SPN01N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS New revolutionary high voltage technology Power Semiconductors Ultra low gate charge Product Summary Extreme dv/dt rated VDS @ Tjmax Optimized capacitances RDS(on) Improved noise immunity ID 650 V 6 0.3 A SOT-223 ì í î ï Type Package Ordering Code Marking SPN01N60S5 SOT-223 Q67040-S4208 01N60S5 ÊÐÍðëïêí D,2/4 G,1 S,3 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA = 25 °C 0.3 TA = 70 °C 0.2 ID puls 1.6 dv/dt 6 kV/µs Gate source voltage VGS 20 V Power dissipation Ptot 1.8 W -55... +150 °C Pulsed drain current 1) TA = 25 °C Reverse diode dv/dt IS = 0.3 A, VDS <VDSS , di/dt = 100 A/µs, Tjmax = 150 °C TA = 25 °C Operating and storage temperature Tj , Tstg 1 2001-07-25 SPN01N60S5 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. - 35 - Thermal Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA K/W K/W @ min. footprint - 110 - @ 6 cm2 cooling area 2) - - 72 Static Characteristics, at Tj = 25 °C, unless otherwise specified V(BR)DSS 600 - - Gate threshold voltage, VGS = VDS ID = 250 µA, Tj = 25 °C VGS(th) 2.3 3 3.7 Zero gate voltage drain current, VDS=VDSS IDSS Drain-source breakdown voltage V VGS = 0 V, ID = 0.25 mA µA VGS = 0 V, Tj = 25 °C - 0.5 1 VGS = 0 V, Tj = 150 °C - - 50 IGSS - - 100 RDS(on) - 5.5 6 Gate-source leakage current nA VGS = 20 V, VDS = 0 V Drain-source on-state resistance VGS = 10 V, ID = 0.2 A 1current limited by T jmax 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm² (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. 2 2001-07-25 SPN01N60S5 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 0.45 - S pF Dynamic Characteristics Transconductance gfs VDS 2*ID *RDS(on)max , ID =0.2A Input capacitance Ciss VGS =0V, VDS =25V, - 100 - Output capacitance Coss f=1MHz - 40 - Reverse transfer capacitance Crss - 2.5 - Turn-on delay time td(on) VDD =350V, VGS =10V, - 45 Rise time tr ID =0.3A, RG=100 - 30 - Turn-off delay time td(off) - 60 90 Fall time tf - 30 45 - 0.9 - - 2.2 - - 3.9 5 - - 0.3 - - 1.6 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Total gate charge Qg VDD =350V, ID =0.3A VDD =350V, ID =0.3A, nC VGS =0 to 10V Reverse Diode Inverse diode continuous IS TC=25°C A forward current Inverse diode direct ISM current,pulsed Inverse diode forward voltage VSD VGS =0V, IF =0.3A - 0.85 1.05 V Reverse recovery time trr VR =100V, IF=lS, - 200 340 ns Reverse recovery charge Qrr diF /dt=100A/µs - 0.45 - µC 3 2001-07-25 SPN01N60S5 Preliminary data Power Dissipation Drain current Ptot = f (TA ) ID = f (TA ) parameter: VGS 10 V 1.9 W SPN01N60S5 0.32 SPN01N60S5 A 1.6 0.24 1.2 ID Ptot 1.4 1 0.2 0.16 0.8 0.12 0.6 0.08 0.4 0.04 0.2 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 °C TA TA Safe operating area Transient thermal impedance ID =f (VDS) ZthJA = f (tp ) parameter: D=0.01, TC =25°C parameter : D = tp /T 10 160 1 SPN01N60S5 10 2 A SPN01N60S5 K/W tp = 16.0µs 10 1 Z thJA 10 0 ID 100 µs 10 -1 10 0 1 ms D = 0.50 0.20 single pulse 10 ms 0.10 10 -2 0.05 10 -1 0.02 0.01 DC 10 -3 0 10 10 1 10 2 V 10 10 -2 -5 -4 -3 10 10 10 10 3 VDS -2 10 -1 10 0 10 1 10 2 s 10 4 tp 4 2001-07-25 SPN01N60S5 Preliminary data Typ. output characteristic Drain-source on-resistance ID = f (VDS) RDS(on) = f (Tj ) Parameter: VGS , Tj = 25 °C parameter : ID = 0.2 A, VGS = 10 V 2.5 15 20V 10V 98% A 7V R DS(on) 12 ID 6.5V 1.5 typ. 11 10 9 8 6V 7 1 6 5 5.5V 4 0.5 3 5V 2 1 0 0 5 10 15 0 -60 25 V -20 20 60 100 °C VDS 180 Tj Typ. transfer characteristics Typ. capacitances ID = f ( VGS ) C = f (VDS) VDS 2 x ID x RDS(on)max parameter: VGS =0 V, f=1 MHz 10 3 2.5 pF A Ciss C ID 10 2 1.5 Coss 1 10 1 0.5 Crss 0 0 4 8 12 10 0 0 20 VGS V 5 10 20 30 40 50 60 70 80 V 100 VDS 2001-07-25 SPN01N60S5 Preliminary data Drain-source breakdown voltage Gate threshold voltage V(BR)DSS = f (Tj ) VGS(th) = f (Tj) parameter: VGS = VDS , ID = 250 µA SPN01N60S5 5 720 V V V GS(th) V(BR)DSS 4 680 660 3.5 3 98% 640 2.5 620 typ. 2 600 1.5 580 2% 1 560 0.5 540 -60 -20 20 60 100 °C 0 -60 180 -20 20 60 °C 100 Tj Tj Forward characteristics of reverse diode Typ. gate charge IF = f (VSD ) VGS = f (QGate) parameter: Tj , tp = 10 µs parameter: ID = 0.3 A pulsed 10 180 1 SPN01N60S5 16 SPN01N60S5 V A 12 IF V GS 10 0 0,2 VDS max 10 0,8 VDS max 8 6 10 -1 T j = 25 °C typ 4 T j = 150 °C typ T j = 25 °C (98%) 2 T j = 150 °C (98%) 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 0 0 3 VSD 6 1 2 3 4 nC Qg 5.5 2001-07-25 SPN01N60S5 Preliminary data ïòê oðòï êòë oðòî ß ðòï ³¿¨ í oðòï Þ ì õðòî ¿½½ò ¬± Ü×Ò êéèì ï î í îòí ðòé oðòï ìòê ðòîë Ó ß ðòîë Ó Þ ÙÐÍðëëêð 7 2001-07-25 Preliminary data SPN01N60S5 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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