—E3 (altrenate tape orientation) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS "20 TA = 25_C Continuous Drain Currenta TC= 25_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current L = 0.1 0 1 mH Single Pulse Avalanche Energy TA = 25_C Maximum Power Dissipation TC = 25_C Operating Junction and Storage Temperature Range Unit V 37a ID 70b IDM 100 IS 37 IAS 30 EAS A 45 mJ 8.3a PD W 93 TJ, Tstg −55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Symbol t v 10 sec Steady State RthJA RthJC Typical Maximum 15 18 40 50 1.3 1.6 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package Document Number: 72776 S-32697—Rev. A, 19-Jan-04 www.vishay.com 1 SUR70N02-04P Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 20 VGS(th) VDS = VGS, ID = 250 mA 0.8 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 20 V, VGS = 0 V 1 VDS = 20 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V gfs 0.0037 0.0052 VGS = 4.5 V, ID = 20 A Forward Transconductanceb mA A 0.0028 VGS = 10 V, ID = 20 A, TJ = 125_C rDS(on) nA 50 VGS = 10 V, ID = 20 A Drain-Source Drain Source On On-State State Resistanceb V 3.0 0.0047 VDS = 15 V, ID = 20 A W 0.0061 15 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) Rise Timec 4500 VGS = 0 V, VDS = 10 V, f = 1 MHz 0.5 1.1 1.8 34 153 W 11 VDS = 10 V, VGS = 4.5 V, ID = 50 A nC 10 VDD = 10 V, RL = 0.2 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W td(off) Fall Timec pF p 800 tr Turn-Off Delay Timec 1520 tf 15 25 11 20 35 55 15 25 ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM Diode Forward Voltageb VSD IF = 50 A, VGS = 0 V 1.2 1.5 V trr IF = 50 A, di/dt = 100 A/ms 45 90 ns Source-Drain Reverse Recovery Time 100 A Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 140 160 140 120 I D − Drain Current (A) 120 I D − Drain Current (A) VGS = 10 thru 4 V 100 80 3V 60 40 80 60 TC = 125_C 40 25_C 20 20 2V −55_C 0 0 2 4 6 8 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 100 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS − Gate-to-Source Voltage (V) Document Number: 72776 S-32697—Rev. A, 19-Jan-04 SUR70N02-04P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance On-Resistance vs. Drain Current 120 0.007 100 25_C 80 125_C 0.006 r DS(on)− On-Resistance ( W ) g fs − Transconductance (S) TC = −55_C 60 40 20 0.005 VGS = 4.5 V 0.004 VGS = 10 V 0.003 0.002 0.001 0 0.000 0 10 20 30 40 50 0 20 40 ID − Drain Current (A) Ciss 4000 3000 Coss 2000 Crss 1000 0 60 75 VDS = 10 V ID = 50 A 8 6 4 2 0 0 4 8 12 16 20 0 15 VDS − Drain-to-Source Voltage (V) 1.4 On-Resistance vs. Junction Temperature 45 Source-Drain Diode Forward Voltage 100 VGS = 10 V ID = 30 A 1.2 1.0 0.8 0.6 −50 30 Qg − Total Gate Charge (nC) I S − Source Current (A) 1.6 r DS(on)− On-Resistance ( W ) (Normalized) 100 Gate Charge 10 V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) 5000 80 ID − Drain Current (A) Capacitance 6000 60 −25 0 25 50 75 100 125 TJ − Junction Temperature (_C) Document Number: 72776 S-32697—Rev. A, 19-Jan-04 150 175 TJ = 150_C TJ = 25_C 10 1 0 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) www.vishay.com 3 SUR70N02-04P Vishay Siliconix New Product THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Limited by rDS(on) 32 10, 100 ms 100 I D − Drain Current (A) I D − Drain Current (A) Safe Operating Area 1000 40 24 16 8 1 ms 10 10 ms TA = 25_C Single Pulse 0.1 0 0 25 50 75 100 125 150 100 ms 1s 10 s 100 s dc 1 0.01 175 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) TA − Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72776 S-32697—Rev. 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Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1