SUR50N03-06P Vishay Siliconix New Product N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0065 @ VGS = 10 V 84b 0.0095 @ VGS = 4.5 V 59b VDS (V) 30 D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation D 100% Rg Tested APPLICATIONS D DC/DC Converters − Desktop CPU Core D Synchronous Rectifiers D TO-252 Reverse Lead DPAK Drain Connected to Tab G D G S Top View Ordering Information: SUR50N03-06P—E3 SUR50N03-06P-T4—E3 (altrenate tape orientation) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS "20 TA = 25_C TC = 25_C Continuous Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation TA = 25_C Operating Junction and Storage Temperature Range V 27 84b ID 59b TC = 100_C Pulsed Drain Current Unit IDM 100 IS 25 A 88 PD W 8.3a TJ, Tstg −55 to 175 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Symbol t v 10 sec Steady State Maximum Junction-to-Case RthJA RthJC Typical Maximum 15 18 40 50 1.4 1.7 Unit _C/W C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Based on maximum allowable junction temperature, package limitation current is 50 A. Document Number: 72182 S-32693—Rev. A, 19-Jan-04 www.vishay.com 1 SUR50N03-06P Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 125_C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 3.0 A 0.0053 VGS = 10 V, ID = 20 A, TJ = 125_C rDS(on) gfs 0.0065 0.0105 VGS = 4.5 V, ID = 20 A Forward Transconductanceb 0.0078 VDS = 15 V, ID = 20 A nA mA 50 VGS = 10 V, ID = 20 A Drain-Source Drain Source On On-State State Resistanceb V W 0.0095 20 S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) Rise Timec 3100 VGS = 0 V, VDS = 25 V, f = 1 MHz 1 1.9 3.1 21 30 10 VDS = 15 V, VGS = 4.5 V, ID = 50 A W nC 7.5 VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W td(off) Fall Timec pF p 255 tr Turn-Off Delay Timec 565 tf 12 20 12 20 30 45 10 15 ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM Diode Forward Voltageb VSD IF = 100 A, VGS = 0 V 1.2 1.5 V trr IF = 50 A, di/dt = 100 A/ms 35 70 ns Source-Drain Reverse Recovery Time 100 A Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 200 100 VGS = 10 thru 6 V 5V 80 I D − Drain Current (A) I D − Drain Current (A) 160 120 80 4V 40 60 40 TC = 125_C 20 25_C −55_C 3V 0 0 0 2 4 6 8 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 10 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) Document Number: 72182 S-32693—Rev. A, 19-Jan-04 SUR50N03-06P Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance On-Resistance vs. Drain Current 120 0.0150 g fs − Transconductance (S) r DS(on)− On-Resistance ( W ) TC = −55_C 100 25_C 80 125_C 60 40 20 0 0.0125 0.0100 VGS = 4.5 V 0.0075 VGS = 10 V 0.0050 0.0025 0.0000 0 10 20 30 40 50 0 20 40 ID − Drain Current (A) V GS − Gate-to-Source Voltage (V) C − Capacitance (pF) 3000 2500 2000 1500 Coss 1000 Crss 500 100 40 50 Gate Charge 10 Ciss 3500 80 ID − Drain Current (A) Capacitance 4000 60 0 VDS = 15 V ID = 50 A 8 6 4 2 0 0 5 10 15 20 25 30 0 10 VDS − Drain-to-Source Voltage (V) 2.0 20 30 Qg − Total Gate Charge (nC) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 100 1.5 I S − Source Current (A) r DS(on)− On-Resistance ( W ) (Normalized) VGS = 10 V ID = 20 A 1.0 0.5 0.0 −50 −25 0 25 50 75 100 125 TJ − Junction Temperature (_C) Document Number: 72182 S-32693—Rev. A, 19-Jan-04 150 175 TJ = 150_C TJ = 25_C 10 1 0 0.3 0.6 0.9 1.2 1.5 VSD − Source-to-Drain Voltage (V) www.vishay.com 3 SUR50N03-06P Vishay Siliconix New Product THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature Limited by rDS(on) 24 10, 100 ms 100 I D − Drain Current (A) I D − Drain Current (A) Safe Operating Area 1000 30 18 12 6 10 1 ms 10 ms 100 ms 1 1s 10 s TA = 25_C Single Pulse 0.1 0 0 25 50 75 100 125 150 100 s dc 0.01 175 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) TA − Ambient Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 100 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72182 S-32693—Rev. A, 19-Jan-04