Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com Report Title: Qualification Test Report Report Type: See Attached Date: See Attached QTR: 2013- 00233 Wafer Process: PHEMT-B HMC154 HMC356 HMC372 HMC373 HMC374 HMC375 HMC376 HMC382 HMC484 HMC486 HMC486 HMC487 HMC489 HMC536 HMC536 HMC546 HMC546 HMC549 HMC590 HMC590 HMC591 HMC591 HMC592 HMC646 Rev: 03 QTR: 2013- 00233 Wafer Process: PHEMT-B Rev: 03 Introduction The testing performed for this report is designed to accelerate the predominant failure mode, electro-migration (EM), for the devices under test. The devices are stressed at high temperature and DC biased to simulate a lifetime of use at typical operating temperatures. Using the Arrhenius equation, the acceleration factor (AF) is calculated for the stress testing based on the stress temperature and the typical use operating temperature. This report is intended to summarize all of the High Temperature Operating Life Test (HTOL) data for the PHEMT-B process. The FIT/MTTF data contained in this report includes all the stress testing performed on this process to date and will be updated periodically as additional data becomes available. Data sheets for the tested devices can be found at www.hittite.com. Glossary of Terms & Definitions: 1. HTOL: High Temperature Operating Life. This test is used to determine the effects of bias conditions and temperature on semiconductor devices over time. It simulates the devices’ operating condition in an accelerated way, through high temperature and/or bias voltage, and is primarily for device qualification and reliability monitoring. This test was performed in accordance with JEDEC JESD22-A108. 2. MSL: Moisture sensitivity level pre-conditioning is performed per JESD22-A113. 3. Operating Junction Temp (Toj): Temperature of the die active circuitry during typical operation. 4. Stress Junction Temp (Tsj): Temperature of the die active circuitry during stress testing. 5. THB: Temperature & Humidity Bias. Devices are subjected to 1000 hours of 85% relative humidity at a temperature of 85°C. This test is performed in accordance with JESD22-A101. 6. Autoclave: 96 hours of temperature, humidity, and pressure (121C/100% RH, 14.7 psig). This test is performed in accordance with JESD22-A102. QTR: 2013- 00233 Wafer Process: PHEMT-B Rev: 03 Qualification Sample Selection: All qualification devices used were manufactured and tested on standard production processes and met pre-stress acceptance test requirements. Summary of Qualification Tests: HMC484 Qualification (QTR2007-00001) TEST QTY IN QTY OUT PASS/FAIL Initial Electrical 231 231 Complete MSL1 Preconditioning 231 231 Complete HTOL, 1000 hours Post HTOL Electrical Test Autoclave Post Autoclave Electrical Test THB, 1000 hours 74 74 Complete 74 74 Pass 75 75 Complete 75 75 Pass 77 77 Complete Post THB Electrical Test 77 77 Pass NOTES HMC374 (QTR2013-00360) TEST Initial electrical Test HTOL, 1000 hours (Tj=149°C) Final Electrical test – Post HTOL QTY IN 158 QTY OUT 158 PASS/FAIL Pass 158 158 Complete 158 158 Pass NOTES QTR: 2013- 00233 Wafer Process: PHEMT-B Rev: 03 HMC374 (QTR2013-00360) TEST Initial electrical Test HTOL, 1000 hours (Tj=144°C) Final Electrical test – Post HTOL QTY IN 158 QTY OUT 158 PASS/FAIL Pass 158 158 Complete 158 158 Pass NOTES QTR: 2013- 00233 Wafer Process: PHEMT-B Rev: 03 PHEMT-B Failure Rate Estimate Based on the HTOL test results, a failure rate estimation was determined using the following parameters: With device ambient case temp, Tc = 65°C HMC484 (QTR2007-00001) Operating Junction Temp (Toj) =65°C (338°K) Stress Junction Temp (Tsj) = 125°C (398°K) HMC374 (QTR2013-00360) Operating Junction Temp (Toj) =120°C (393°K) Stress Junction Temp (Tsj) = 149°C (422°K) HMC374 (QTR2013-00360) Operating Junction Temp (Toj) =120°C (393°K) Stress Junction Temp (Tsj) = 144°C (417°K) Device hours: HMC484 (QTR2007-00001) = (74 X 1000hrs) = 74,000 hours HMC374 (QTR2013-00360) = (158 X 1000hrs) = 158,000 hours HMC374 (QTR2013-00360) = (158 X 1000hrs) = 158,000 hours For PHEMT-B MMIC, Activation Energy = 1.4 eV Acceleration Factor (AF): HMC484 (QTR2007-00001) Acceleration Factor = exp[1.4/8.6x10-5(1/338-1/398)] = 1423.3 HMC374 (QTR2013-00360) Acceleration Factor = exp[1.4/8.6x10-5(1/393-1/422)] = 17.2 HMC374 (QTR2013-00360) Acceleration Factor = exp[1.4/8.6x10-5(1/393-1/417)] = 10.8 QTR: 2013- 00233 Wafer Process: PHEMT-B Rev: 03 Equivalent hours = Device hours x Acceleration Factor Equivalent hours = (74,000x1423.3)+(158,000x17.2)+(158,000x10.8) = 1.10x108 hours Since there were no failures and we used a time terminated test, F=0, and R = 2F+2 = 2 The failure rate was calculated using Chi Square Statistic: at 60% and 90% Confidence Level (CL), with 0 units out of spec and a 65°C package backside temp; Failure Rate 60 = [(2)60,2]/(2X 1.10x108 )] = 1.8/ 2.20x108 = 8.33x10-9 failures/hour or 8.3 FIT or MTTF = 1.20x108 Hours 90 = [(2)90,2]/(2X 1.10x108 )] = 4.6/ 2.20x108 = 2.10x10-8 failures/hour or 21.0 FIT or MTTF = 4.76x107 Hours