Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC594LC3B v03.0514 AMPLIFIERS - LOW NOISE - SMT GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Typical Applications Features The HMC594LC3B is ideal for: Gain Flatness: ±0.2 dB • Fixed Microwave Noise Figure: 3 dB • Point-to-Multi-Point Radios Gain: 10 dB • Test & Measurement Equipment Output IP3: +36 dBm • Radar & Sensors DC Supply: +5V @ 95mA / +6V @ 100 mA • Military & Space 50 Ohm Matched Input/Output RoHS Compliant 3x3 mm SMT package Functional Diagram General Description The HMC594LC3B is a GaAs pHEMT MMIC Low Noise Amplifier (LNA) which operates from 2 to 4 GHz. The HMC594LC3B features extremely flat performance characteristics including 10 dB of small signal gain, 3 dB of noise figure and output IP3 of +36 dBm across the operating band. This high linearity LNA is ideal for test & measurement equipment and military assemblies due to its compact size, consistent output power and DC blocked RF I/O’s. The HMC594LC3B is also available in chip form as the HMC594. Electrical Specifications, TA = +25° C, Vdd = +5V, Idd = 95 mA, Vdd = +6V, Idd = 100mA* Parameter Min. Frequency Range Gain Typ. Max. 2-4 7 Gain Variation Over Temperature Units GHz 10 dB 0.015 dB/ °C Noise Figure 3 Input Return Loss 15 dB Output Return Loss 17 dB 21 dBm Saturated Output Power (Psat) 22 dBm Output Third Order Intercept (IP3) 36 Supply Current (Idd) 100 Output Power for 1 dB Compression (P1dB) 18 4 dB dBm 130 mA *Adjust Vgg between -1.5V to -0.5V to achieve Idd = 100mA typical for 6V or Idd = 95mA typical for 5V. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC594LC3B v03.0514 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Broadband Gain & Return Loss [1] Gain vs. Temperature [1] 15 10 11 10 0 S21 S11 S22 -5 GAIN (dB) RESPONSE (dB) 5 -10 -15 9 8 +25C +85C -40C 7 -20 6 -25 -30 5 1 2 3 4 5 6 7 8 2 9 2.25 2.5 FREQUENCY (GHz) Input Return Loss vs. Temperature [1] 3.25 3.5 3.75 4 0 -5 RETURN LOSS (dB) +25C +85C -40C -5 RETURN LOSS (dB) 3 Output Return Loss vs. Temperature [1] 0 -10 -15 -20 +25C +85C -40C -10 -15 -20 -25 -25 -30 2 2.25 2.5 2.75 3 3.25 3.5 3.75 4 2 2.25 2.5 FREQUENCY (GHz) 25 24 24 23 23 Psat (dBm) 26 25 22 21 20 3.25 3.5 3.75 4 3.5 3.75 4 22 21 20 19 +25C +85C -40C 18 3 Psat vs. Temperature [1] 26 19 2.75 FREQUENCY (GHz) P1dB vs. Temperature [1] P1dB (dBm) 2.75 FREQUENCY (GHz) AMPLIFIERS - LOW NOISE - SMT 12 +25C +85C -40C 18 17 17 16 16 2 2.25 2.5 2.75 3 3.25 FREQUENCY (GHz) 3.5 3.75 4 2 2.25 2.5 2.75 3 3.25 FREQUENCY (GHz) [1] Typical response for 5V and 6V Vdd For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC594LC3B v03.0514 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Power Compression @ 3 GHz, 6V Power Compression @ 3 GHz, 5V Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 25 Pout Gain PAE 20 15 10 5 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 Pout Gain PAE 20 15 10 5 0 -10 -8 16 -6 -4 -2 INPUT POWER (dBm) 0 2 4 6 8 10 12 14 16 INPUT POWER (dBm) Output IP3 vs. Temperature [1] Reverse Isolation vs. Temperature [1] 0 40 38 -5 36 ISOLATION (dB) 34 OIP3 (dBm) AMPLIFIERS - LOW NOISE - SMT 25 32 30 +25C +85C -40C 28 26 24 -10 +25C +85C -40C -15 -20 -25 22 20 -30 2 2.25 2.5 2.75 3 3.25 3.5 3.75 2 4 2.25 2.5 FREQUENCY (GHz) ISOLATION (dB) -5 +25C +85C -40C -20 -25 -30 2 2.25 2.5 2.75 3 3.25 FREQUENCY (GHz) 3.5 3.75 4 GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 0 -15 3 3.25 3.5 3.75 4 Gain, Power & OIP3 vs. Supply Voltage @ 3 GHz Reverse Isolation vs. Temperature [1] -10 2.75 FREQUENCY (GHz) 40 35 Gain P1dB Psat OIP3 30 25 20 15 10 5 4.5 5 5.5 6 6.5 Vdd SUPPLY VOLTAGE (V) [1] Typical response for 5V and 6V Vdd 3 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC594LC3B v03.0514 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz Drain Bias Voltage (Vdd) 7V RF Input Power (RFIN)(Vdd = +6V) +15 dBm Channel Temperature 175 °C Continuous Pdiss (T = 85 °C) (derate 10 mW/°C above 85 °C) 0.9 W Thermal Resistance (channel to ground paddle) 100 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Typical Supply Current vs. Vdd Vdd (V) Idd (mA) +5.5 97 +6.0 100 +6.5 103 Note: Amplifier will operate over full voltage range shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing AMPLIFIERS - LOW NOISE - SMT Absolute Maximum Ratings NOTES: 1. PACKAGE BODY MATERIAL: ALUMINA 2. LEAD AND GROUND PADDLE PLATING: GOLD FLASH OVER Ni. 3. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. Package Information Part Number Package Body Material Lead Finish HMC594LC3B Alumina, White Gold over Nickel MSL Rating MSL3 [1] Package Marking [2] H594 XXXX [1] Max peak reflow temperature of 260 °C [2] 4-Digit lot number XXXX For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 4 HMC594LC3B v03.0514 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz AMPLIFIERS - LOW NOISE - SMT Pin Descriptions 5 Pin Number Function Description 1, 3, 7, 9 GND Package bottom must also be connected to RF/DC ground 2 RFIN This pin is AC coupled and matched to 50 Ohms. 4, 6 10, 12 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 5 Vgg Gate supply voltage for the amplifier. Adjust to achieve Idd= 100mA. External bypass capacitors are required. 8 RFOUT This pin is AC coupled and matched to 50 Ohms. 11 Vdd Power Supply Voltage for the amplifier. External bypass capacitors are required. Interface Schematic Application Circuit Component Value C1, C4 100 pF C2, C5 1,000 pF C3, C6 2.2 µF For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC594LC3B v03.0514 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2 - 4 GHz AMPLIFIERS - LOW NOISE - SMT Evaluation PCB List of Materials for Evaluation PCB 109712 Item Description J1 - J2 SRI SMA Connector J3 - J6 DC Pin C1 - C2 100 pF Capacitor, 0402 Pkg. C3 - C4 1000 pF Capacitor, 0603 Pkg. C5 - C6 2.2 µF Capacitor, Tantalum U1 HMC594LC3B Amplifier PCB [2] 109710 Evaluation PCB, 10 mils [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 [1] The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6