Si7302DN Vishay Siliconix N-Channel 220-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.320 at VGS = 10 V 8.4 0.340 at VGS = 6 V 8.2 VDS (V) 220 Qg (Typ.) 9.1 nC APPLICATIONS PowerPAK 1212-8 • Primary Side Switching S 3.30 mm • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % Rg Tested D 3.30 mm 1 S 2 S 3 G 4 D 8 G D 7 D 6 D 5 Bottom View S Ordering Information: Si7302DN-T1-E3 (Lead (Pb)-free) Si7302DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Maximum Power Dissipation IS PD TJ, Tstg Operating Junction and Storage Temperature Range d, e Unit V 2.3b, c 1.8b, c 10 8.4 IDM Pulsed Drain Current Soldering Recommendations (Peak Temperature) Limit 220 ± 20 8.4 6.7 A 3.2b, c 52 33 3.8b, c 2.0b, c - 55 to 150 260 W °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb, f Maximum Maximum Junction-to-Case (Drain) Steady State Symbol RthJA RthJC Typical 26 1.9 Maximum 33 2.4 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 81 °C/W. Document Number: 73306 S-83051-Rev. D, 29-Dec-08 www.vishay.com 1 Si7302DN Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 220 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = 20 VGS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C 7.7 2 4 V 100 nA VDS = 220 V, VGS = 0 V 1 VDS = 220 V, VGS = 0 V, TJ = 55 °C 10 VDS ≥ 5 V, VGS = 10 V RDS(on) V 240 10 µA A VGS = 10 V, ID = 2.3 A 0.260 0.320 VGS = 6 V, ID = 2.2 A 0.280 0.340 VDS = 15 V, ID = 2.3 A 11 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 645 VDS = 15 V, VGS = 0 V, f = 1 MHz 72 VDS = 110 V, VGS = 10 V, ID = 2.3 A 14 21 9.1 14 pF 47 VDS = 110 V, VGS = 6 V, ID = 2.3 A 2.8 nC 4.2 VGS = 0.1 mV, f = 1 MHz td(on) VDD = 110 V, RL = 110 Ω ID ≅ 1 A, VGEN = 4.5 V, Rg = 6 Ω tr td(off) tf 0.9 1.8 2.7 10 15 10 15 20 30 15 25 Ω ns Drain-Source Body Diode Characteristics TC = 25 °C, unless otherwise noted IS 8.4 Pulse Diode Forward Current ISM 10 Body Diode Voltage VSD Continuous Source-Drain Diode Current Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IS = 3.2 A, VGS = 0 V IF = 3.2 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 65 100 ns 163 250 nC 45 20 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73306 S-83051-Rev. D, 29-Dec-08 Si7302DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10.0 10 VGS = 10 thru 5 V 8.0 I D - Drain Current (A) I D - Drain Current (A) 8 6 4 6.0 TC = 125 °C 4.0 25 °C 2.0 2 4V 0 0.0 0.5 1.0 1.5 - 55 °C 2.0 2.5 3.0 3.5 0.0 2.0 4.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5.0 900 750 0.33 C - Capacitance (pF) RDS(on) - On-Resistance (mΩ) 3.0 VDS - Drain-to-Source Voltage (V) 0.35 0.31 0.29 VGS = 6 V Ciss 600 450 300 VGS = 10 V 0.27 150 0.25 Coss Crss 0 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 70 80 125 150 2.5 10 ID = 2.3 A VGS = 10 and 6 V ID = 2.3 A 8 VDS = 110 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 2.5 6 VDS = 154 V 4 2.0 1.5 1.0 2 0 0 3 6 9 Qg - Total Gate Charge (nC) Gate Charge Document Number: 73306 S-83051-Rev. D, 29-Dec-08 12 15 0.5 - 50 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si7302DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 RDS(on) - Drain-to-Source On-Resistance (mΩ) 20 TJ = 150 °C I S - Source Current (A) 10 TJ = 25 °C TA = 125 °C 0.5 0.4 TA = 25 °C 0.3 0.2 1 0.00 ID = 2.3 A 0.2 0.4 0.6 0.8 1.0 0 1.2 2 VSD - Source-to-Drain Voltage (V) 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3.6 100 80 ID = 250 µA Power (W) VGS(th) (V) 3.2 2.8 60 40 2.4 20 2.0 - 50 - 25 0 25 50 75 100 125 0 0.01 150 1 0.1 TJ - Temperature (°C) 100 600 Single Pulse Power Threshold Voltage IDM Limited 10 P(t) = 0.0001 Limited by RDS(on)* 1 I D - Drain Current (A) 10 Time (s) P(t) = 0.001 P(t) = 0.01 0.1 P(t) = 0.1 P(t) = 1 P(t) = 10 0.01 TA = 25 °C Single Pulse BVDSS Limited 0.001 0.1 DC 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which R DS(on) is specified Safe Operating Area www.vishay.com 4 Document Number: 73306 S-83051-Rev. D, 29-Dec-08 Si7302DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 60 Power Dissipation (W) 8 ID - Drain Current (A) VGS = 4.5 V ID = 2.3 A 50 6 Package Limited 4 2 40 30 20 10 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73306 S-83051-Rev. D, 29-Dec-08 www.vishay.com 5 Si7302DN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10- 3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73306. www.vishay.com 6 Document Number: 73306 S-83051-Rev. D, 29-Dec-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000