SANYO MCH6660_12

MCH6660
Ordering number : ENA1993A
SANYO Semiconductors
DATA SHEET
N-Channel and P-Channel Silicon MOSFET
MCH6660
General-Purpose Switching Device
Applications
Features
•
•
•
•
ON-resistance Nch : RDS(on)1=105mΩ(typ.)
Pch : RDS(on)1=205mΩ(typ.)
1.8V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
N-channel
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
Allowable Power Dissipation
ID
IDP
PD
Channel Temperature
Storage Temperature
Drain Current (Pulse)
P-channel
--20
V
±10
±10
V
2
--1.5
A
8
--6
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
W
Tch
150
°C
Tstg
--55 to +150
°C
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
5
Packing Type : TL
Marking
4
0 t o 0.02
1
2
TL
3
0.65
XM
LOT No.
LOT No.
0.25
MCH6660-TL-H
0.15
2.1
1.6
0.25
Product & Package Information
unit : mm (typ)
7022A-006
6
A
0.8
Package Dimensions
2.0
Unit
20
0.3
0.07
0.85
Electrical Connection
1
2
3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
6
5
4
SANYO : MCPH6
6
5
4
1
2
3
http://semicon.sanyo.com/en/network
70412 TKIM/N0911PE TKIM TC-00002657 No. A1993-1/9
MCH6660
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=20V, VGS=0V
IGSS
VGS(off)
| yfs |
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1A
1.9
RDS(on)1
ID=1A, VGS=4.5V
105
136
mΩ
RDS(on)2
ID=0.5A, VGS=2.5V
147
205
mΩ
RDS(on)3
ID=0.3A, VGS=1.8V
212
318
mΩ
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
20
V
0.4
1
μA
±10
μA
1.3
V
S
128
pF
28
pF
Crss
21
pF
td(on)
tr
5.1
ns
11
ns
VDS=10V, f=1MHz
See specified Test Circuit.
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
IS=2A, VGS=0V
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0V
VDS=10V, VGS=4.5V, ID=2A
14.5
ns
12
ns
1.8
nC
0.3
nC
0.55
0.85
nC
1.2
V
--1
μA
±10
μA
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
--20
V
VDS=--20V, VGS=0V
VGS=±8V, VDS=0V
VDS=--10V, ID=--1mA
Forward Transfer Admittance
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
ID=--750mA, VGS=--4.5V
205
266
mΩ
Static Drain-to-Source On-State Resistance
ID=--300mA, VGS=--2.5V
295
413
mΩ
RDS(on)3
ID=--100mA, VGS=--1.8V
430
645
mΩ
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
VDS=--10V, ID=--750mA
--0.4
--1.4
1.9
V
S
120
pF
26
pF
Crss
20
pF
td(on)
5.3
ns
Rise Time
tr
9.7
ns
Turn-OFF Delay Time
td(off)
16
ns
Fall Time
Total Gate Charge
tf
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--10V, VGS=--4.5V, ID=--1.5A
14
ns
1.7
nC
0.28
nC
0.47
IS=--1.5A, VGS=0V
--0.89
nC
--1.2
V
No. A1993-2/9
MCH6660
Switching Time Test Circuit
[N-channel]
4.5V
0V
[P-channel]
VDD=10V
VIN
0V
--4.5V
VDD= --10V
VIN
ID=1A
RL=10Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
D
PW=10μs
D.C.≤1%
G
VOUT
G
MCH6660
P.G
ID= --750mA
RL=13.3Ω
VIN
50Ω
MCH6660
P.G
S
50Ω
S
Ordering Information
Device
MCH6660-TL-H
Shipping
memo
MCPH6
3,000pcs./reel
Pb Free and Halogen Free
ID -- VDS
V
1.8
2.5V
4.5V
[Nch]
ID -- VGS
[Nch]
VDS=10V
2.0
0.5
VGS=1.2V
°C
1.0
--25
1.0
1.5
5°C
1.5V
Ta
=7
Drain Current, ID -- A
1.5
2.5
Ta=25°C
8.0V
6.0V
2.0
0.5
25°
C
Drain Current, ID -- A
Package
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Drain-to-Source Voltage, VDS -- V
RDS(on) -- VGS
1A
250
200
150
100
50
0
0
1
2
3
4
5
6
7
8
Gate-to-Source Voltage, VGS -- V
0.2
9
10
IT16645
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
400
Ta=25°C
0.5A
300
0
IT16372
[Nch]
ID=0.3A
350
0
1.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
400
0.9
1.8
2.0
IT16373
[Nch]
350
300
0.3A
, I D=
1.8V
=
VGS
0.5A
, I D=
2.5V
=
VGS
=1.0A
.5V, I D
4
=
V GS
250
200
150
100
50
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT16646
No. A1993-3/9
MCH6660
VDS=10V
7
5
3
2
=
Ta
1.0
7
5
5°C
--2
C
75°
°C
25
3
2
0.1
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
SW Time -- ID
100
7
5
tf
3
2
td(off)
10
7
5
tr
td(on)
0
2
3
5 7 0.1
2
3
5 7 1.0
2
3
0.6
2
Ciss
100
7
5
Coss
Crss
3
0
10
7
5
Drain Current, ID -- A
3
2
0.8
1.0
1.2
1.4
1.6
Total Gate Charge, Qg -- nC
14
16
ms
10
10
0μ
s
1m
s
0m
s
op
n
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
2
3
5 7 1.0
2
3
5 7 10
2
3
ID -- VGS
8V
--2.0
5 7 100
IT16647
[Pch]
VDS= --10V
--1.8
--0.6
VGS= --1.0V
--1.0
--0.8
--0.6
--0.4
--0.4
--0.2
--0.2
0
--0.1 --0.2
--0.3 --0.4 --0.5 --0.6
--0.7 --0.8
Drain-to-Source Voltage, VDS -- V
--0.9 --1.0
IT14614
5°C
--0.8
--1.2
0
0
--0.5
--1.0
Ta=
7
--1.0
--1.4
--2
5°C
V
--1.5
--1.2
25
°C
--1.4
Drain Current, ID -- A
--1.6
--2
.5V
--1.6
20
IT16379
[Nch]
Drain-to-Source Voltage, VDS -- V
[Pch]
18
tio
0.01
0.1
2.0
--1
.
5V
--3
.
V
--4.
5V
--8.0
--1.8
12
era
IT16380
ID -- VDS
--2.0
1.8
10
10
DC
2
0.5
0.6
8
3
1.0
0.4
6
ID=2A
1.0
7
5
0.1
7
5
0.2
4
IDP=8A (PW≤10μs)
2
0
2
ASO
3
1.5
[Nch]
f=1MHz
Drain-to-Source Voltage, VDS -- V
3.5
2.0
1.2
IT16377
3
10
[Nch]
2.5
1.0
5
5 7 10
3.0
0.8
7
VDS=10V
ID=2A
4.0
0
0.4
Ciss, Coss, Crss -- VDS
IT16378
VGS -- Qg
4.5
0
0.2
2
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
0.01
7
5
3
2
1000
3
2
1.0
0.01
Drain Current, ID -- A
0.1
7
5
3
2
Diode Forward Voltage, VSD -- V
[Nch]
VDD=10V
VGS=4.5V
3
2
[Nch]
VGS=0V
1.0
7
5
3
2
0.001
5 7 10
IT16376
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
1000
7
5
IS -- VSD
10
7
5
3
2
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
[Nch]
Ta=
75°
C
25°C
--25°
C
| yfs | -- ID
10
--1.5
--2.0
--2.5
Gate-to-Source Voltage, VGS -- V
--3.0
IT14615
No. A1993-4/9
MCH6660
RDS(on) -- VGS
700
[Pch]
RDS(on) -- Ta
700
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
600
ID= --0.1A
500
--0.3A
400
--0.75A
300
200
100
0
--1
--2
--3
--4
--5
--6
--7
--8
Gate-to-Source Voltage, VGS -- V
| yfs | -- ID
--0
, I D=
--2.5V
5A
--0.7
V, I D=
--4.5
V GS=
200
100
--40
--20
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
[Pch]
VDS= --10V
160
IT16649
IS -- VSD
5
140
[Pch]
VGS=0V
3
2
C
5°
--2
=
C
Ta
75°
1.0
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
C
°C
25
25°C --25
°
2
3
2
0.1
2
3
5
7 --0.1
2
3
5
7 --1.0
Drain Current, ID -- A
SW Time -- ID
5
3
2
--0.01
3
0
--0.2
--0.4
--0.6
--0.8
--1.0
Diode Forward Voltage, VSD -- V
IT14618
[Pch]
VDD= --10V
VGS= --4.5V
Ciss, Coss, Crss -- VDS
3
--1.2
IT14619
[Pch]
f=1MHz
2
Ciss
2
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
.3A
=
VGS
300
IT16648
3
7
--0.01
td (off)
tf
10
tr
7
td(on)
5
100
7
5
Coss
Crss
3
2
3
10
2
--0.1
2
3
5
7
2
--1.0
Drain Current, ID -- A
7
3
--2
--4
--6
--8
--10
--12
[Pch]
--10
7
5
--3.5
Drain Current, ID -- A
2
--2.5
--2.0
3
2
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Total Gate Charge, Qg -- nC
1.6
1.8
2.0
IT14622
0m
s
op
Operation in
this area is
limited by RDS(on).
2
--0.5
10
0μ
s
ms
10
er
3
--1.0
0
DC
--20
IT14621
s
10
ID= --1.5A
--18
[Pch]
1m
--1.0
7
5
--0.1
7
5
--1.5
--16
ASO
IDP= --6A (PW≤10μs)
3
--3.0
--14
Drain-to-Source Voltage, VDS -- V
VDS= --10V
ID= --1.5A
--4.0
0
IT14620
VGS -- Qg
--4.5
Gate-to-Source Voltage, VGS -- V
=
VGS
400
0
--60
--10
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
5
--9
.1A
= --0
V, I D
--1.8
500
5°C
0
600
Ta=
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
ati
on
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
--0.01
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Drain-to-Source Voltage, VDS -- V
5 7 --100
IT16650
No. A1993-5/9
MCH6660
PD -- Ta
Allowable Power Dissipation, PD -- W
1.0
[Nch/Pch]
When mounted on ceramic substrate
(900mm2×0.8mm) 1unit
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT16651
No. A1993-6/9
MCH6660
Embossed Taping Specification
MCH6660-TL-H
No. A1993-7/9
MCH6660
Outline Drawing
MCH6660-TL-H
Land Pattern Example
Mass (g) Unit
0.008 mm
* For reference
Unit: mm
2.1
0.6
0.4
0.65 0.65
No. A1993-8/9
MCH6660
Note on usage : Since the MCH6660 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of July, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1993-9/9