VISHAY SUR70N02-04P

SUR70N02-04P
Vishay Siliconix
New Product
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES
PRODUCT SUMMARY
rDS(on) (W)
ID (A)a
0.0037 @ VGS = 10 V
37
0.0061 @ VGS = 4.5 V
29
APPLICATIONS
VDS (V)
20
D
TO-252
Reverse Lead DPAK
Drain Connected to Tab
G
D
TrenchFETr Power MOSFET
175_C Junction Temperature
PWM Optimized for High Efficiency
100% Rg Tested
D
D
D
D
D Synchronous Buck Converter
− Low Side
D Synchronous Rectifier
− Secondary Rectifier
G
S
Top View
Ordering Information:
SUR70N02-04P—E3
SUR70N02-04P-T4—E3 (altrenate tape orientation)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
"20
TA = 25_C
Continuous Drain Currenta
TC= 25_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Single Pulse Avalanche Current
L = 0.1
0 1 mH
Single Pulse Avalanche Energy
TA = 25_C
Maximum Power Dissipation
TC = 25_C
Operating Junction and Storage Temperature Range
Unit
V
37a
ID
70b
IDM
100
IS
37
IAS
30
EAS
A
45
mJ
8.3a
PD
W
93
TJ, Tstg
−55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction
Junction-to-Ambient
to Ambienta
Maximum Junction-to-Case
Symbol
t v 10 sec
Steady State
RthJA
RthJC
Typical
Maximum
15
18
40
50
1.3
1.6
Unit
_C/W
C/W
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package
Document Number: 72776
S-32697—Rev. A, 19-Jan-04
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SUR70N02-04P
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Typa
Symbol
Test Condition
Min
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
20
VGS(th)
VDS = VGS, ID = 250 mA
0.8
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 125_C
50
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
gfs
0.0037
0.0052
VGS = 4.5 V, ID = 20 A
Forward Transconductanceb
mA
A
0.0028
VGS = 10 V, ID = 20 A, TJ = 125_C
rDS(on)
nA
50
VGS = 10 V, ID = 20 A
Drain-Source
Drain
Source On
On-State
State Resistanceb
V
3.0
0.0047
VDS = 15 V, ID = 20 A
W
0.0061
15
S
Dynamica
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
Rise Timec
4500
VGS = 0 V, VDS = 10 V, f = 1 MHz
0.5
1.1
1.8
34
153
W
11
VDS = 10 V, VGS = 4.5 V, ID = 50 A
nC
10
VDD = 10 V, RL = 0.2 W
ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W
td(off)
Fall Timec
pF
p
800
tr
Turn-Off Delay Timec
1520
tf
15
25
11
20
35
55
15
25
ns
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
ISM
Diode Forward Voltageb
VSD
IF = 50 A, VGS = 0 V
1.2
1.5
V
trr
IF = 50 A, di/dt = 100 A/ms
45
90
ns
Source-Drain Reverse Recovery Time
100
A
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
140
160
140
120
I D − Drain Current (A)
120
I D − Drain Current (A)
VGS = 10 thru 4 V
100
80
3V
60
40
80
60
TC = 125_C
40
25_C
20
20
2V
−55_C
0
0
2
4
6
8
VDS − Drain-to-Source Voltage (V)
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100
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS − Gate-to-Source Voltage (V)
Document Number: 72776
S-32697—Rev. A, 19-Jan-04
SUR70N02-04P
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
On-Resistance vs. Drain Current
120
0.007
100
25_C
80
125_C
0.006
r DS(on)− On-Resistance ( W )
g fs − Transconductance (S)
TC = −55_C
60
40
20
0.005
VGS = 4.5 V
0.004
VGS = 10 V
0.003
0.002
0.001
0
0.000
0
10
20
30
40
50
0
20
40
ID − Drain Current (A)
Ciss
4000
3000
Coss
2000
Crss
1000
0
60
75
VDS = 10 V
ID = 50 A
8
6
4
2
0
0
4
8
12
16
20
0
15
VDS − Drain-to-Source Voltage (V)
1.4
On-Resistance vs. Junction Temperature
45
Source-Drain Diode Forward Voltage
100
VGS = 10 V
ID = 30 A
1.2
1.0
0.8
0.6
−50
30
Qg − Total Gate Charge (nC)
I S − Source Current (A)
1.6
r DS(on)− On-Resistance ( W )
(Normalized)
100
Gate Charge
10
V GS − Gate-to-Source Voltage (V)
C − Capacitance (pF)
5000
80
ID − Drain Current (A)
Capacitance
6000
60
−25
0
25
50
75
100
125
TJ − Junction Temperature (_C)
Document Number: 72776
S-32697—Rev. A, 19-Jan-04
150
175
TJ = 150_C
TJ = 25_C
10
1
0
0.3
0.6
0.9
1.2
1.5
VSD − Source-to-Drain Voltage (V)
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SUR70N02-04P
Vishay Siliconix
New Product
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Limited
by rDS(on)
32
10, 100 ms
100
I D − Drain Current (A)
I D − Drain Current (A)
Safe Operating Area
1000
40
24
16
8
1 ms
10
10 ms
TA = 25_C
Single Pulse
0.1
0
0
25
50
75
100
125
150
100 ms
1s
10 s
100 s
dc
1
0.01
175
0.1
1
10
100
VDS − Drain-to-Source Voltage (V)
TA − Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10−4
10−3
10−2
10−1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10−4
10−3
10−2
10−1
1
10
100
Square Wave Pulse Duration (sec)
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Document Number: 72776
S-32697—Rev. A, 19-Jan-04