PTFA091203EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band. This device features internal I/O matching and thermally-enhanced open cavity ceramic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.. PTFA091203EL Package H-33288-6 Features Two-carrier WCDMA Performance • Broadband internal matching 3GPP signal, 10 MHz carrier spacing, BW = 3.84 MHz, PAR = 8 dB VDD = 30 V , IDQ = 1.05 A 40 960 MHz 940 MHz 920 MHz -20 -25 Efficiency 35 30 -30 25 IMD Up -35 20 -40 15 -45 10 IMD Low -50 5 -55 0 32 34 36 38 40 42 44 46 Drain Efficiency (%) Intermodulation Distortion (dBc) -15 • Typical two-carrier WCDMA performance, 960 MHz, 30 V - Average output power = 28 W - Gain = 17 dB - Efficiency = 27% - Intermodulation Distortion = –36 dBc • Typical CW performance, 960 MHz, 30 V - Output power at P1dB = 140 W - Gain = 17 dB - Efficiency = 54% • Integrated ESD protection: Human Body Model, Class 2 (minimum) • Excellent thermal stability, low HCI drift • Capable of handling 10:1 VSWR @ 30 V, 120 W (CW) output power 48 • Pb-free and RoHS-compliant Output Power (dBm) RF Characteristics Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) VDD = 30 V, IDQ = 1050 mA, POUT = 28 W Avg ƒ1 = 950 MHz, ƒ2 = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.0 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps — 17 — dB Drain Efficiency hD — 27 — % Intermodulation Distortion IMD — –36 — dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 10 Rev. 05, 2010-11-12 PTFA091203EL Confidential, Limited Internal Distribution RF Characteristics (cont.) Two-tone Measurements (tested in Infineon test fixture) VDD = 30 V, IDQ = 1050 mA, POUT = 110 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz Characteristic Symbol Min Typ Max Unit Gain Gps 17 18 — dB Drain Efficiency hD 38 40 — % Intermodulation Distortion IMD — –30 –28 dBc DC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.07 — W Operating Gate Voltage VDS = 30 V, IDQ = 1050 mA VGS 2.0 2.5 3.0 V Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C, 120 W CW) RqJC 0.42 °C/W Ordering Information Type and Version Package Type Package Description Shipping PTFA091203EL V4 H-33288-6 Thermally-enhanced slotted flange, single-ended Tray PTFA091203EL V4 R250 H-33288-6 Thermally-enhanced slotted flange, single-ended Tape & Reel, 250 pcs Data Sheet 2 of 10 Rev. 05, 2010-11-12 PTFA091203EL Confidential, Limited Internal Distribution Typical Performance (data taken in a production test fixture) Two-tone Drive Up CW Conditions VDD = 30V, IDQ = 1.05 A 20 50 25 ptfa091203ef -55 15 10 17 30 5 20 IMD3 -65 41 43 45 47 36 49 Average Output Power (dBm) 38 40 42 44 52 R --> RA T O RD G E NE S 0.0 Z Source W ARD LOA D T HS T O L E NG - W AV E LE NGT H S T OW A G Z0 = 50 Ω 0 .1 Z Load 970 MHz MHz R jX R jX 910 1.42 –2.36 2.43 –3.11 920 1.40 –2.21 2.41 –2.97 930 1.38 –2.07 2.39 –2.83 940 1.35 –1.92 2.37 –2.68 950 1.33 –1.78 2.36 –2.54 960 1.32 –1.64 2.34 –2.40 970 1.30 –1.50 2.33 –2.26 0.1 0. 2 0. 3 Rev. 05, 2010-11-12 .4 5 0 0. 3 of 10 0. Data Sheet 45 0 0. 5 E W AV <--- Z Load W Z Load 970 MHz 910 MHz 910 MHz Z Source W 10 50 0. 2 D Frequency 48 Output Power (dBm) Broadband Circuit Impedance Z Source 46 0.4 39 0.3 37 0.2 35 0. 15 0 33 20 45 16 Nornalized to 50 Ohms 5 -60 0.1 -50 0. 0 -45 40 Gain 3 -40 Gain (dB) 30 ga091203ef Sept. 2, 2010 12:02:32 PM 18 -35 0. 6 Drain Efficiency (%) 19 5 40 35 0. -30 4 -25 60 Efficiency 960 MHz 940 MHz 920 MHz 0. 45 Efficiency 960 MHz 940 MHz 920 MHz Drain Efficiency (%) -20 0. Intermodulation Distortion (dBc) VDD = 30V, IDQ = 1.05 A PTFA091203EL Confidential, Limited Internal Distribution Reference Circuit C802 100000 pF er=3.48 H=30 mil RO/RO4350B1 S3 8 C804 10000 R804 10 Ohm R802 10 Ohm S1 In Out 2 3 R805 1200 Ohm 3 1 NC NC 4 6 7 C103 33 pF TL101 C104 10000 pF TL131 TL113 TL129 3 1 C105 4710000 pF 2 TL128 3 1 3 R801 1300 Ohm C101 4.7 pF R101 10 Ohm TL127 3 1 2 E C102 10000 pF TL125 TL116 TL126 3 3 1 2 R103 10 Ohm TL107 TL102 TL112 2 S B R102 5100 Ohm C 4 1 C803 10000 C801 100000 pF S2 2 R803 1000 Ohm C805 10000 pF 5 1 TL136 3 2 1 2 TL124 TL109 TL123 TL110 TL122 TL115 TL118 TL117 TL121 C108 33 pF TL133 TL105 RF_IN 2 TL108 TL103 TL132 TL135 1 TL130 TL114 3 1 2 2 TL134 GATE DUT (Pin A) 1 a 0 9 1 2 0 3 e l _ b d i n _ 0 9 - 0 7 - 2 0 1 0 3 TL106 TL119 C106 5.1 pF C107 6.2 pF TL104 TL111 3 TL120 Reference circuit input schematic for ƒ = 960 MHz C204 10000000 pF TL227 TL222 1 TL224 C203 10000000 pF C201 1000000 pF C205 10000000 pF TL223 2 3 2 3 C202 10000000 pF TL225 3 3 1 1 2 1 2 VDD 4 C211 20000 pF TL226 DUT (Pin D) C214 1.5 pF TL212 TL204 DRAIN DUT (Pin C) TL219 TL207 TL209 TL218 2 C212 33 pF TL205 TL201 TL206 TL221 TL202 TL210 TL211 3 1 TL213 TL220 RF_OUT 4 TL203 C213 1.5 pF DUT (Pin D) er=3.48 H=30 mil RO/RO4350B1 C215 20000 pF TL208 TL216 2 TL217 2 3 1 TL228 TL215 2 3 1 2 C206 10000000 pF 1 a 0 9 1 2 0 3 e l _ b d o u t _ 0 9 - 0 7 - 2 0 1 0 3 1 3 4 C210 10000000 pF TL214 C209 10000000 pF C208 1000000 pF C207 10000000 pF VDD Reference circuit output schematic for ƒ = 960 MHz Data Sheet 4 of 10 Rev. 05, 2010-11-12 PTFA091203EL Confidential, Limited Internal Distribution Reference Circuit (cont.) Description DUT PCB PTFA091203EL 0.760 mm [.030"] thick, er = 3.48, Rogers 4350, 1 oz. copper Electrical Characteristics at 960 MHz Transmission Electrical Line Characteristics Dimensions: mm Dimensions: mils W = 0.762 W = 30 Input TL101, TL102, TL122, TL123, TL124 TL103 0.059 λ, 8.94 Ω W = 15.240, L = 10.287 W = 600, L = 405 TL104, TL106 0.040 λ, 51.58 Ω W = 1.651, L = 7.620 W = 65, L = 300 TL105 0.086 λ, 38.82 Ω W = 2.540, L = 15.900 W = 100, L = 626 TL107 0.007 λ, 78.27 Ω W = 0.762, L = 1.270 W = 30, L = 50 TL108 0.002 λ, 38.82 Ω W = 2.540, L = 0.330 W = 100, L = 13 TL109 0.015 λ, 78.27 Ω W = 0.762, L = 2.921 W = 30, L = 115 TL110 0.098 λ, 78.27 Ω W = 0.762, L = 19.050 W = 30, L = 750 TL111 0.004 λ, 51.58 Ω W = 1.651, L = 0.762 W = 65, L = 30 TL112 0.026 λ, 78.27 Ω W = 0.762, L = 5.080 W = 30, L = 200 TL113 0.014 λ, 36.29 Ω W = 2.794, L = 2.642 W = 110, L = 104 TL114 0.039 λ, 8.94 Ω W = 15.240, L = 6.731 W = 600, L = 265 TL115 0.033 λ, 51.58 Ω W = 1.651, L = 6.302 W = 65, L = 248 TL116 0.001 λ, 36.29 Ω W = 2.794, L = 0.254 W = 110, L = 10 TL117 0.007 λ, 51.58 Ω W = 1.651, L = 1.270 W = 65, L = 50 W = 1.651 W = 65 TL118, TL119, TL120, TL121 TL125, TL126, TL127, TL128 0.011 λ, 36.29 Ω W1 = 2.794, W2 = 2.794, W3 = 2.032 W1 = 110, W2 = 110, W3 = 80 TL129, TL131 0.012 λ, 36.29 Ω W1 = 2.794, W2 = 2.794, W3 = 2.286 W1 = 110, W2 = 110, W3 = 90 TL130 0.015 λ, 8.94 Ω W1 = 15.240, W2 = 15.240, W3 = 2.540 W1 = 600, W2 = 600, W3 = 100 TL132 0.004 λ, 8.94 Ω W1 = 15.240, W2 = 15.240, W3 = 0.762 W1 = 600, W2 = 600, W3 = 30 TL133 0.000 λ, 38.82 Ω W1 = 2.540, W2 = 2.540, W3 = 0.025 W1 = 100, W2 = 100, W3 = 1 TL134 W1 = 17.780, W2 = 12.700 W1 = 700, W2 = 500 TL135 W1 = 2.540, W2 = 15.240 W1 = 100, W2 = 600 W = 0.762, L = 0.508 W = 30, L = 20 TL136 0.003 λ, 78.27 Ω table continued on page 6 Data Sheet 5 of 10 Rev. 05, 2010-11-12 PTFA091203EL Confidential, Limited Internal Distribution Reference Circuit (cont.) Electrical Characteristics at 960 MHz Transmission Electrical Line Characteristics Dimensions: mm Dimensions: mils Output TL201, TL221 0.058 λ, 51.58 Ω W = 1.651, L = 10.922 W = 65, L = 430 TL202 0.014 λ, 51.58 Ω W = 1.651, L = 2.720 W = 65, L = 107 TL203, TL204 0.000 λ, 146.88 Ω W = 0.025, L = 0.025 W = 1, L = 1 TL205 0.014 λ, 38.82 Ω W = 2.540, L = 2.540 W = 100, L = 100 TL206 0.013 λ, 51.58 Ω W = 1.651, L = 2.540 W = 65, L = 100 TL207 0.128 λ, 10.17 Ω W = 13.208, L = 22.352 W = 520, L = 880 TL208, TL226 0.014 λ, 23.03 Ω W = 5.080, L = 2.540 W = 200, L = 100 TL209 W1 = 5.080, W2 = 0.025, W3 = 5.080 W4 = 0.025 W1 = 200, W2 = 1, W3 = 200, W4 = 1 TL210, TL211, TL212, TL213 W = 1.651 W = 65 TL214, TL225 0.090 λ, 28.85 Ω W = 3.810, L = 16.398 W = 150, L = 646 TL215, TL223 0.021 λ, 28.85 Ω W1 = 3.810, W2 = 3.810, W3 = 3.810 W1 = 150, W2 = 150, W3 = 150 TL216, TL222 0.004 λ, 28.85 Ω W1 = 3.810, W2 = 3.810, W3 = 0.762 W1 = 150, W2 = 150, W3 = 30 TL217, TL224 0.021 λ, 23.03 Ω W1 = 5.080, W2 = 5.080, W3 = 3.810 W1 = 200, W2 = 200, W3 = 150 TL218 (taper) 0.015 λ, 23.03 Ω / 38.82 Ω W1 = 5.080, W2 = 2.540, L = 2.794 W1 = 200, W2 = 100, L = 110 TL219 (taper) 0.064 λ, 10.17 Ω / 23.03 Ω W1 = 13.208, W2 = 5.080, L = 11.176 W1 = 520, W2 = 200, L = 440 TL220 0.004 λ, 51.58 Ω W = 1.651, L = 0.762 W = 65, L = 30 W1 = 3.810, W2 = 2.540, W3 = 3.810 W4 = 2.540 W1 = 150, W2 = 100, W3 = 150, W4 = 100 TL227, TL228 See further reference circuit information on next page Data Sheet 6 of 10 Rev. 05, 2010-11-12 PTFA091203EL Confidential, Limited Internal Distribution Reference Circuit (cont.) Circuit Assembly Information Test Fixture Part No. LTN/PTFA091203EF Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower VDD C805 C804 R801 C803 R802 R805 10 µF + S3 R102 VDD S2 + 10 µF C103 C802 + R804 C104 C105 C201 C204 C203 C205 C801 S1 R803 C202 C211 R101 R103 C214 C101 C102 RF_IN C108 RF_OUT C212 C107 C213 C215 C106 + 10 µF + 10 µF C209 C206 VDD C207 C210 C208 PTFA091203_IN_01 PTFA091203_OUT_01 RO4350, .030 (62) RO4350, .030 (62) a 0 9 1 2 0 3 e l _ C D _ 1 1 - 1 2 - 2 0 1 0 Reference circuit assembly diagram (not to scale) Data Sheet 7 of 10 Rev. 05, 2010-11-12 PTFA091203EL Confidential, Limited Internal Distribution Reference Circuit (cont.) Component Description Suggested Manufacturer P/N Input C101 Chip capacitor, 4.7 pF ATC ATC100B4R7BW500XB C102 Chip capacitor, 10000 pF ATC ATC200B103MW C103, C108 Chip capacitor, 33 pF ATC ATC100B330FW500XB C104 Chip capacitor, 0.01 μF ATC ATC200B103MW C105 Chip capacitor, 4.71 μF Digi-Key 493-2372-2-ND C106 Chip capacitor, 5.1 pF ATC ATC100B5R1BW500XB C107 Chip capacitor, 6.2 pF ATC ATC100B6R2BW500XB C801, C802 Chip capacitor, 0.1 μF Digi-Key PCC104BCT-ND C803, C804, C805 Capacitor, 0.01 μF Digi-Key PCC1772CT-ND R101, R103, R802, R804 Resistor, 10 Ω Digi-Key P10ECT-ND R102 Resistor, 5100 Ω Digi-Key P5.1KECT-ND R801 Resistor, 1300 Ω Digi-Key P1.3KGCT-ND R803 Resistor, 1000 Ω Digi-Key P1.0KECT-ND R805 Resistor, 1200 Ω Digi-Key P1.2KGCT-ND S1 Potentiometer, 2k Ω Digi-Key 3224W-202ECT-ND S2 Transistor Digi-Key BCP5616TA-ND S3 Voltage Regulator Digi-Key LM78L05ACM-ND Chip capacitor, 1 μF Digi-Key 478-3993-2-ND Output C201, C208 C202, C203, C206, C207 Capacitor, 10 μF Digi-Key 281M5002106K C204, C205, C209, C210 Capacitor, 10 μF Digi-Key 587-1818-2-ND C211, C215 Chip capacitor, 20000 pF ATC ATC200B203MW C212 Chip capacitor, 33 pF ATC ATC100B330FW500XB C213, C214 Chip capacitor, 1.5 pF ATC ATC100B1R5BW500XB Data Sheet 8 of 10 Rev. 05, 2010-11-12 PTFA091203EL Confidential, Limited Internal Distribution Package Outline Specifications Package H-33288-6 45° X 2.032 [45° X .080] 4X 30° 4X R1.524 [R.060] 2X 5.080 [.200] (2 PLS) 4X 1.143 [.045] (4 PLS) V D 4.889±.510 [.192±.020] V S CL 2X R1.626 [R.064] G E 9.398 [.370] 9.779 [.385] 19.558±.510 [.770±.020] F H -33288 - 6_ po _02 -18 - 2010 CL 2X 12.700 [.500] 2X 22.860 [.900] 27.940 [1.100] 22.352±.200 [.880±.008] 1.575 [.062] (SPH) 4.039 +.254 –. 127 010 [.159 +. –. 005 ] CL 34.036 [1.340] 1.016 [.040] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: G = gate, S = source, D = drain, V = VDD, E, F = N.C. 5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch]. 6. Gold plating thickness: 0.25 micron [10 microinch] max. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 9 of 10 Rev. 05, 2010-11-12 PTFA091203EL V4 Confidential, Limited Internal Distribution Revision History: 2010-11-12 Previous Version: 2010-10-13, Data Sheet Page Subjects (major changes since last revision) 1, 2, 9 Updated eared flange package type information Data Sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2010-11-12 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 10 of 10 Rev. 05, 2010-11-12