Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com Report Title: Qualification Test Report Report Type: See Attached Date: See Attached QTR: 2013- 00253 Wafer Process: GaAs HBT-C HMC475 HMC580 HMC589 HMC894 HMC899 HMC935 Rev: 01 QTR: 2013- 00253 Wafer Process: GaAs HBT-C Rev: 01 Introduction The testing performed for this report is designed to accelerate the predominant failure mode, electro-migration (EM), for the devices under test. The devices are stressed at high temperature and DC biased to simulate a lifetime of use at typical operating temperatures. Using the Arrhenius equation, the acceleration factor (AF) is calculated for the stress testing based on the stress temperature and the typical use operating temperature. This report is intended to summarize all of the High Temperature Operating Life Test (HTOL) data for the GaAs HBT-C process. The FIT/MTTF data contained in this report includes all the stress testing performed on this process to date and will be updated periodically as additional data becomes available. Data sheets for the tested devices can be found at www.hittite.com. Glossary of Terms & Definitions: 1. HTOL: High Temperature Operating Life. This test is used to determine the effects of bias conditions and temperature on semiconductor devices over time. It simulates the devices’ operating condition in an accelerated way, through high temperature and/or bias voltage, and is primarily for device qualification and reliability monitoring. This test was performed in accordance with JEDEC JESD22-A108. 2. Operating Junction Temp (T oj ): Temperature of the die active circuitry during typical operation. 3. Stress Junction Temp (T sj ): Temperature of the die active circuitry during stress testing. QTR: 2013- 00253 Wafer Process: GaAs HBT-C Rev: 01 Qualification Sample Selection: All qualification devices used were manufactured and tested on standard production processes and met pre-stress acceptance test requirements. Summary of Qualification Tests: HMC890 (QTR2013-00020) TEST QTY IN QTY OUT PASS/FAIL Initial Electrical 81 81 Complete HTOL, 1000 hours 81 81 Complete Post HTOL Electrical Test 81 81 Pass Bond Pull 10 10 Pass Die Shear 10 10 Pass SEM Inspection 5 5 Pass Metal and Dielectric Thickness 5 5 Pass NOTES QTR: 2013- 00253 Wafer Process: GaAs HBT-C Rev: 01 GaAs HBT-C Failure Rate Estimate Based on the HTOL test results, a failure rate estimation was determined using the following parameters: With device ambient case temp, Tc = 60°C HMC890 (QTR2013-00020) Operating Junction Temp (T oj ) =95°C(368 °K) Stress Junction Temp (T sj ) = 150 °C(423 °K) Device hours: HMC890 (QTR2013-00020) = (81 X 1000hrs) = 81,000 hours For GaAs HBT-C MMIC, Activation Energy = 1.36 eV Acceleration Factor (AF): HMC890 (QTR2013-00020) Acceleration Factor = exp[1.36/8.6 e-5(1/368-1/423)] = 267.1 Equivalent hours = Device hours x Acceleration Factor Equivalent hours = (81,000x267.1) = 2.16x107 hours QTR: 2013- 00253 Wafer Process: GaAs HBT-C Rev: 01 Since there were no failures and we used a time terminated test, F=0, and R = 2F+2 = 2 The failure rate was calculated using Chi Square Statistic: at 60% and 90% Confidence Level (CL), with 0 units out of spec and a 60°C package backside temp; Failure Rate λ 60 = [(χ2) 60 , 2 ]/(2X 2.16x107 )] = 1.8/ 4.32x107 = 4.23x10-8 failures/hour or 42 FIT or MTTF = 2.36x107 Hours λ 90 = [(χ2) 90 , 2 ]/(2X 2.16x107 )] = 4.6/ 4.32x107 = 1.07x10-7 failures/hour or 107 FIT or MTTF = 9.38x106 Hours