INFINEON PTFA220041M

PTFA220041M
Confidential, Limited Internal Distribution
High Power RF LDMOS Field Effect Transistor
4 W, 700 – 2200 MHz
Description
The PTFA220041M is an unmatched 4-watt LDMOS FET intended
for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency
and linearity performance in a small, overmolded plastic package.
Features
Two-tone Drive-up
• Typical two-carrier WCDMA performance,
1842 MHz, 8 dB PAR
- POUT = 27 dBm Avg
- ACPR = –44 dBc
21
60
20
50
Gain
19
40
18
30
Efficiency (%)
Gain (dB)
VDD = 28 V, IDQ = 50 mA,
ƒ1 = 1841.9 M Hz, ƒ2 = 1842 M Hz
Efficiency
17
34
35
36
37
38
• Typical CW performance, 1842 MHz, 28 V
- POUT = 37 dBm
- Efficiency = 53.5%
- Gain = 17.9 dB
• Typical CW performance, 940 MHz, 28 V
- POUT = 37.5 dBm
- Efficiency = 57%
- Gain = 19.7 dB
• Capable of handling 10:1 VSWR @ 28 V, 5 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 2 (minimum)
20
33
PTFA220041M
Package PG-SON-10
39
• Excellent thermal stability
Output Power, PEP (dBm)
• Pb-free and RoHS compliant
Two-tone Measurements (not subject to production test - verified by design / characterization in Infineon test fixture)
VDD = 28 V, IDQ = 50 mA, POUT = 4 W PEP, ƒ = 1842 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
18.5
19
—
dB
Drain Efficiency hD
35
37.5
—
%
Intermodulation Distortion
IMD
—
–29
–28
dBc
Input Return Loss
IRL
—
–8
–7
dB
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (not subject to production test - verified by design / characterization in Infineon test fixture)
VDD = 28 V, IDQ = 50 mA, POUT = 5 W PEP, ƒ = 940 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
18.5
—
dB
Drain Efficiency hD
—
37
—
%
Intermodulation Distortion
IMD
—
–30
—
dBc
Input Return Loss
IRL
—
–10
—
dB
DC Characteristics
Characteristic Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 µA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
µA
On-State Resistance VGS = 10 V, VDS = 0.1 A
RDS(on)
—
2.01
—
W
Operating Gate Voltage
VDS = 28 V, IDQ = 50 mA
VGS
2.0
2.5
3.0
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage VDSS
65
V
Gate-Source Voltage VGS
–0.5 to +12
V
Junction Temperature
TJ
175
°C
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C, 5 W CW)
RqJC
5.5
°C/W
Moisture Sensitivity Level
Level
Test Standard
Package Temperature
3
IPC/JEDEC J-STD-020
260
Unit
°C
Ordering Information
Type and Version
Package Outline
Package Description
Shipping
PTFA220041M V4
PG-SON-10
Molded plastic, SMD
Tape & Reel, 500 pcs
Data Sheet 2 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Typical Performance, 1842 MHz (data taken in Infineon test fixture)
Two-carrier WCDMA 3GPP Drive-up
Two-carrier WCDMA 3GPP
VDD = 28 V, IDQ = 50 mA, 3GPP WCDMA,
PAR = 8.0 dB, 10 MHz carrier spacing,
BW 3.84 MHz
VDD = 28 V, IDQ = 50 mA, ƒ = 1842 MHz, 3GPP
WCDMA, PAR = 8.0 dB, 10 MHz carrier spacing,
BW 3.84 MHz
Gain
-20
40
30
17
20
Efficiency
10
16
27
29
31
33
-35
ACPR
-40
-50
25
35
27
-20
50
20
40
19
30
Efficiency
20
IMD Low
10
ACPR
25
27
29
31
55
45
Efficiency
17
35
25
15
15
30
35
Output Power (dBm)
Data Sheet Gain
16
0
33
65
18
Gain (dB)
IMD Up
-50
35
VDD = 28 V, IDQ = 50 mA, ƒ = 1842 MHz
Drain Efficiency (%)
IMD & ACPR (dBc)
0
-40
33
Power Sweep, CW
Gain & Efficiency vs. Output Power
Two-carrier WCDMA 3GPP Drive-up
VDD = 28 V, IDQ = 50 mA, ƒ = 1842 MHz, 3GPP
WCDMA, PAR = 8.0 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-30
31
Output Power (dBm)
Output Power (dBm)
-10
29
Drain Efficiency (%)
25
IM3 Upper
-30
-45
0
15
IM3 Lower
-25
IMD (dBc)
18
Drain Efficiency (%)
19
Gain (dB)
-15
50
20
31
32
33
34
35
36
37
38
Output Power (dBm)
3 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Typical Performance, 1842 MHz (cont.)
Two-tone Drive-up
Two-tone Gain vs. Output Power
VDD = 28 V, IDQ = 50 mA,
ƒ1 = 1841.9 MHz, ƒ2 = 1842 MHz
VDD = 28 V, ƒ1 = 1841.9 MHz, ƒ2 = 1842 MHz
-15
70
60
50
-30
40
Efficiency
-35
30
-40
20
IDQ = 63 mA
19.0
Power Gain (dB)
IMD3
-25
IDQ = 75 mA
19.5
Efficiency (%)
IMD (dBc)
-20
20.0
IDQ = 50 mA
18.5
18.0
IDQ = 25 mA
17.5
17.0
16.5
34
35
36
37
38
16.0
39
33
37
38
Two-tone Broadband
Gain, Efficiency & RL vs. Frequency
Small Signal CW
Gain & Input Return Loss
5
-5
50
Efficiency
-15
40
-25
30
-35
IMD3
Gain
20
-45
10
20
1800
1840
1880
1920
-2.0
Gain
16
-4.0
14
-6.0
IRL
12
-8.0
10
-55
1760
0.0
18
Power Gain (dB)
RL
60
39
VDD = 28 V, IDQ = 50 mA
Return Loss (dB), IMD (dBc)
Gain / Efficiency (dB / %)
36
Output Power (dBm)
70
-10.0
1692
1960
1792
1892
1992
Frequency (MHz)
Frequency (MHz)
Data Sheet 35
Output Power, PEP (dBm)
VDD = 28V, IDQ = 50 mA, avg POUT = 2 W,
tone spacing = 100 kHz
1720
34
Input Return Loss (dB)
33
4 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Typical Performance, 1842 MHz (cont.)
CW Performance
Gain & Efficiency vs. Output Power & VDD
CW Performance
Gain & Efficiency vs. Output Power
IDQ = 50 mA, ƒ = 1842 MHz
VDD = 28 V, IDQ = 50 mA, ƒ = 1842 MHz
60
40
18.5
30
18.0
20
VDD = 32 V
VDD = 28 V
VDD = 24 V
Efficiency
10
0
26
28
30
32
50
18
40
16
Efficiency
17.0
24
Gain
20
Gain (dB)
19.0
17.5
60
50
Gain
Efficiency (%)
Power Gain (dB)
19.5
22
34
36
+85°C
+25°C
–30°C
30
14
38
Drain Efficiency (%)
20.0
20
30
31
32
33
34
35
36
37
Output Power (dBm)
Output Power (dBm)
Intermodulation Distortion
vs. Tone Spacing
Intermodulation Distortion
vs. Output Power
VDD = 28 V, IDQ = 50 mA, ƒ = 1842 MHz,
POUT (PEP) = 4 W
38
VDD = 28 V, IDQ = 50 mA,
ƒ1 = 1841.9 MHz, ƒ2 = 1842 MHz
-10
-10
3rd Order
-20
-20
IMD (dBc)
IMD (dBc)
3rd Order
-30
5th
-40
-50
7th
-30
5th
-40
-50
-60
7th
-60
0
20
40
60
80
100
32
Tone Spacing (MHz)
Data Sheet 34
36
38
40
Output Power, PEP (dBm)
5 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Broadband Circuit Impedance, 1842 MHz
Z Load W
R
jX
720
2.4
16.9
45.2
25.2
820
1.8
13.4
31.0
15.2
869
1.6
11.8
21.3
18.2
894
1.6
12.0
22.1
18.4
920
1.6
10.6
14.5
21.5
940
1.6
10.1
15.2
21.4
960
1.6
10.3
16.1
18.9
1805
2.1
3.2
6.8
12.1
1880
2.1
2.2
6.4
10.9
1930
1.8
1.3
6.3
10.6
1990
2.1
1.5
4.3
8.1
2110
2.5
2.0
4.9
8.4
2170
2.0
2.0
4.4
8.8
D
Z Source
Z Load
G
S
0 .15
0.10
0. 4 0
0. 35
1
jX
0.9
R
0. 8
MHz
0.
5
0. 6
0. 7
Z Source W
Frequency
45
0.
0
5
4
0.
Z Source
0.
3
R -->
0.
720 MHz
Z Load
RD G
E NE
RA T
O
0. 2
S T OW
A
2170 MHz
720 MHz
0 .1
Data Sheet 0.1
6 of 18
2
0.5
0.4
0.3
0.2
0.1
0.0
2170 MHz
W ARD LOA D T HS T O
L E NG
- W AV E LE NGT H
Z0 = 50 Ω
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Reference Circuit, 1842 MHz
VDD
28 V
R804
2000 Ohm
TL103
TL107
1
S2
R805
10 Ohm S3
TL105
TL101
3
2
C803
1000000 pF
4
R803
500 Ohm
In
2
1
Out
NC
NC
3
6
7
2
C
3
E
4
1
B
R802
1300 Ohm
R102
10 Ohm
TL118
C101
6.2 pF
2
C105
7.5 pF
C104
7.5 pF
TL116
TL113
TL102
TL117
3
1
TL114
2
3
1
5
C802
1000000 pF
TL110
2
  �          �     �  �  �  
TL111
3
1
1
TL109
C103
12 pF
S4
TL108
RF_IN
2
3
4
4
Er=3.48
H=20 mil
RO/RO4350B1
DCVS
V1
R801
1200 Ohm
TL106
GATE DUT
4
3
L1
22 nH
TL104
S5
8
C801
1000000 pF
4
TL115
TL112
C107
7.5 pF
C106
7.5 pF
C102
4.7 pF
Reference circuit input schematic for ƒ = 1842 MHz
TL225 TL224 TL226 TL216
TL215
TL201
TL214
C204
100000 pF
C205
12 pF
TL206
TL223
C206
2200000 pF
TL207
TL205
3
2
1
2
TL211 TL202
3
2
1
1
VDD
28 V
3
2
1
3
TL203
L2
22 nH
TL204
TL212
TL210
DRAIN DUT
TL208
2
TL209
3
TL213
TL222
1
1
TL221
1
2
� � �    � �� � � � �    � � � �� � �� �  
TL219
1
C203
4.7 pF
2
3
3
3
C202
4.7 pF
2
TL220
TL217
C207
12 pF
TL218
RF_OUT
C201
3.6 pF
Reference circuit output schematic for ƒ = 1842 MHz
Data Sheet 7 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Reference Circuit, 1842 MHz (cont.)
Electrical Characteristics at 1842 MHz
Transmission
Electrical Line
Characteristics Dimensions: mm Dimensions: mils
Input
TL101
0.005 λ, 41.75 W W = 1.524, L = 0.508
W = 60, L = 20
TL102
0.021 λ, 51.98 W W = 1.087, L = 2.108
W = 43, L = 83
W = 1.524 W = 60
TL103
TL104
0.019 λ, 25.04 W W = 3.048, L = 1.778
W = 120, L = 70
TL105
0.052 λ, 41.75 W W = 1.524, L = 5.08
W = 60, L = 200
TL106
0.013 λ, 41.75 W W = 1.524, L = 1.27
W = 60, L = 50
TL107
0.015 λ, 54.17 W W = 1.016, L = 1.524
W = 40, L = 60
TL108
0.033 λ, 51.98 W W = 1.087, L = 3.264
W = 43, L = 129 TL109
0.149 λ, 51.98 W W = 1.087, L = 14.681
W = 43, L = 578
TL110
0.034 λ, 51.98 W W = 1.087, L = 3.378
W = 43, L = 133
TL111
0.008 λ, 51.98 W W1 = 1.087, W2 = 1.087, W3 = 0.813
W1 = 43, W2 = 43, W3 = 32
TL112, TL113, TL115, TL116
W = 0, L = 0
W = 0, L = 0
TL114, TL 117
W1 = 1.087, W2 = 0.813, W3 = 1.087
W4 = 0.813
W1 = 43, W2 = 32, W3 = 43,
W4 = 32
TL118
W1 = 3.048, W2 = 0.762, W3 = 3.048, W4 = 0.762
W1 = 120, W2 = 30, W3 = 120, W4 = 30
Output
TL201, TL225, TL226
W1 = 0.025, W2 = 0.025
W1 = 1, W2 = 1
TL202
0.013 λ, 41.75 W W1 = 1.524, W2 = 1.524, W3 = 1.27
W1 = 60, W2 = 60, W3 = 50
TL203
0.005 λ, 41.75 W W = 1.524, L = 0.508
W = 60, L = 20
TL204
0.016 λ, 41.75 W W = 1.524, L = 1.524 W = 60, L = 60
TL205
0.039 λ, 41.75 W W1 = 1.524, W2 = 1.524, W3 = 3.81
W1 = 60, W2 = 60, W3 = 150
TL206, TL207
0.016 λ, 41.75 W W1 = 1.524, W2 = 1.524, W3 = 1.524
W1 = 60, W2 = 60, W3 = 60
TL208
0.008 λ, 25.04 W W1 = 3.048, W2 = 3.048, W3 = 0.762
W1 = 120, W2 = 120, W3 = 30
W = 1.087, W2 = 3.048
W = 43, W2 = 120
TL209
TL210
0.019 λ, 25.04 W W = 3.048, L = 1.778
W = 120, L = 70
TL211
0.014 λ, 41.75 W W = 1.524, L = 1.346
W = 60, L = 53
TL212
0.013 λ, 63.89 W
W = 0.762, L = 1.27 W = 30, L = 50
TL213
0.031 λ, 51.98 W
W = 1.087, L = 3.073
W = 43, L = 121
TL214
0.163 λ, 47.12 W W = 1.27, L = 15.926 W = 50, L = 627
TL215
0.074 λ, 47.12 W
W = 1.27, L = 7.29 W = 50, L = 287
TL216
0.076 λ, 15.92 W
W = 5.283, L = 6.986
W = 208, L = 275
TL217
0.123 λ, 51.98 W W = 1.087, L = 12.103
W = 43, L = 477
TL218
0.033 λ, 51.98 W
W = 1.087, L = 3.264
W = 43, L = 129
TL219, TL221, TL222
0.008 λ, 51.98 W
W1 = 1.087, W2 = 1.087, W3 = 0.813
W1 = 43, W2 = 43, W3 = 32
TL220
0.060 λ, 51.98 W
W = 1.087, L = 5.867
W = 43, L = 231
TL223
0.016 λ, 41.75 W
W = 1.524, L = 1.524
W = 60, L = 60
TL224
0.149 λ, 47.12 W W = 1.27, L = 14.554
W = 50, L = 573
Table continued next page
Data Sheet 8 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Reference Circuit, 1842 MHz (cont.)
C801 R802 C803
VDD
802
R801
S5
S4
R804
R803
S3
S2
R805
C105
C104
C103
C205
C206
C204
L2
L1
DUT
C102
C101 R102
C106
C107
C202 C203
RO4350, .020
PTFA220041M
C201
C207
(73)
� � �    � �� � � � � � � � �� � �� �  
Reference circuit assembly diagram (not to scale)*
Data Sheet 9 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Reference Circuit, 1842 MHz (cont.)
Circuit Assembly Information
DUT
PTFA220041M LDMOS Transistor
PCB
LTN/PTFA220041M
0.508 mm [.020"] thick, er = 3.48
Rogers 4350, 1 oz. copper
Component Description
Suggested Manufacturer
P/N Chip capacitor, 6.2 pF
ATC
100A6R2CW150X
Input
C101
C102
Chip capacitor, 4.7 pF
ATC
100A4R7CW150X
C103
Chip capacitor, 12 pF
ATC
100A120JW150X
C104, C105, C106, C107
Chip capacitor, 7.5 pF
ATC
100A7R5CW150X
C801, C802, C803
Chip capacitor, 1.0 µF
Digi-Key
445-1411-2-ND
L1
Inductor, 22 nH
Coilcraft
0805HT-22NX_BG
R102, R805
Resistor, 10 W
Digi-Key
P10ECT-ND
R801
Resistor, 1200 W
Digi-Key
P1.2KECT-ND
R802
Resistor, 1300 W Digi-Key
P1.3KECT-ND
R803
Resistor, 500 W
Digi-Key
P500ECT-ND
R804
Resistor, 2000 W Digi-Key
P2.0KECT-ND
S2
EMI Suppression Capacitor
Murata
NFM18PS105R0J3
S3
Potentiometer, 2k W
Digi-Key
3224W-202ECT-ND
S4
Transistor Infineon Technologies
BCP56
S5
Voltage regulator National Semiconductor
LM7805
Chip capacitor, 3.6 pF
ATC
100A3R6CW150X
Output
C201
C202, C203
Chip capacitor, 4.7 pF
ATC
100A4R7CW150X
C204
Chip capacitor, 0.1 µF
Digi-Key
PCC104BCT-ND
C205, C207
Chip capacitor, 12 pF
ATC
100A120JW150X
C206
Chip capacitor, 2.2 µF
Digi-Key
445-1447-2-ND
L2
Inductor, 22 nH
Coilcraft
0805HT-22NX_BG
Data Sheet 10 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Typical Performance, 940 MHz
Power Sweep, CW
Gain & Efficiency vs. Output Power
Two-carrier WCDMA 3GPP
VDD = 28 V, IDQ = 50 mA, ƒ = 940 MHz, 3GPP
WCDMA, P/AR = 8:1, 10 MHz carrier spacing
BW 3.84 MHz
21
30
Efficiency
20
19
18
10
17
27
29
31
Output Power (dBm)
33
50
19
40
Efficiency
18
30
17
20
30
35
31
32
50
-15
45
Efficiency
40
-25
35
30
-30
IMD3
20
37
38
Gain
50
20
40
19
30
Efficiency
18
39
20
33
34
35
36
37
38
39
Output Power, PEP (dBm)
Output Power, PEP (dBm)
Data Sheet 38
25
-40
36
37
60
21
Gain (dB)
-10
35
36
22
Efficiency (%)
IMD (dBc)
55
34
35
VDD = 28 V, IDQ = 50 mA,
ƒ1 = 939.9 MHz, ƒ2 = 940 MHz
-5
33
34
Two-tone Drive-up
Two-tone Drive-up
-35
33
Output Power (dBm)
VDD = 28 V, IDQ = 50 mA,
ƒ1 = 939.9 MHz, ƒ2 = 940 MHz
-20
60
20
0
25
Gain
Drain Efficiency (%)
40
70
Efficiency (%)
Gain (dB)
20
22
Gain (dB)
Gain
21
50
Drain Efficiency (%)
22
VDD = 28 V, IDQ = 50 mA, ƒ = 940 MHz
11 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Typical Performance, 940 MHz (cont.)
CW
Gain & Efficiency vs. Output Power & VDD
Intermodulation Distortion
vs. Output Power
ƒ = 940 MHz
21.5
-10
Power Gain (dB)
IMD (dBc)
-20
3rd Order
-30
5th
-40
-50
21.0
50
20.5
40
20.0
30
19.5
20
19.0
7th
60
Gain
Efficiency
18.5
-60
32
34
36
24
38
26
28
Efficiency (%)
VDD = 28 V, IDQ = 50 mA,
ƒ1 = 939.9 MHz, ƒ2 = 940 MHz
VDD = 32 V
VDD = 28 V
VDD = 24 V
30
32
10
0
34
36
38
40
Output Power (dBm)
Output Power, PEP (dBm)
Small Signal CW
Gain & Input Return Loss
VDD = 28 V, IDQ = 50 mA
22
0
20
-5
18
-10
16
-15
IRL
14
-20
12
Input Return Loss (dB)
Power Gain (dB)
Gain
-25
790
890
990
1090
Frequency (MHz)
Data Sheet 12 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Reference Circuit, 940 MHz
  �    
28 V
TL112
TL113
TL115
3
1
2
S2
4
In
Out
2
1
NC
NC
3
6
7
5
C802
1000 pF
S3
DCVS
V1
3
4
R803
500 Ohm
L1
22 nH
�    �   �   �  
S5
8
C801
1000 pF
TL111
R805
10 Ohm
     �     �  
VDD
R804
2000 Ohm
C803
1000 pF
R801
1200 Ohm
2
C
3
E
4
1
B
R802
1300 Ohm
TL116
S4
R102
10 Ohm
TL104
C103
62 pF
TL105
RF_IN
TL107
2
TL102
TL106
2
1
TL103
1
2
3
3
C104
10 pF
Er=3.48
H=20 mil
RO/RO4350B1
R101
1.3 Ohm
TL110
TL101
TL114
3
1
1
GATE DUT
2
3
TL108
TL109
C101
16 pF
C102
22 pF
Reference circuit input schematic for ƒ = 940 MHz
TL202 TL201 TL212
TL205
TL206
TL211
TL204
C204
62 pF
C201
100000 pF
TL217
C202
2200000 pF
TL213 TL218
TL216
3
2
2
1
1
  �    
     �     �  
�    �   �   �  
2
TL203
TL222
3
1
VDD
3
2
1
28 V
3
TL214
L2
22 nH
TL215
TL223
TL221
DRAIN DUT
TL219
2
TL220
3
TL224
L3
4.3 nH
TL210
1
TL209
1
2
3
TL207
C205
62 pF
TL208
RF_OUT
C203
3.6 pF
Reference circuit output schematic for ƒ = 940 MHz
Data Sheet 13 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Reference Circuit, 940 MHz (cont.)
Electrical Characteristics at 940 MHz
Transmission
Electrical Line
Characteristics Dimensions: mm Dimensions: mils
Input
TL101
0.004 λ, 24.85 Ω W1 = 3.048, W2 = 3.048, W3 =0.762
W1 = 120, W2 = 120, W3 = 30
TL102, TL103
0.004 λ, 51.66 Ω W1 = 1.087, W2 = 1.087, W3 = 0.813
W1 = 43, W2 = 43, W3 = 32
TL104
0.017 λ, 51.66 Ω W = 1.087, L = 3.264
W = 43, L = 129
TL105
0.038 λ, 51.66 Ω W = 1.087, L = 7.341
W = 43, L = 289
TL106
0.047 λ, 51.66 Ω W = 1.087, L = 9.144
W = 43, L = 360
TL107
0.004 λ, 51.66 Ω W1 = 1.087, W2 = 1.087, W3 = 0.762, W1 = 43, W2 = 43, W3 = 30
TL108, TL109
0.000 λ, 144.28 Ω W = 0.025, L = 0.000
W = 1, L = 0
TL110
0.019 λ, 51.66 Ω W = 1.087, L = 3.734
W = 43, L = 147
TL111
W = 1.524
W = 60 TL112
0.008 λ, 53.85 Ω W = 1.016, L = 1.524
W = 40, L = 60
TL113
0.027 λ, 41.47 Ω W = 1.524, L = 5.080
W = 60, L = 200
TL114
0.010 λ, 24.85 Ω W = 3.048, L = 1.778
W = 120, L = 70
TL115
0.003 λ, 41.47 Ω W = 1.524, L = 0.508
W = 60, L = 20
TL116
0.007 λ, 41.47 Ω W = 1.524, L = 1.270
W = 60, L = 50
0.076 λ, 46.82 Ω W = 1.270, L = 14.554
W = 50, L = 573
Output
TL201
TL202
W1 = 0.025, W2 = 0.025
W1 = 1, W2 = 1
TL203
0.007 λ, 41.47 Ω W1 = 1.524, W2 = 1.524, W3 = 1.270 W1 = 60, W2 = 60, W3 = 50
TL204
0.083 λ, 46.82 Ω W = 1.270, L = 15.927
W = 50, L = 627
TL205
0.038 λ, 46.82 Ω W = 1.270, L = 7.290
W = 50, L = 287
TL206
0.039 λ, 15.79 Ω W = 5.283, L = 6.986
W = 208, L = 275
TL207
0.063 λ, 51.66 Ω W = 1.087, L = 12.103
W = 43, L = 477
TL208
0.017 λ, 51.66 Ω W = 1.087, L = 3.264
W = 43, L = 129
TL209
0.004 λ, 51.66 Ω W1 = 1.087, W2 = 1.087, W3 = 0.813
W1 = 43, W2 = 43, W3 = 32
TL210
0.046 λ, 51.66 Ω W =1.087, L = 8.852
W = 43, L = 349
W1 = 0.025, W2 = 0.025
W1 = 1, W2 = 1
TL211, TL212
TL213, TL215
0.008 λ, 41.47 Ω W = 1.524, L = 1.524
W = 60, L = 60
TL214
0.003 λ, 41.47 Ω
W = 1.524, L = 0.508
W = 60, L = 20
TL216
0.020 λ, 41.47 Ω
W1 = 1.524, W2 = 1.524, W3 = 3.810
W1 = 60, W2 = 60, W3 = 150
TL217, TL218
0.008 λ, 41.47 Ω
W1 = 1.524, W2 = 1.524, W3 = 1.524
W1 = 60, W2 = 60, W3 = 60
TL219
0.004 λ, 24.85 Ω
W1 = 3.048, W2 = 3.048, W3 = 0.762
W1 = 120, W2 = 120, W3 = 30
W1 = 1.087, W2 = 3.048
W1 = 43, W2 = 120
TL220
TL221
0.010 λ, 24.85 Ω
W = 3.048, L = 1.778
W = 120, L = 70
TL222
0.007 λ, 41.47 Ω
W = 1.524, L = 1.346
W = 60, L = 53
TL223
0.007 λ, 63.55 Ω
W = 0.762, L = 1.270
W = 30, L = 50
TL224
0.004 λ, 51.66 Ω
W = 1.087, L = 0.851
W = 43, L = 33
Table continued next page
Data Sheet 14 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Reference Circuit, 940 MHz (cont.)
VDD
C801 R802 C803
C802
S5
R801
S4
R804
S3
R803
R805
S2
C202
C201
C204
L2
L1
C103
DUT
C104
C101
R101 R102
C102
L3
RO4350, .020
PTFA220041M
C203
C205
(73)
� � �    � �� � � � � � � �  � � � � � � � � �� �  
Reference circuit assembly diagram (not to scale)*
Data Sheet 15 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Reference Circuit, 940 MHz (cont.)
Circuit Assembly Information
DUT
PTFA220041M LDMOS Transistor
PCB
LTN/PTFA220041M–9
0.508 mm [.020"] thick, er = 3.48
Rogers 4350, 1 oz. copper
Component Description
Suggested Manufacturer
P/N Input
C101
Chip capacitor, 16 pF
ATC
100A160JW150X
C102
Chip capacitor, 22 pF
ATC
100A220JW150X
C103
Chip capacitor, 62 pF
ATC
100A620JW150X
C104
Chip capacitor, 10 pF
ATC
100A100JW150X
C801, C802, C803
Chip capacitor, 1000 pF
Digi-Key PCC1772CT-ND
L1
Inductor, 22 nH
Coilcraft
0805HT-22NX_BG
R101
Resistor, 1.3 W
Digi-Key
P1.3ECT-ND
R102, R805
Resistor, 10 W
Digi-Key
P10ECT-ND
R801
Resistor, 1200 W
Digi-Key
P1.2KECT-ND
R802
Resistor, 1300 W
Digi-Key
P1.3KECT-ND
R803
Resistor, 500 W
Digi-Key
P5.0KECT-ND
R804
Resistor, 2000 W
Digi-Key
P2.0KECT-ND
S2
EMI Suppression Capacitor Murata NFM18PS105R0J3
S3
Potentiometer, 2k W
Digi-Key
3224W-202ECT-ND
S4
Transistor
Infineon Technologies BCP56
S5
Voltage Regulator National Semiconductor
LM7805
Output
C201
Chip capacitor, 0.1 µF
Digi-Key
PCC104BCT-ND
C202
Chip capacitor, 2.2 µF
Digi-Key
445-1447-2-ND
C203
Chip capacitor, 3.6 pF
ATC
100A3R6CW150X
C204, C205
Chip capacitor, 62 pF
ATC
100A620JW150X
L2
Inductor, 22 nH
Coilcraft
0805HT-22NX_BG
L3
Inductor, 4.3 nH
Coilcraft
0603CS-4N3X_BG
Data Sheet 16 of 18
Rev. 08, 2010-06-07
PTFA220041M
Confidential, Limited Internal Distribution
Package Outline Specifications
Package PG-SON-10
0.54
[.021] 2 PLACES
5X .320
[.0126] 2 PLACES
4.00
[.157]
6
7
8
9
10
.815
[.0321]
4.00
[.157]
2.97
[.117]
S
2.37
[.093]
5X .515
[.0203] 2 PLACES
INDEX
MARKING
5
4
3
2
1
4X 0.65
[.026] 2 PLACES
TOP VIEW
0.30
[.012]
INDEX
MARKING
3.40
[.134]
BOTTOM VIEW
0.38
[.015] BOTH SIDES
1.42
[.056]
PG-SON-10_po_02-19-2010
0.05 [.002]
SIDE VIEW
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.1 [.004] unless specified otherwise.
4. Package dimension: 4.00 mm x 4.00 mm x 1.42 mm.
5. Pins: S = source, 1 – 5 = gate, 6 – 10 = drain.
6. NiPdAu plating (gold top layer): 0.025 – 0.127 micron [1 – 5 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet 17 of 18
Rev. 08, 2010-06-07
PTFA220041M V4
Confidential, Limited Internal Distribution
Revision History:
2010-06-07
Previous Version: 2010-04-15, Data Sheet
Page
Subjects (major changes since last revision)
6
Updated broadband circuit impedance
Data Sheet
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Edition 2010-06-07
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
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including without limitation, warranties of non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest
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to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
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Data Sheet
18 of 18
Rev. 08, 2010-06-07