BAT 68W Silicon Schottky Diodes Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching BAT 68-04W BAT68-05W BAT68-06W Type Marking Ordering Code Pin Configuration Package BAT 68-04W 84s Q62702- 1 = A1 2 = K2 3 = K1/A2 SOT-323 BAT 68-05W 85s Q62702- 1 = A1 2 = A2 3 = K1/K2 SOT-323 BAT 68-06W 86s Q62702- 1 = K1 2 = K2 3 = A1/A2 SOT-323 BAT 68W 83s Q62702- 1=A n.c. 3=K SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 8 V Forward current IF 130 mA Ptot 150 mW Total power dissipation, BAW68-04...06W TS=92°C Ptot Junction temperature Tj 150 Total power dissipation, BAT68W TS=97°C Values Unit 150 °C Operating temperature range Top - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - ambient, BAT68W RthJA ≤ 435 Junction - ambient, BAT68-04W...06W RthJA ≤ 550 Junctui - soldering point, BAT68W RthJS ≤ 355 Junction - soldering point, BAT68-04W...06W RthJS 390 Semiconductor Group 1 K/W Dec-20-1996 BAT 68W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. Unit typ. max. DC characteristics V(BR) Breakdown voltage V I(BR) = 100 µA 8 - - IR Reverse current µA VR = 1 V, TA = 25 °C - - 0.1 VR = 1 V, TA = 60 °C - - 1.2 VF Forward voltage mV IF = 1 mA - 318 340 IF = 10 mA 340 390 500 CT Diode capacitance pF VR = 1 V, f = 1 MHz - - 1 Ω RF Differential forward resistance IF = 5 mA - Forward current IF = f (TA*;TS) - 10 Forward current IF = f (TA*;TS) *): mounted on alumina 15mm x 16.7mm x 0.7mm *): mounted on alumina 15mm x 16.7mm x 0.7mm BAT 68W IF BAT 68-04W, -05W, -06W 200 200 mA mA 160 IF 140 160 140 120 120 TS TA 100 80 80 60 60 40 40 20 20 0 TS TA 100 0 0 20 40 60 Semiconductor Group 80 100 120 °C 150 TA ,TS 2 0 20 40 60 80 100 120 °C 150 TA ,TS Dec-20-1996 BAT 68W Permissible Pulse Load RTHJS = f(tp) BAT 68W Permissible Pulse Load IFmax/IFDC = f(tp) BAT 68W 10 2 10 3 K/W RthJS IFmax/IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Permissible Pulse Load RTHJS = f(tp) BAT 68-04W, -05W, -06W 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Permissible Pulse Load IFmax/IFDC = f(tp) BAT 68-04W, -05W, -06W 10 2 10 3 K/W RthJS IFmax/IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 3 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-20-1996 BAT 68W Diode capacitance CT = f (VR) f = 1MHz Differential forward resistance rf = f(IF) f = 10kHz Forward Current IF = f(VF) Reverse current IR = f (TA) VR = 28V Semiconductor Group 4 Dec-20-1996