Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC1049LP5E v01.1213 Amplifiers - Low Noise - SMT GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 0.3 - 20 GHz Typical Applications Features The HMC1049LP5E is ideal for: Noise Figure: 1.8 dB • Test Instrumentation P1dB Output Power: +14.5 dBm • High Linearity Microwave Radios Psat Output Power: +17.5 dBm • VSAT & SATCOM High Gain: 15 dB • Military & Space Output IP3: +29 dBm Supply Voltage: Vdd = +7V @ 70 mA 50 Ohm Matched Input/Output 32 Lead 5x5 mm SMT Package: 25mm2 Functional Diagram General Description The HMC1049LP5E is a GaAs MMIC Low Noise Amplifier which operates between 0.3 and 20 GHz. This LNA provides 15 dB of small signal gain, 1.8 dB noise figure, and output IP3 of 29 dBm, while requiring only 70 mA from a +7 V supply. The P1dB output power of 14.5 dBm enables the LNA to function as a LO driver for balanced, I/Q or image reject mixers. Vdd can be applied to pin 2 or pin 21. Pin 21 will require a bias tee. The HMC1049LP5E amplifier I/Os are internally matched to 50 Ohms and the device is supplied in a compact, leadless QFN 5x5 mm surface mount package. Electrical Specifications, TA = +25° C, Vdd = +7V, Idd = 70 mA [1] Parameter Min. Frequency Range Typ. Max. Min. 0.3 - 1 Gain 13.5 Gain Variation Over Temperature 12 0.006 2.5 Max. Min. 1 - 14 16.5 Noise Figure Typ. 1.8 Max. 14 - 20 15 10 0.019 3.5 Typ. 2.5 Units GHz 13 dB 0.017 dB/°C 2.7 4.0 dB Input Return Loss 15 13 14 Output Return Loss 8 15 13 dB Output Power for 1 dB Compression (P1dB) 15 14.5 13 dBm Saturated Output Power (Psat) Output Third Order Intercept (IP3) [2] Total Supply Current dB 18 17.5 16 dBm 31 29 26 dBm 70 70 70 mA [1] Adjust Vgg between -2 to 0V to achieve Idd = 70 mA typical. [2] Measurement taken at Pout / tone = +8 dBm. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1049LP5E v01.1213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 0.3 - 20 GHz Data taken with Vdd applied to pin 2. Broadband Gain & Return Loss Gain vs. Temperature 20 18 16 5 GAIN (dB) RESPONSE (dB) 10 0 -5 -10 14 12 10 -15 8 -20 -25 6 0 2 4 6 8 10 12 14 16 18 20 22 24 0 2 4 6 S21 S11 12 14 16 18 20 0 -5 -5 -10 -15 -20 +85 C -40 C Output Return Loss vs. Temperature 0 RETURN LOSS (dB) RETURN LOSS (dB) 10 +25 C S22 Input Return Loss vs. Temperature -25 -10 -15 -20 -25 -30 -30 0 2 4 6 8 10 12 14 16 18 20 0 22 2 4 6 FREQUENCY (GHz) +25 C 8 10 12 14 16 18 20 FREQUENCY (GHz) +85 C +25 C -40 C +85 C -40 C Noise Figure vs. Temperature, Low Frequency Noise Figure vs. Temperature 6 6 5 5 NOISE FIGURE (dB) NOISE FIGURE (dB) 8 FREQUENCY (GHz) FREQUENCY (GHz) Amplifiers - Low Noise - SMT 20 15 4 3 2 1 4 3 2 1 0 0 0 2 4 6 8 10 12 14 16 18 20 0 0.2 0.4 0.6 FREQUENCY (GHz) +25 C +85 C 0.8 1 1.2 1.4 1.6 1.8 2 FREQUENCY (GHz) -40 C +25 C +85 C -40 C For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC1049LP5E v01.1213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 0.3 - 20 GHz Data taken with Vdd applied to pin 2. 6 5 5 NOISE FIGURE (dB) NOISE FIGURE (dB) Noise Figure vs. Idd 6 4 3 2 1 4 3 2 1 0 0 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 FREQUENCY (GHz) +6V 8 10 12 14 16 18 20 FREQUENCY (GHz) +7V +8V 60 mA Output IP3 vs. Temperature 70 mA 80 mA P1dB vs. Temperature 35 20 30 17 P1dB (dBm) IP3 (dBm) Amplifiers - Low Noise - SMT Noise Figure vs. Vdd 25 20 14 11 8 15 5 10 0 2 4 6 8 10 12 14 16 18 0 20 2 4 6 +25 C 8 10 12 14 16 18 20 FREQUENCY (GHz) FREQUENCY (GHz) +85 C +25 C -40 C Psat vs. Temperature +85 C -40 C P1dB vs. Vdd 23 18 16 14 P1dB (dBm) Psat (dBm) 20 17 14 12 10 8 6 4 11 2 8 0 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 FREQUENCY (GHz) +25 C 3 +85 C 8 10 12 14 16 18 20 FREQUENCY (GHz) -40 C +5V +6V +7V For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1049LP5E v01.1213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 0.3 - 20 GHz Data taken with Vdd applied to pin 2. 0 20 -5 18 -10 16 14 12 -15 -20 -25 10 -30 8 -35 6 -40 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 FREQUENCY (GHz) +5V +6V +7V 12 +25 C 14 16 18 20 22 +85 C -40 C Power Compression @ 10 GHz 24 Pout (dBm), GAIN (dB), PAE (%) 24 Pout (dBm), GAIN (dB), PAE (%) 10 FREQUENCY (GHz) Power Compression @ 2 GHz 20 16 12 8 4 0 -10 -8 -6 -4 -2 0 2 4 6 8 20 16 12 8 4 0 -10 10 -8 -6 -4 INPUT POWER (dBm) Gain -2 0 2 4 6 8 10 INPUT POWER (dBm) Pout Gain PAE Pout PAE Noise Figure, Gain & Power vs. Supply Voltage @ 12 GHz Power Compression @ 18 GHz 20 24 4 18 3 12 2 6 1 GAIN (dB), Psat (dBm) 16 12 8 4 0 0 0 -9 -6 -3 0 3 6 9 5 5.5 INPUT POWER (dBm) Gain Pout PAE NOISE FiIGURE (dB) Pout (dBm), GAIN (dB), PAE (%) Amplifiers - Low Noise - SMT Reverse Isolation vs. Temperature 22 ISOLATION (dB) Psat (dBm) Psat vs. Vdd 6 Vdd (V) GAIN 6.5 7 Psat NOISE FIGURE For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC1049LP5E v01.1213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 0.3 - 20 GHz Data taken with Vdd applied to pin 2. 5 GAIN (dB), Psat (dBm) 24 4 18 3 12 2 6 1 NOISE FIGURE (dB) Amplifiers - Low Noise - SMT Noise Figure, Gain & Power vs. Supply Current @ 12 GHz 0 0 50 60 70 80 Idd (mA) GAIN Psat NOISE FIGURE For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1049LP5E v01.1213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 0.3 - 20 GHz Data taken with Vdd applied to bias tee at pin 21. Gain vs. Temperature [1] Broadband Gain & Return Loss [1] 20 18 16 GAIN (dB) RESPONSE (dB) 10 0 -10 14 12 10 -20 8 -30 6 0 4 8 12 16 20 24 0 2 4 6 S21 S11 S22 10 +25 C 12 14 16 18 20 +85 C -40 C Output IP3 vs. Temperature [1] Noise Figure vs. Temperature [1] 6 40 5 35 4 30 IP3 (dBm) NOISE FIGURE (dB) 8 FREQUENCY (GHz) FREQUENCY (GHz) 3 25 2 20 1 15 0 Amplifiers - Low Noise - SMT 20 10 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 FREQUENCY (GHz) +25 C 8 10 12 14 16 18 20 FREQUENCY (GHz) +85 C -40 C +25 C +85 C -40 C Psat vs. Temperature [1] P1dB vs. Temperature [1] 20 24 22 17 Psat (dBm) P1dB (dBm) 20 14 11 18 16 14 12 8 10 5 8 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 FREQUENCY (GHz) +25 C +85 C 8 10 12 14 16 18 20 FREQUENCY (GHz) -40 C +25 C +85 C -40 C [1] Vdd= +4V, supply to bias tee. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6 HMC1049LP5E v01.1213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 0.3 - 20 GHz Absolute Maximum Ratings Amplifiers - Low Noise - SMT Drain Bias Voltage (Vdd) +10V Typical Supply Current vs. Vdd Vdd (V) Idd (mA) Drain Bias Voltage (RF out / Vdd) +7V +5 70 RF Input Power +18 dBm +6 70 Gate Bias Voltage, Vgg1 -2V to +0.2V +7 70 Channel Temperature 175 °C Continuous Pdiss (T = 85 °C) (derate 37.1 mW/°C above 85 °C) 3.34 W Thermal Resistance (Channel to die bottom) 26.9 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ESD Sensitivity (HBM) Class 1A Adjust Vgg1 to achieve Idd = 70 mA ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1.LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3.LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating [2] Package Marking [1] HMC1049LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 H1049 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C 7 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1049LP5E v01.1213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 0.3 - 20 GHz Pin Descriptions Function Description 1, 3, 6-12, 14, 17-20, 23-29, 31, 32 N/C No connection required. The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 2 Vdd Power supply voltage for the amplifier. External bypass capacitors 100 pF, and 0.01 uF are required. 4, 22 GND These pins and the exposed ground paddle must be connected to RF/DC ground. 5 RFIN This pin is DC coupled and matched to 50 Ohms. 13 Vgg Gate control for amplifier. External bypass capacitors 100 pF, 0.01uF, and 4.7 uF are required. Adjust voltage to achieve typical Idd. 15, 16 ACG3, ACG2 Low frequency termination. External bypass capacitors 100 pF are required. 21 RFOUT/Vdd This pin is DC coupled and matched to 50 Ohms. 30 ACG1 Low frequency termination. External bypass capacitor 100 pF required. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Amplifiers - Low Noise - SMT Pad Number 8 HMC1049LP5E v01.1213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 0.3 - 20 GHz Amplifiers - Low Noise - SMT Evaluation PCB J6 C8 600-00541-00-1 J5 J3 + IN C5 VDD C1 OUT C2 U1 J2 C3 C6 C4 C7 J1 J4 C9 VGG + List of Materials for Evaluation PCB EV1HMC1049LP5 [1] Item Description J1, J2, J5, J6 PCB Mount SMA RF Connector. J3, J4 DC Pins. C1 - C4 100 pF Capacitor, 0402 Pkg. C5 - C7 10000 pF Capacitor, 0402 Pkg. C8 - C9 4.7 uF Capacitor, Tantalum. U1 HMC1049LP5E. PCB [1] 600-00541-00-1 Evaluation PCB. The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Circuit Board Material: Rogers 4350 or Arlon 25FR 9 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC1049LP5E v01.1213 GaAs pHEMT MMIC LOW NOISE AMPLIFIER, 0.3 - 20 GHz Amplifiers - Low Noise - SMT Evaluation PCB Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 10