BSO201SP Preliminary data OptiMOS-P Small-Signal-Transistor Product Summary Feature VDS • P-Channel RDS(on) • Enhancement mode ID • Super Logic Level (2.5 V rated) -20 V 8 mΩ -14.9 A • 150°C operating temperature • Avalanche rated S 1 8 D • dv/dt rated S 2 7 D S 3 6 D G 4 5 D Top View Type Package Ordering Code BSO201SP SO 8 Q67042-S4071 SIS00062 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TA=25°C -14.9 TA=70°C -11.9 Pulsed drain current ID puls Unit -59.6 TA=25°C EAS 248 dv/dt -6 Gate source voltage VGS ±12 V Power dissipation Ptot 2.5 W -55... +150 °C Avalanche energy, single pulse mJ ID =-14.9 A , VDD =-10V, RGS =25Ω Reverse diode dv/dt kV/µs IS =-14.9A, VDS =-16V, di/dt=200A/µs, Tjmax =150°C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2001-12-21 BSO201SP Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 35 @ min. footprint, t < 10s - - 110 @ 6 cm 2 cooling area - - 50 Characteristics Thermal resistance, junction - soldering point RthJS SMD version, device on PCB: RthJA 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS -20 - - VGS(th) -0.6 -0.9 -1.2 Static Characteristics Drain-source breakdown voltage V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS ID =-250µA Zero gate voltage drain current µA IDSS VDS =-20V, VGS =0, Tj =25°C - -0.1 -1 VDS =-20V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 9.8 12.9 mΩ RDS(on) - 7.2 8 Gate-source leakage current VGS =-12V, VDS =0 Drain-source on-state resistance VGS =-2.5V, ID =-11.9A Drain-source on-state resistance VGS =-4.5, ID =-14.9A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec. Page 2 2001-12-21 BSO201SP Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 32 64 - S pF Dynamic Characteristics Transconductance gfs çVDS ç≥2*çIDç*RDS(on)max ID =-11.9A Input capacitance Ciss VGS =0, VDS =-15V, - 5962 - Output capacitance Coss f=1MHz - 2168 - Reverse transfer capacitance Crss - 781 - Turn-on delay time td(on) VDD =-10V, VGS =-4.5V, - 21.3 32 Rise time tr ID =-1A, RG=6Ω - 39.7 60 Turn-off delay time td(off) - 108.5 163 Fall time tf - 127 190 - -9.7 - -39.6 -59 - -85.5 -128 V(plateau) VDD =-15V, ID =-14.9A - -1.6 - V IS - - -3.7 A - - -59.6 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-15V, ID =-14.9A VDD =-15V, ID =-14.9A, -14.5 nC VGS =0 to -4.5V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0, |IF | = |ID | - -0.8 -1.2 V Reverse recovery time trr VR =-10V, |IF | = |lD |, - 62 77 ns Reverse recovery charge Qrr diF /dt=100A/µs - 43 54 nC Page 3 2001-12-21 BSO201SP Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS |≥ 4.5 V BSO201SP -16 2.8 BSO201SP W A 2.4 2.2 -12 1.8 ID Ptot 2 -10 1.6 -8 1.4 1.2 -6 1 0.8 -4 0.6 0.4 -2 0.2 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TA ID = f ( VDS ) ZthJS = f (tp) parameter : D = 0 , TA = 25 °C parameter : D = t p/T D 3 Transient thermal impedance V 10 2 = BSO201SP 160 TA 4 Safe operating area BSO201SP K/W on ) -10 2 °C R DS ( tp = 120.0µs 10 1 A 10 0 ZthJS 1 ms ID -10 1 10 ms 10 -1 D = 0.50 10 -2 0.20 0.10 -10 0 10 -3 0.05 0.02 single pulse 0.01 10 -4 -10 -1 -1 -10 -10 0 DC 1 -10 V -10 2 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp VDS Page 4 2001-12-21 0 BSO201SP Preliminary data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 0.05 90 Ω A Vgs = -2.5V 0.04 Vgs = -3V Vgs = -4V Vgs = -4.5V Vgs = -10V 60 RDS(on) - ID 70 0.035 0.03 50 Vgs = -2.2V Vgs = - 2.2V Vgs = - 2.5V Vgs = - 3V Vgs = - 4.5V Vgs = - 10V 0.025 40 0.02 30 0.015 20 0.01 Vgs = -1.8V 10 0 0 0.005 1 2 3 4 5 6 7 8 V 0 0 10 10 20 30 40 50 60 70 - V DS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS |≥ 2 x |ID| x RDS(on)max gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: tp = 80 µs 35 A 90 - ID 120 S A 100 90 - ID g fs 25 80 70 20 60 15 50 40 10 30 20 5 10 0 0 0.5 1 1.5 V 2.5 - V GS Page 5 0 0 5 10 15 20 25 30 40 A - ID 2001-12-21 BSO201SP Preliminary data 9 Drain-source on-resistance 10 Gate threshold voltage RDS(on) = f(Tj ) VGS(th) = f (Tj) parameter: ID = -14.9 A, VGS = -4.5 V parameter: VGS = VDS , ID = -250 µA 12 1.6 V - VGS(th) RDS(on) mΩ 10 98% 1.2 98% 1 9 0.8 typ. 8 0.6 typ. 7 0.4 6 5 -60 2% 0.2 -20 20 60 100 0 -60 °C 160 Tj -20 20 60 100 °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz parameter: Tj , tp = 80 µs 10 4 -10 2 BSO201SP A Ciss C IF -10 1 pF Coss -10 0 Tj = 25 °C typ Tj = 150 °C typ Crss Tj = 25 °C (98%) Tj = 150 °C (98%) 10 3 0 5 10 V 20 - VDS -10 -1 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2001-12-21 BSO201SP Preliminary data 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ), par.: ID = -14.9 A |VGS| = f (QGate ) VDD = -10 V, RGS = 25 Ω parameter: ID = -14.9 A pulsed 250 12 V - VGS E AS mJ 150 8 6 0.2 VDS max. 0.5 VDS max. 0.8 VDS max. 100 4 50 2 0 25 50 75 100 150 °C Tj 0 0 20 40 60 80 100 nC 140 |QGate| 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) -24.5 BSO201SP V V (BR)DSS -23.5 -23 -22.5 -22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60 -20 20 60 100 °C 180 Tj Page 7 2001-12-21 Preliminary data BSO201SP Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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