INFINEON SPN01N60S5

SPN01N60S5
Preliminary data
Cool MOS
Power-Transistor
COOLMOS
New revolutionary high voltage technology
Power Semiconductors
Ultra low gate charge
Product Summary
Extreme dv/dt rated
VDS @ Tjmax
Optimized capacitances
RDS(on)
Improved noise immunity
ID
650
V
6
0.3
A
SOT-223
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Type
Package
Ordering Code
Marking
SPN01N60S5
SOT-223
Q67040-S4208
01N60S5
ÊÐÍðëïêí
D,2/4
G,1
S,3
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Value
Unit
A
TA = 25 °C
0.3
TA = 70 °C
0.2
ID puls
1.6
dv/dt
6
kV/µs
Gate source voltage
VGS
20
V
Power dissipation
Ptot
1.8
W
-55... +150
°C
Pulsed drain current
1)
TA = 25 °C
Reverse diode dv/dt
IS = 0.3 A, VDS <VDSS , di/dt = 100 A/µs,
Tjmax = 150 °C
TA = 25 °C
Operating and storage temperature
Tj , Tstg
1
2001-07-25
SPN01N60S5
Preliminary data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
35
-
Thermal Characteristics
Thermal resistance, junction - soldering point
RthJS
SMD version, device on PCB:
RthJA
K/W
K/W
@ min. footprint
-
110
-
@ 6 cm2 cooling area 2)
-
-
72
Static Characteristics, at Tj = 25 °C, unless otherwise specified
V(BR)DSS
600
-
-
Gate threshold voltage, VGS = VDS
ID = 250 µA, Tj = 25 °C
VGS(th)
2.3
3
3.7
Zero gate voltage drain current, VDS=VDSS
IDSS
Drain-source breakdown voltage
V
VGS = 0 V, ID = 0.25 mA
µA
VGS = 0 V, Tj = 25 °C
-
0.5
1
VGS = 0 V, Tj = 150 °C
-
-
50
IGSS
-
-
100
RDS(on)
-
5.5
6
Gate-source leakage current
nA
VGS = 20 V, VDS = 0 V
Drain-source on-state resistance
VGS = 10 V, ID = 0.2 A
1current limited by T
jmax
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm² (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
2
2001-07-25
SPN01N60S5
Preliminary data
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
-
0.45
-
S
pF
Dynamic Characteristics
Transconductance
gfs
VDS 2*ID *RDS(on)max ,
ID =0.2A
Input capacitance
Ciss
VGS =0V, VDS =25V,
-
100
-
Output capacitance
Coss
f=1MHz
-
40
-
Reverse transfer capacitance
Crss
-
2.5
-
Turn-on delay time
td(on)
VDD =350V, VGS =10V,
-
45
Rise time
tr
ID =0.3A, RG=100
-
30
-
Turn-off delay time
td(off)
-
60
90
Fall time
tf
-
30
45
-
0.9
-
-
2.2
-
-
3.9
5
-
-
0.3
-
-
1.6
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Total gate charge
Qg
VDD =350V, ID =0.3A
VDD =350V, ID =0.3A,
nC
VGS =0 to 10V
Reverse Diode
Inverse diode continuous
IS
TC=25°C
A
forward current
Inverse diode direct
ISM
current,pulsed
Inverse diode forward voltage
VSD
VGS =0V, IF =0.3A
-
0.85
1.05
V
Reverse recovery time
trr
VR =100V, IF=lS,
-
200
340
ns
Reverse recovery charge
Qrr
diF /dt=100A/µs
-
0.45
-
µC
3
2001-07-25
SPN01N60S5
Preliminary data
Power Dissipation
Drain current
Ptot = f (TA )
ID = f (TA )
parameter: VGS 10 V
1.9
W
SPN01N60S5
0.32
SPN01N60S5
A
1.6
0.24
1.2
ID
Ptot
1.4
1
0.2
0.16
0.8
0.12
0.6
0.08
0.4
0.04
0.2
0
0
20
40
60
80
100
120
°C
0
0
160
20
40
60
80
100
120
°C
TA
TA
Safe operating area
Transient thermal impedance
ID =f (VDS)
ZthJA = f (tp )
parameter: D=0.01, TC =25°C
parameter : D = tp /T
10
160
1 SPN01N60S5
10 2
A
SPN01N60S5
K/W
tp = 16.0µs
10 1
Z thJA
10 0
ID
100 µs
10 -1
10 0
1 ms
D = 0.50
0.20
single pulse
10 ms
0.10
10 -2
0.05
10 -1
0.02
0.01
DC
10 -3 0
10
10
1
10
2
V
10
10 -2 -5
-4
-3
10 10 10 10
3
VDS
-2
10
-1
10
0
10
1
10
2
s
10
4
tp
4
2001-07-25
SPN01N60S5
Preliminary data
Typ. output characteristic
Drain-source on-resistance
ID = f (VDS)
RDS(on) = f (Tj )
Parameter: VGS , Tj = 25 °C
parameter : ID = 0.2 A, VGS = 10 V
2.5
15
20V
10V
98%
A
7V
R DS(on)
12
ID
6.5V
1.5
typ.
11
10
9
8
6V
7
1
6
5
5.5V
4
0.5
3
5V
2
1
0
0
5
10
15
0
-60
25
V
-20
20
60
100
°C
VDS
180
Tj
Typ. transfer characteristics
Typ. capacitances
ID = f ( VGS )
C = f (VDS)
VDS 2 x ID x RDS(on)max
parameter: VGS =0 V, f=1 MHz
10 3
2.5
pF
A
Ciss
C
ID
10 2
1.5
Coss
1
10 1
0.5
Crss
0
0
4
8
12
10 0
0
20
VGS
V
5
10
20
30
40
50
60
70
80
V 100
VDS
2001-07-25
SPN01N60S5
Preliminary data
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS = f (Tj )
VGS(th) = f (Tj)
parameter: VGS = VDS , ID = 250 µA
SPN01N60S5
5
720
V
V
V GS(th)
V(BR)DSS
4
680
660
3.5
3
98%
640
2.5
620
typ.
2
600
1.5
580
2%
1
560
0.5
540
-60
-20
20
60
100
°C
0
-60
180
-20
20
60
°C
100
Tj
Tj
Forward characteristics of reverse diode
Typ. gate charge
IF = f (VSD )
VGS = f (QGate)
parameter: Tj , tp = 10 µs
parameter: ID = 0.3 A pulsed
10
180
1 SPN01N60S5
16
SPN01N60S5
V
A
12
IF
V GS
10 0
0,2 VDS max
10
0,8 VDS max
8
6
10 -1
T j = 25 °C typ
4
T j = 150 °C typ
T j = 25 °C (98%)
2
T j = 150 °C (98%)
10 -2
0
0.4
0.8
1.2
1.6
2
2.4
V
0
0
3
VSD
6
1
2
3
4
nC
Qg
5.5
2001-07-25
SPN01N60S5
Preliminary data
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7
2001-07-25
Preliminary data
SPN01N60S5
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
8
2001-07-25