MCH6660 Ordering number : ENA1993A SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFET MCH6660 General-Purpose Switching Device Applications Features • • • • ON-resistance Nch : RDS(on)1=105mΩ(typ.) Pch : RDS(on)1=205mΩ(typ.) 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions N-channel VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Allowable Power Dissipation ID IDP PD Channel Temperature Storage Temperature Drain Current (Pulse) P-channel --20 V ±10 ±10 V 2 --1.5 A 8 --6 PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit W Tch 150 °C Tstg --55 to +150 °C • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 5 Packing Type : TL Marking 4 0 t o 0.02 1 2 TL 3 0.65 XM LOT No. LOT No. 0.25 MCH6660-TL-H 0.15 2.1 1.6 0.25 Product & Package Information unit : mm (typ) 7022A-006 6 A 0.8 Package Dimensions 2.0 Unit 20 0.3 0.07 0.85 Electrical Connection 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 6 5 4 SANYO : MCPH6 6 5 4 1 2 3 http://semicon.sanyo.com/en/network 70412 TKIM/N0911PE TKIM TC-00002657 No. A1993-1/9 MCH6660 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS ID=1mA, VGS=0V VDS=20V, VGS=0V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A 1.9 RDS(on)1 ID=1A, VGS=4.5V 105 136 mΩ RDS(on)2 ID=0.5A, VGS=2.5V 147 205 mΩ RDS(on)3 ID=0.3A, VGS=1.8V 212 318 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time 20 V 0.4 1 μA ±10 μA 1.3 V S 128 pF 28 pF Crss 21 pF td(on) tr 5.1 ns 11 ns VDS=10V, f=1MHz See specified Test Circuit. Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=2A, VGS=0V V(BR)DSS IDSS IGSS ID=--1mA, VGS=0V VDS=10V, VGS=4.5V, ID=2A 14.5 ns 12 ns 1.8 nC 0.3 nC 0.55 0.85 nC 1.2 V --1 μA ±10 μA [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage --20 V VDS=--20V, VGS=0V VGS=±8V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance VGS(off) | yfs | RDS(on)1 RDS(on)2 ID=--750mA, VGS=--4.5V 205 266 mΩ Static Drain-to-Source On-State Resistance ID=--300mA, VGS=--2.5V 295 413 mΩ RDS(on)3 ID=--100mA, VGS=--1.8V 430 645 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time VDS=--10V, ID=--750mA --0.4 --1.4 1.9 V S 120 pF 26 pF Crss 20 pF td(on) 5.3 ns Rise Time tr 9.7 ns Turn-OFF Delay Time td(off) 16 ns Fall Time Total Gate Charge tf Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--10V, VGS=--4.5V, ID=--1.5A 14 ns 1.7 nC 0.28 nC 0.47 IS=--1.5A, VGS=0V --0.89 nC --1.2 V No. A1993-2/9 MCH6660 Switching Time Test Circuit [N-channel] 4.5V 0V [P-channel] VDD=10V VIN 0V --4.5V VDD= --10V VIN ID=1A RL=10Ω VIN D PW=10μs D.C.≤1% VOUT D PW=10μs D.C.≤1% G VOUT G MCH6660 P.G ID= --750mA RL=13.3Ω VIN 50Ω MCH6660 P.G S 50Ω S Ordering Information Device MCH6660-TL-H Shipping memo MCPH6 3,000pcs./reel Pb Free and Halogen Free ID -- VDS V 1.8 2.5V 4.5V [Nch] ID -- VGS [Nch] VDS=10V 2.0 0.5 VGS=1.2V °C 1.0 --25 1.0 1.5 5°C 1.5V Ta =7 Drain Current, ID -- A 1.5 2.5 Ta=25°C 8.0V 6.0V 2.0 0.5 25° C Drain Current, ID -- A Package 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS 1A 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V 0.2 9 10 IT16645 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta 400 Ta=25°C 0.5A 300 0 IT16372 [Nch] ID=0.3A 350 0 1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 400 0.9 1.8 2.0 IT16373 [Nch] 350 300 0.3A , I D= 1.8V = VGS 0.5A , I D= 2.5V = VGS =1.0A .5V, I D 4 = V GS 250 200 150 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT16646 No. A1993-3/9 MCH6660 VDS=10V 7 5 3 2 = Ta 1.0 7 5 5°C --2 C 75° °C 25 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A SW Time -- ID 100 7 5 tf 3 2 td(off) 10 7 5 tr td(on) 0 2 3 5 7 0.1 2 3 5 7 1.0 2 3 0.6 2 Ciss 100 7 5 Coss Crss 3 0 10 7 5 Drain Current, ID -- A 3 2 0.8 1.0 1.2 1.4 1.6 Total Gate Charge, Qg -- nC 14 16 ms 10 10 0μ s 1m s 0m s op n Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit 2 3 5 7 1.0 2 3 5 7 10 2 3 ID -- VGS 8V --2.0 5 7 100 IT16647 [Pch] VDS= --10V --1.8 --0.6 VGS= --1.0V --1.0 --0.8 --0.6 --0.4 --0.4 --0.2 --0.2 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT14614 5°C --0.8 --1.2 0 0 --0.5 --1.0 Ta= 7 --1.0 --1.4 --2 5°C V --1.5 --1.2 25 °C --1.4 Drain Current, ID -- A --1.6 --2 .5V --1.6 20 IT16379 [Nch] Drain-to-Source Voltage, VDS -- V [Pch] 18 tio 0.01 0.1 2.0 --1 . 5V --3 . V --4. 5V --8.0 --1.8 12 era IT16380 ID -- VDS --2.0 1.8 10 10 DC 2 0.5 0.6 8 3 1.0 0.4 6 ID=2A 1.0 7 5 0.1 7 5 0.2 4 IDP=8A (PW≤10μs) 2 0 2 ASO 3 1.5 [Nch] f=1MHz Drain-to-Source Voltage, VDS -- V 3.5 2.0 1.2 IT16377 3 10 [Nch] 2.5 1.0 5 5 7 10 3.0 0.8 7 VDS=10V ID=2A 4.0 0 0.4 Ciss, Coss, Crss -- VDS IT16378 VGS -- Qg 4.5 0 0.2 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 0.01 7 5 3 2 1000 3 2 1.0 0.01 Drain Current, ID -- A 0.1 7 5 3 2 Diode Forward Voltage, VSD -- V [Nch] VDD=10V VGS=4.5V 3 2 [Nch] VGS=0V 1.0 7 5 3 2 0.001 5 7 10 IT16376 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 1000 7 5 IS -- VSD 10 7 5 3 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S [Nch] Ta= 75° C 25°C --25° C | yfs | -- ID 10 --1.5 --2.0 --2.5 Gate-to-Source Voltage, VGS -- V --3.0 IT14615 No. A1993-4/9 MCH6660 RDS(on) -- VGS 700 [Pch] RDS(on) -- Ta 700 [Pch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 600 ID= --0.1A 500 --0.3A 400 --0.75A 300 200 100 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V | yfs | -- ID --0 , I D= --2.5V 5A --0.7 V, I D= --4.5 V GS= 200 100 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C [Pch] VDS= --10V 160 IT16649 IS -- VSD 5 140 [Pch] VGS=0V 3 2 C 5° --2 = C Ta 75° 1.0 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 C °C 25 25°C --25 ° 2 3 2 0.1 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A SW Time -- ID 5 3 2 --0.01 3 0 --0.2 --0.4 --0.6 --0.8 --1.0 Diode Forward Voltage, VSD -- V IT14618 [Pch] VDD= --10V VGS= --4.5V Ciss, Coss, Crss -- VDS 3 --1.2 IT14619 [Pch] f=1MHz 2 Ciss 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns .3A = VGS 300 IT16648 3 7 --0.01 td (off) tf 10 tr 7 td(on) 5 100 7 5 Coss Crss 3 2 3 10 2 --0.1 2 3 5 7 2 --1.0 Drain Current, ID -- A 7 3 --2 --4 --6 --8 --10 --12 [Pch] --10 7 5 --3.5 Drain Current, ID -- A 2 --2.5 --2.0 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Total Gate Charge, Qg -- nC 1.6 1.8 2.0 IT14622 0m s op Operation in this area is limited by RDS(on). 2 --0.5 10 0μ s ms 10 er 3 --1.0 0 DC --20 IT14621 s 10 ID= --1.5A --18 [Pch] 1m --1.0 7 5 --0.1 7 5 --1.5 --16 ASO IDP= --6A (PW≤10μs) 3 --3.0 --14 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --1.5A --4.0 0 IT14620 VGS -- Qg --4.5 Gate-to-Source Voltage, VGS -- V = VGS 400 0 --60 --10 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5 --9 .1A = --0 V, I D --1.8 500 5°C 0 600 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C ati on Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 1unit --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 --100 IT16650 No. A1993-5/9 MCH6660 PD -- Ta Allowable Power Dissipation, PD -- W 1.0 [Nch/Pch] When mounted on ceramic substrate (900mm2×0.8mm) 1unit 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16651 No. A1993-6/9 MCH6660 Embossed Taping Specification MCH6660-TL-H No. A1993-7/9 MCH6660 Outline Drawing MCH6660-TL-H Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No. A1993-8/9 MCH6660 Note on usage : Since the MCH6660 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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