Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com Report Title: Qualification Test Report Report Type: See Attached Date: See Attached QTR: 2013- 00266 Wafer Process: PHEMT-L HMC1040 HMC1049 HMC1065 Rev: 02 QTR: 2013- 00266 Wafer Process: PHEMT-L Rev: 02 Introduction The testing performed for this report is designed to accelerate the predominant failure mode, electro-migration (EM), for the devices under test. The devices are stressed at high temperature and DC biased to simulate a lifetime of use at typical operating temperatures. Using the Arrhenius equation, the acceleration factor (AF) is calculated for the stress testing based on the stress temperature and the typical use operating temperature. This report is intended to summarize all of the High Temperature Operating Life Test (HTOL) data for the PHEMT-L process. The FIT/MTTF data contained in this report includes all the stress testing performed on this process to date and will be updated periodically as additional data becomes available. Data sheets for the tested devices can be found at www.hittite.com. Glossary of Terms & Definitions: 1. CDM: Charged Device Model. A specified ESD testing circuit characterizing an event that occurs when a device acquires charge through some triboelectric (frictional) or electrostatic induction processes and then abruptly touches a grounded object or surface. This test was performed in accordance with JEDEC 22-C101. 2. ESD: Electro-Static Discharge. A sudden transfer of electrostatic charge between bodies or surfaces at different electrostatic potentials. 3. HAST: Highly Accelerated Stress Test (biased). Devices are subjected to 96 hours of 85% relative humidity at a temperature of 130°C and pressure (15 PSIG), while DC biased. This test is performed in accordance with JESD22-A110. 4. HBM: Human Body Model. A specified ESD testing circuit characterizing an event that occurs when a device is subjected to an electro-static charge stored in the human body and discharged through handling of the electronic device. This test was performed in accordance with JEDEC 22-A114. 5. HTOL: High Temperature Operating Life. This test is used to determine the effects of bias conditions and temperature on semiconductor devices over time. It simulates the devices’ operating condition in an accelerated way, through high temperature and/or bias voltage, and is primarily for device qualification and reliability monitoring. This test was performed in accordance with JEDEC JESD22-A108. 6. HTSL: High Temperature Storage Life. Devices are subjected to 1000 hours at 150oC per JESD22-A103. 7. MSL: Moisture sensitivity level pre-conditioning is performed per JESD22-A113. 8. Operating Junction Temp (Toj): Temperature of the die active circuitry during typical operation. 9. Stress Junction Temp (Tsj): Temperature of the die active circuitry during stress testing. QTR: 2013- 00266 Wafer Process: PHEMT-L Rev: 02 10. UHAST: Unbiased Highly Accelerated Stress Test. Devices are subjected to 96 hours of 85% relative humidity at a temperature of 130°C and pressure (15 PSIG). This test is performed in accordance with JESD22-A118. Qualification Sample Selection: All qualification devices used were manufactured and tested on standard production processes and met pre-stress acceptance test requirements. Summary of Qualification Tests: HMC1040 (QTR2012-00327) Initial electrical Test QTY IN 344 QTY OUT 344 MSL-3 Precondition 154 154 Complete Post MSL3 Electrical Test 154 154 Pass UHAST (preconditioned) 77 77 Complete Post UHAST electrical Test 77 77 Pass Temp. Cycle (preconditioned) 77 77 Complete Post Temp Cycle electrical Test 77 77 Pass HTSL 77 77 Complete Post HTSL Electrical Test 77 77 Pass HTOL 81 81 Complete Post HTOL Electrical test 81 81 Pass Physical Dimensions 15 15 Pass Solderability 6 6 Pass ESD Exposure 27 27 Complete Post ESD Electrical Test 27 27 Complete TEST PASS/FAIL NOTES Pass HBM Class 0 CDM Class IV QTR: 2013- 00266 Wafer Process: PHEMT-L Rev: 02 QTR: 2013- 00266 Wafer Process: PHEMT-L Rev: 02 HMC1065 (QTR2013-00194) Initial electrical Test QTY IN 302 QTY OUT 302 MSL-1 Precondition 105 105 Complete Post MSL1 Electrical Test 105 105 Pass HAST (preconditioned) 25 25 Complete Post HAST electrical Test 25 25 Pass Temp. Cycle (preconditioned) 80 80 Complete Post Temp Cycle electrical Test 80 80 Pass HTSL 80 80 Complete Post HTSL Electrical Test 80 80 Pass HTOL 78 78 Complete Post HTOL Electrical test 78 78 Pass Physical Dimensions 15 15 Pass Solderability 6 6 Pass ESD Exposure 39 39 Complete Post ESD Electrical Test 39 39 Complete TEST PASS/FAIL NOTES Pass HBM Class 1A CDM Class IV QTR: 2013- 00266 Wafer Process: PHEMT-L Rev: 02 PHEMT-L Failure Rate Estimate Based on the HTOL test results, a failure rate estimation was determined using the following parameters: With device case temp, Tc = 85°C HMC1040 (QTR2012-00327) Operating Junction Temp (Toj) =117°C(390°K) Stress Junction Temp (Tsj) = 175°C(448°K) HMC1065 (QTR2013-00194) Operating Junction Temp (Toj) =125°C(398°K) Stress Junction Temp (Tsj) = 175°C(448°K) Device hours: HMC1040 (QTR2012-00327) = (81 X 1000hrs) = 81,000 hours HMC1065 (QTR2013-00194) = (78 X 1000hrs) = 78,000 hours For PHEMT-L MMIC, Activation Energy = 1.16 eV Acceleration Factor (AF): HMC1040 (QTR2012-00327) Acceleration Factor = exp[1.16/8.6 e-5(1/390-1/448)] = 88.0 HMC1065 (QTR2013-00194) Acceleration Factor = exp[1.16/8.6 e-5(1/398-1/448)] = 43.9 QTR: 2013- 00266 Wafer Process: PHEMT-L Rev: 02 Equivalent hours = Device hours x Acceleration Factor Equivalent hours = (81,000x88.0)+(78,000x43.9) = 1.06x107 hours Since there were no failures and we used a time terminated test, F=0, and R = 2F+2 = 2 The failure rate was calculated using Chi Square Statistic: at 60% and 90% Confidence Level (CL), with 0 units out of spec and a 85°C package backside temp; Failure Rate λ60 = [(χ2)60,2]/(2X 1.06x107 )] = 1.8/ 2.11x107 = 8.67x10-8 failures/hour or 86.7 FIT or MTTF = 1.15x107 Hours λ90 = [(χ2)90,2]/(2X 1.06x107 )] = 4.6/ 2.11x107 = 2.18x10-7 failures/hour or 218 FIT or MTTF = 4.58x106 Hours