PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency and linearity performance in a small, overmolded plastic package. Features Two-tone Drive-up • Typical two-carrier WCDMA performance, 1842 MHz, 8 dB PAR - POUT = 27 dBm Avg - ACPR = –44 dBc 21 60 20 50 Gain 19 40 18 30 Efficiency (%) Gain (dB) VDD = 28 V, IDQ = 50 mA, ƒ1 = 1841.9 M Hz, ƒ2 = 1842 M Hz Efficiency 17 34 35 36 37 38 • Typical CW performance, 1842 MHz, 28 V - POUT = 37 dBm - Efficiency = 53.5% - Gain = 17.9 dB • Typical CW performance, 940 MHz, 28 V - POUT = 37.5 dBm - Efficiency = 57% - Gain = 19.7 dB • Capable of handling 10:1 VSWR @ 28 V, 5 W (CW) output power • Integrated ESD protection : Human Body Model, Class 2 (minimum) 20 33 PTFA220041M Package PG-SON-10 39 • Excellent thermal stability Output Power, PEP (dBm) • Pb-free and RoHS compliant Two-tone Measurements (not subject to production test - verified by design / characterization in Infineon test fixture) VDD = 28 V, IDQ = 50 mA, POUT = 4 W PEP, ƒ = 1842 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 18.5 19 — dB Drain Efficiency hD 35 37.5 — % Intermodulation Distortion IMD — –29 –28 dBc Input Return Loss IRL — –8 –7 dB All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 18 Rev. 08, 2010-06-07 PTFA220041M Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (not subject to production test - verified by design / characterization in Infineon test fixture) VDD = 28 V, IDQ = 50 mA, POUT = 5 W PEP, ƒ = 940 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps — 18.5 — dB Drain Efficiency hD — 37 — % Intermodulation Distortion IMD — –30 — dBc Input Return Loss IRL — –10 — dB DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 A RDS(on) — 2.01 — W Operating Gate Voltage VDS = 28 V, IDQ = 50 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 175 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 5 W CW) RqJC 5.5 °C/W Moisture Sensitivity Level Level Test Standard Package Temperature 3 IPC/JEDEC J-STD-020 260 Unit °C Ordering Information Type and Version Package Outline Package Description Shipping PTFA220041M V4 PG-SON-10 Molded plastic, SMD Tape & Reel, 500 pcs Data Sheet 2 of 18 Rev. 08, 2010-06-07 PTFA220041M Confidential, Limited Internal Distribution Typical Performance, 1842 MHz (data taken in Infineon test fixture) Two-carrier WCDMA 3GPP Drive-up Two-carrier WCDMA 3GPP VDD = 28 V, IDQ = 50 mA, 3GPP WCDMA, PAR = 8.0 dB, 10 MHz carrier spacing, BW 3.84 MHz VDD = 28 V, IDQ = 50 mA, ƒ = 1842 MHz, 3GPP WCDMA, PAR = 8.0 dB, 10 MHz carrier spacing, BW 3.84 MHz Gain -20 40 30 17 20 Efficiency 10 16 27 29 31 33 -35 ACPR -40 -50 25 35 27 -20 50 20 40 19 30 Efficiency 20 IMD Low 10 ACPR 25 27 29 31 55 45 Efficiency 17 35 25 15 15 30 35 Output Power (dBm) Data Sheet Gain 16 0 33 65 18 Gain (dB) IMD Up -50 35 VDD = 28 V, IDQ = 50 mA, ƒ = 1842 MHz Drain Efficiency (%) IMD & ACPR (dBc) 0 -40 33 Power Sweep, CW Gain & Efficiency vs. Output Power Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 50 mA, ƒ = 1842 MHz, 3GPP WCDMA, PAR = 8.0 dB, 10 MHz carrier spacing, BW 3.84 MHz -30 31 Output Power (dBm) Output Power (dBm) -10 29 Drain Efficiency (%) 25 IM3 Upper -30 -45 0 15 IM3 Lower -25 IMD (dBc) 18 Drain Efficiency (%) 19 Gain (dB) -15 50 20 31 32 33 34 35 36 37 38 Output Power (dBm) 3 of 18 Rev. 08, 2010-06-07 PTFA220041M Confidential, Limited Internal Distribution Typical Performance, 1842 MHz (cont.) Two-tone Drive-up Two-tone Gain vs. Output Power VDD = 28 V, IDQ = 50 mA, ƒ1 = 1841.9 MHz, ƒ2 = 1842 MHz VDD = 28 V, ƒ1 = 1841.9 MHz, ƒ2 = 1842 MHz -15 70 60 50 -30 40 Efficiency -35 30 -40 20 IDQ = 63 mA 19.0 Power Gain (dB) IMD3 -25 IDQ = 75 mA 19.5 Efficiency (%) IMD (dBc) -20 20.0 IDQ = 50 mA 18.5 18.0 IDQ = 25 mA 17.5 17.0 16.5 34 35 36 37 38 16.0 39 33 37 38 Two-tone Broadband Gain, Efficiency & RL vs. Frequency Small Signal CW Gain & Input Return Loss 5 -5 50 Efficiency -15 40 -25 30 -35 IMD3 Gain 20 -45 10 20 1800 1840 1880 1920 -2.0 Gain 16 -4.0 14 -6.0 IRL 12 -8.0 10 -55 1760 0.0 18 Power Gain (dB) RL 60 39 VDD = 28 V, IDQ = 50 mA Return Loss (dB), IMD (dBc) Gain / Efficiency (dB / %) 36 Output Power (dBm) 70 -10.0 1692 1960 1792 1892 1992 Frequency (MHz) Frequency (MHz) Data Sheet 35 Output Power, PEP (dBm) VDD = 28V, IDQ = 50 mA, avg POUT = 2 W, tone spacing = 100 kHz 1720 34 Input Return Loss (dB) 33 4 of 18 Rev. 08, 2010-06-07 PTFA220041M Confidential, Limited Internal Distribution Typical Performance, 1842 MHz (cont.) CW Performance Gain & Efficiency vs. Output Power & VDD CW Performance Gain & Efficiency vs. Output Power IDQ = 50 mA, ƒ = 1842 MHz VDD = 28 V, IDQ = 50 mA, ƒ = 1842 MHz 60 40 18.5 30 18.0 20 VDD = 32 V VDD = 28 V VDD = 24 V Efficiency 10 0 26 28 30 32 50 18 40 16 Efficiency 17.0 24 Gain 20 Gain (dB) 19.0 17.5 60 50 Gain Efficiency (%) Power Gain (dB) 19.5 22 34 36 +85°C +25°C –30°C 30 14 38 Drain Efficiency (%) 20.0 20 30 31 32 33 34 35 36 37 Output Power (dBm) Output Power (dBm) Intermodulation Distortion vs. Tone Spacing Intermodulation Distortion vs. Output Power VDD = 28 V, IDQ = 50 mA, ƒ = 1842 MHz, POUT (PEP) = 4 W 38 VDD = 28 V, IDQ = 50 mA, ƒ1 = 1841.9 MHz, ƒ2 = 1842 MHz -10 -10 3rd Order -20 -20 IMD (dBc) IMD (dBc) 3rd Order -30 5th -40 -50 7th -30 5th -40 -50 -60 7th -60 0 20 40 60 80 100 32 Tone Spacing (MHz) Data Sheet 34 36 38 40 Output Power, PEP (dBm) 5 of 18 Rev. 08, 2010-06-07 PTFA220041M Confidential, Limited Internal Distribution Broadband Circuit Impedance, 1842 MHz Z Load W R jX 720 2.4 16.9 45.2 25.2 820 1.8 13.4 31.0 15.2 869 1.6 11.8 21.3 18.2 894 1.6 12.0 22.1 18.4 920 1.6 10.6 14.5 21.5 940 1.6 10.1 15.2 21.4 960 1.6 10.3 16.1 18.9 1805 2.1 3.2 6.8 12.1 1880 2.1 2.2 6.4 10.9 1930 1.8 1.3 6.3 10.6 1990 2.1 1.5 4.3 8.1 2110 2.5 2.0 4.9 8.4 2170 2.0 2.0 4.4 8.8 D Z Source Z Load G S 0 .15 0.10 0. 4 0 0. 35 1 jX 0.9 R 0. 8 MHz 0. 5 0. 6 0. 7 Z Source W Frequency 45 0. 0 5 4 0. Z Source 0. 3 R --> 0. 720 MHz Z Load RD G E NE RA T O 0. 2 S T OW A 2170 MHz 720 MHz 0 .1 Data Sheet 0.1 6 of 18 2 0.5 0.4 0.3 0.2 0.1 0.0 2170 MHz W ARD LOA D T HS T O L E NG - W AV E LE NGT H Z0 = 50 Ω Rev. 08, 2010-06-07 PTFA220041M Confidential, Limited Internal Distribution Reference Circuit, 1842 MHz VDD 28 V R804 2000 Ohm TL103 TL107 1 S2 R805 10 Ohm S3 TL105 TL101 3 2 C803 1000000 pF 4 R803 500 Ohm In 2 1 Out NC NC 3 6 7 2 C 3 E 4 1 B R802 1300 Ohm R102 10 Ohm TL118 C101 6.2 pF 2 C105 7.5 pF C104 7.5 pF TL116 TL113 TL102 TL117 3 1 TL114 2 3 1 5 C802 1000000 pF TL110 2 � � � � � TL111 3 1 1 TL109 C103 12 pF S4 TL108 RF_IN 2 3 4 4 Er=3.48 H=20 mil RO/RO4350B1 DCVS V1 R801 1200 Ohm TL106 GATE DUT 4 3 L1 22 nH TL104 S5 8 C801 1000000 pF 4 TL115 TL112 C107 7.5 pF C106 7.5 pF C102 4.7 pF Reference circuit input schematic for ƒ = 1842 MHz TL225 TL224 TL226 TL216 TL215 TL201 TL214 C204 100000 pF C205 12 pF TL206 TL223 C206 2200000 pF TL207 TL205 3 2 1 2 TL211 TL202 3 2 1 1 VDD 28 V 3 2 1 3 TL203 L2 22 nH TL204 TL212 TL210 DRAIN DUT TL208 2 TL209 3 TL213 TL222 1 1 TL221 1 2 � � � � �� � � � � � � � �� � �� � TL219 1 C203 4.7 pF 2 3 3 3 C202 4.7 pF 2 TL220 TL217 C207 12 pF TL218 RF_OUT C201 3.6 pF Reference circuit output schematic for ƒ = 1842 MHz Data Sheet 7 of 18 Rev. 08, 2010-06-07 PTFA220041M Confidential, Limited Internal Distribution Reference Circuit, 1842 MHz (cont.) Electrical Characteristics at 1842 MHz Transmission Electrical Line Characteristics Dimensions: mm Dimensions: mils Input TL101 0.005 λ, 41.75 W W = 1.524, L = 0.508 W = 60, L = 20 TL102 0.021 λ, 51.98 W W = 1.087, L = 2.108 W = 43, L = 83 W = 1.524 W = 60 TL103 TL104 0.019 λ, 25.04 W W = 3.048, L = 1.778 W = 120, L = 70 TL105 0.052 λ, 41.75 W W = 1.524, L = 5.08 W = 60, L = 200 TL106 0.013 λ, 41.75 W W = 1.524, L = 1.27 W = 60, L = 50 TL107 0.015 λ, 54.17 W W = 1.016, L = 1.524 W = 40, L = 60 TL108 0.033 λ, 51.98 W W = 1.087, L = 3.264 W = 43, L = 129 TL109 0.149 λ, 51.98 W W = 1.087, L = 14.681 W = 43, L = 578 TL110 0.034 λ, 51.98 W W = 1.087, L = 3.378 W = 43, L = 133 TL111 0.008 λ, 51.98 W W1 = 1.087, W2 = 1.087, W3 = 0.813 W1 = 43, W2 = 43, W3 = 32 TL112, TL113, TL115, TL116 W = 0, L = 0 W = 0, L = 0 TL114, TL 117 W1 = 1.087, W2 = 0.813, W3 = 1.087 W4 = 0.813 W1 = 43, W2 = 32, W3 = 43, W4 = 32 TL118 W1 = 3.048, W2 = 0.762, W3 = 3.048, W4 = 0.762 W1 = 120, W2 = 30, W3 = 120, W4 = 30 Output TL201, TL225, TL226 W1 = 0.025, W2 = 0.025 W1 = 1, W2 = 1 TL202 0.013 λ, 41.75 W W1 = 1.524, W2 = 1.524, W3 = 1.27 W1 = 60, W2 = 60, W3 = 50 TL203 0.005 λ, 41.75 W W = 1.524, L = 0.508 W = 60, L = 20 TL204 0.016 λ, 41.75 W W = 1.524, L = 1.524 W = 60, L = 60 TL205 0.039 λ, 41.75 W W1 = 1.524, W2 = 1.524, W3 = 3.81 W1 = 60, W2 = 60, W3 = 150 TL206, TL207 0.016 λ, 41.75 W W1 = 1.524, W2 = 1.524, W3 = 1.524 W1 = 60, W2 = 60, W3 = 60 TL208 0.008 λ, 25.04 W W1 = 3.048, W2 = 3.048, W3 = 0.762 W1 = 120, W2 = 120, W3 = 30 W = 1.087, W2 = 3.048 W = 43, W2 = 120 TL209 TL210 0.019 λ, 25.04 W W = 3.048, L = 1.778 W = 120, L = 70 TL211 0.014 λ, 41.75 W W = 1.524, L = 1.346 W = 60, L = 53 TL212 0.013 λ, 63.89 W W = 0.762, L = 1.27 W = 30, L = 50 TL213 0.031 λ, 51.98 W W = 1.087, L = 3.073 W = 43, L = 121 TL214 0.163 λ, 47.12 W W = 1.27, L = 15.926 W = 50, L = 627 TL215 0.074 λ, 47.12 W W = 1.27, L = 7.29 W = 50, L = 287 TL216 0.076 λ, 15.92 W W = 5.283, L = 6.986 W = 208, L = 275 TL217 0.123 λ, 51.98 W W = 1.087, L = 12.103 W = 43, L = 477 TL218 0.033 λ, 51.98 W W = 1.087, L = 3.264 W = 43, L = 129 TL219, TL221, TL222 0.008 λ, 51.98 W W1 = 1.087, W2 = 1.087, W3 = 0.813 W1 = 43, W2 = 43, W3 = 32 TL220 0.060 λ, 51.98 W W = 1.087, L = 5.867 W = 43, L = 231 TL223 0.016 λ, 41.75 W W = 1.524, L = 1.524 W = 60, L = 60 TL224 0.149 λ, 47.12 W W = 1.27, L = 14.554 W = 50, L = 573 Table continued next page Data Sheet 8 of 18 Rev. 08, 2010-06-07 PTFA220041M Confidential, Limited Internal Distribution Reference Circuit, 1842 MHz (cont.) C801 R802 C803 VDD 802 R801 S5 S4 R804 R803 S3 S2 R805 C105 C104 C103 C205 C206 C204 L2 L1 DUT C102 C101 R102 C106 C107 C202 C203 RO4350, .020 PTFA220041M C201 C207 (73) � � � � �� � � � � � � � �� � �� � Reference circuit assembly diagram (not to scale)* Data Sheet 9 of 18 Rev. 08, 2010-06-07 PTFA220041M Confidential, Limited Internal Distribution Reference Circuit, 1842 MHz (cont.) Circuit Assembly Information DUT PTFA220041M LDMOS Transistor PCB LTN/PTFA220041M 0.508 mm [.020"] thick, er = 3.48 Rogers 4350, 1 oz. copper Component Description Suggested Manufacturer P/N Chip capacitor, 6.2 pF ATC 100A6R2CW150X Input C101 C102 Chip capacitor, 4.7 pF ATC 100A4R7CW150X C103 Chip capacitor, 12 pF ATC 100A120JW150X C104, C105, C106, C107 Chip capacitor, 7.5 pF ATC 100A7R5CW150X C801, C802, C803 Chip capacitor, 1.0 µF Digi-Key 445-1411-2-ND L1 Inductor, 22 nH Coilcraft 0805HT-22NX_BG R102, R805 Resistor, 10 W Digi-Key P10ECT-ND R801 Resistor, 1200 W Digi-Key P1.2KECT-ND R802 Resistor, 1300 W Digi-Key P1.3KECT-ND R803 Resistor, 500 W Digi-Key P500ECT-ND R804 Resistor, 2000 W Digi-Key P2.0KECT-ND S2 EMI Suppression Capacitor Murata NFM18PS105R0J3 S3 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND S4 Transistor Infineon Technologies BCP56 S5 Voltage regulator National Semiconductor LM7805 Chip capacitor, 3.6 pF ATC 100A3R6CW150X Output C201 C202, C203 Chip capacitor, 4.7 pF ATC 100A4R7CW150X C204 Chip capacitor, 0.1 µF Digi-Key PCC104BCT-ND C205, C207 Chip capacitor, 12 pF ATC 100A120JW150X C206 Chip capacitor, 2.2 µF Digi-Key 445-1447-2-ND L2 Inductor, 22 nH Coilcraft 0805HT-22NX_BG Data Sheet 10 of 18 Rev. 08, 2010-06-07 PTFA220041M Confidential, Limited Internal Distribution Typical Performance, 940 MHz Power Sweep, CW Gain & Efficiency vs. Output Power Two-carrier WCDMA 3GPP VDD = 28 V, IDQ = 50 mA, ƒ = 940 MHz, 3GPP WCDMA, P/AR = 8:1, 10 MHz carrier spacing BW 3.84 MHz 21 30 Efficiency 20 19 18 10 17 27 29 31 Output Power (dBm) 33 50 19 40 Efficiency 18 30 17 20 30 35 31 32 50 -15 45 Efficiency 40 -25 35 30 -30 IMD3 20 37 38 Gain 50 20 40 19 30 Efficiency 18 39 20 33 34 35 36 37 38 39 Output Power, PEP (dBm) Output Power, PEP (dBm) Data Sheet 38 25 -40 36 37 60 21 Gain (dB) -10 35 36 22 Efficiency (%) IMD (dBc) 55 34 35 VDD = 28 V, IDQ = 50 mA, ƒ1 = 939.9 MHz, ƒ2 = 940 MHz -5 33 34 Two-tone Drive-up Two-tone Drive-up -35 33 Output Power (dBm) VDD = 28 V, IDQ = 50 mA, ƒ1 = 939.9 MHz, ƒ2 = 940 MHz -20 60 20 0 25 Gain Drain Efficiency (%) 40 70 Efficiency (%) Gain (dB) 20 22 Gain (dB) Gain 21 50 Drain Efficiency (%) 22 VDD = 28 V, IDQ = 50 mA, ƒ = 940 MHz 11 of 18 Rev. 08, 2010-06-07 PTFA220041M Confidential, Limited Internal Distribution Typical Performance, 940 MHz (cont.) CW Gain & Efficiency vs. Output Power & VDD Intermodulation Distortion vs. Output Power ƒ = 940 MHz 21.5 -10 Power Gain (dB) IMD (dBc) -20 3rd Order -30 5th -40 -50 21.0 50 20.5 40 20.0 30 19.5 20 19.0 7th 60 Gain Efficiency 18.5 -60 32 34 36 24 38 26 28 Efficiency (%) VDD = 28 V, IDQ = 50 mA, ƒ1 = 939.9 MHz, ƒ2 = 940 MHz VDD = 32 V VDD = 28 V VDD = 24 V 30 32 10 0 34 36 38 40 Output Power (dBm) Output Power, PEP (dBm) Small Signal CW Gain & Input Return Loss VDD = 28 V, IDQ = 50 mA 22 0 20 -5 18 -10 16 -15 IRL 14 -20 12 Input Return Loss (dB) Power Gain (dB) Gain -25 790 890 990 1090 Frequency (MHz) Data Sheet 12 of 18 Rev. 08, 2010-06-07 PTFA220041M Confidential, Limited Internal Distribution Reference Circuit, 940 MHz � 28 V TL112 TL113 TL115 3 1 2 S2 4 In Out 2 1 NC NC 3 6 7 5 C802 1000 pF S3 DCVS V1 3 4 R803 500 Ohm L1 22 nH � � � � S5 8 C801 1000 pF TL111 R805 10 Ohm � � VDD R804 2000 Ohm C803 1000 pF R801 1200 Ohm 2 C 3 E 4 1 B R802 1300 Ohm TL116 S4 R102 10 Ohm TL104 C103 62 pF TL105 RF_IN TL107 2 TL102 TL106 2 1 TL103 1 2 3 3 C104 10 pF Er=3.48 H=20 mil RO/RO4350B1 R101 1.3 Ohm TL110 TL101 TL114 3 1 1 GATE DUT 2 3 TL108 TL109 C101 16 pF C102 22 pF Reference circuit input schematic for ƒ = 940 MHz TL202 TL201 TL212 TL205 TL206 TL211 TL204 C204 62 pF C201 100000 pF TL217 C202 2200000 pF TL213 TL218 TL216 3 2 2 1 1 � � � � � � � 2 TL203 TL222 3 1 VDD 3 2 1 28 V 3 TL214 L2 22 nH TL215 TL223 TL221 DRAIN DUT TL219 2 TL220 3 TL224 L3 4.3 nH TL210 1 TL209 1 2 3 TL207 C205 62 pF TL208 RF_OUT C203 3.6 pF Reference circuit output schematic for ƒ = 940 MHz Data Sheet 13 of 18 Rev. 08, 2010-06-07 PTFA220041M Confidential, Limited Internal Distribution Reference Circuit, 940 MHz (cont.) Electrical Characteristics at 940 MHz Transmission Electrical Line Characteristics Dimensions: mm Dimensions: mils Input TL101 0.004 λ, 24.85 Ω W1 = 3.048, W2 = 3.048, W3 =0.762 W1 = 120, W2 = 120, W3 = 30 TL102, TL103 0.004 λ, 51.66 Ω W1 = 1.087, W2 = 1.087, W3 = 0.813 W1 = 43, W2 = 43, W3 = 32 TL104 0.017 λ, 51.66 Ω W = 1.087, L = 3.264 W = 43, L = 129 TL105 0.038 λ, 51.66 Ω W = 1.087, L = 7.341 W = 43, L = 289 TL106 0.047 λ, 51.66 Ω W = 1.087, L = 9.144 W = 43, L = 360 TL107 0.004 λ, 51.66 Ω W1 = 1.087, W2 = 1.087, W3 = 0.762, W1 = 43, W2 = 43, W3 = 30 TL108, TL109 0.000 λ, 144.28 Ω W = 0.025, L = 0.000 W = 1, L = 0 TL110 0.019 λ, 51.66 Ω W = 1.087, L = 3.734 W = 43, L = 147 TL111 W = 1.524 W = 60 TL112 0.008 λ, 53.85 Ω W = 1.016, L = 1.524 W = 40, L = 60 TL113 0.027 λ, 41.47 Ω W = 1.524, L = 5.080 W = 60, L = 200 TL114 0.010 λ, 24.85 Ω W = 3.048, L = 1.778 W = 120, L = 70 TL115 0.003 λ, 41.47 Ω W = 1.524, L = 0.508 W = 60, L = 20 TL116 0.007 λ, 41.47 Ω W = 1.524, L = 1.270 W = 60, L = 50 0.076 λ, 46.82 Ω W = 1.270, L = 14.554 W = 50, L = 573 Output TL201 TL202 W1 = 0.025, W2 = 0.025 W1 = 1, W2 = 1 TL203 0.007 λ, 41.47 Ω W1 = 1.524, W2 = 1.524, W3 = 1.270 W1 = 60, W2 = 60, W3 = 50 TL204 0.083 λ, 46.82 Ω W = 1.270, L = 15.927 W = 50, L = 627 TL205 0.038 λ, 46.82 Ω W = 1.270, L = 7.290 W = 50, L = 287 TL206 0.039 λ, 15.79 Ω W = 5.283, L = 6.986 W = 208, L = 275 TL207 0.063 λ, 51.66 Ω W = 1.087, L = 12.103 W = 43, L = 477 TL208 0.017 λ, 51.66 Ω W = 1.087, L = 3.264 W = 43, L = 129 TL209 0.004 λ, 51.66 Ω W1 = 1.087, W2 = 1.087, W3 = 0.813 W1 = 43, W2 = 43, W3 = 32 TL210 0.046 λ, 51.66 Ω W =1.087, L = 8.852 W = 43, L = 349 W1 = 0.025, W2 = 0.025 W1 = 1, W2 = 1 TL211, TL212 TL213, TL215 0.008 λ, 41.47 Ω W = 1.524, L = 1.524 W = 60, L = 60 TL214 0.003 λ, 41.47 Ω W = 1.524, L = 0.508 W = 60, L = 20 TL216 0.020 λ, 41.47 Ω W1 = 1.524, W2 = 1.524, W3 = 3.810 W1 = 60, W2 = 60, W3 = 150 TL217, TL218 0.008 λ, 41.47 Ω W1 = 1.524, W2 = 1.524, W3 = 1.524 W1 = 60, W2 = 60, W3 = 60 TL219 0.004 λ, 24.85 Ω W1 = 3.048, W2 = 3.048, W3 = 0.762 W1 = 120, W2 = 120, W3 = 30 W1 = 1.087, W2 = 3.048 W1 = 43, W2 = 120 TL220 TL221 0.010 λ, 24.85 Ω W = 3.048, L = 1.778 W = 120, L = 70 TL222 0.007 λ, 41.47 Ω W = 1.524, L = 1.346 W = 60, L = 53 TL223 0.007 λ, 63.55 Ω W = 0.762, L = 1.270 W = 30, L = 50 TL224 0.004 λ, 51.66 Ω W = 1.087, L = 0.851 W = 43, L = 33 Table continued next page Data Sheet 14 of 18 Rev. 08, 2010-06-07 PTFA220041M Confidential, Limited Internal Distribution Reference Circuit, 940 MHz (cont.) VDD C801 R802 C803 C802 S5 R801 S4 R804 S3 R803 R805 S2 C202 C201 C204 L2 L1 C103 DUT C104 C101 R101 R102 C102 L3 RO4350, .020 PTFA220041M C203 C205 (73) � � � � �� � � � � � � � � � � � � � � � �� � Reference circuit assembly diagram (not to scale)* Data Sheet 15 of 18 Rev. 08, 2010-06-07 PTFA220041M Confidential, Limited Internal Distribution Reference Circuit, 940 MHz (cont.) Circuit Assembly Information DUT PTFA220041M LDMOS Transistor PCB LTN/PTFA220041M–9 0.508 mm [.020"] thick, er = 3.48 Rogers 4350, 1 oz. copper Component Description Suggested Manufacturer P/N Input C101 Chip capacitor, 16 pF ATC 100A160JW150X C102 Chip capacitor, 22 pF ATC 100A220JW150X C103 Chip capacitor, 62 pF ATC 100A620JW150X C104 Chip capacitor, 10 pF ATC 100A100JW150X C801, C802, C803 Chip capacitor, 1000 pF Digi-Key PCC1772CT-ND L1 Inductor, 22 nH Coilcraft 0805HT-22NX_BG R101 Resistor, 1.3 W Digi-Key P1.3ECT-ND R102, R805 Resistor, 10 W Digi-Key P10ECT-ND R801 Resistor, 1200 W Digi-Key P1.2KECT-ND R802 Resistor, 1300 W Digi-Key P1.3KECT-ND R803 Resistor, 500 W Digi-Key P5.0KECT-ND R804 Resistor, 2000 W Digi-Key P2.0KECT-ND S2 EMI Suppression Capacitor Murata NFM18PS105R0J3 S3 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND S4 Transistor Infineon Technologies BCP56 S5 Voltage Regulator National Semiconductor LM7805 Output C201 Chip capacitor, 0.1 µF Digi-Key PCC104BCT-ND C202 Chip capacitor, 2.2 µF Digi-Key 445-1447-2-ND C203 Chip capacitor, 3.6 pF ATC 100A3R6CW150X C204, C205 Chip capacitor, 62 pF ATC 100A620JW150X L2 Inductor, 22 nH Coilcraft 0805HT-22NX_BG L3 Inductor, 4.3 nH Coilcraft 0603CS-4N3X_BG Data Sheet 16 of 18 Rev. 08, 2010-06-07 PTFA220041M Confidential, Limited Internal Distribution Package Outline Specifications Package PG-SON-10 0.54 [.021] 2 PLACES 5X .320 [.0126] 2 PLACES 4.00 [.157] 6 7 8 9 10 .815 [.0321] 4.00 [.157] 2.97 [.117] S 2.37 [.093] 5X .515 [.0203] 2 PLACES INDEX MARKING 5 4 3 2 1 4X 0.65 [.026] 2 PLACES TOP VIEW 0.30 [.012] INDEX MARKING 3.40 [.134] BOTTOM VIEW 0.38 [.015] BOTH SIDES 1.42 [.056] PG-SON-10_po_02-19-2010 0.05 [.002] SIDE VIEW Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.1 [.004] unless specified otherwise. 4. Package dimension: 4.00 mm x 4.00 mm x 1.42 mm. 5. Pins: S = source, 1 – 5 = gate, 6 – 10 = drain. 6. NiPdAu plating (gold top layer): 0.025 – 0.127 micron [1 – 5 microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 17 of 18 Rev. 08, 2010-06-07 PTFA220041M V4 Confidential, Limited Internal Distribution Revision History: 2010-06-07 Previous Version: 2010-04-15, Data Sheet Page Subjects (major changes since last revision) 6 Updated broadband circuit impedance Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2010-06-07 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 18 of 18 Rev. 08, 2010-06-07