Power Transistors 2SC5686 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor Unit: mm Collector-base voltage (Emitter open) VCBO 2 000 V Collector-emitter voltage (E-B short) VCES 2 000 V Collector-emitter voltage (Base open) VCEO 600 V Emitter-base voltage (Collector open) VEBO 7 V Base current IB 11 A Collector current IC 20 A ICP 30 A PC 70 W (23.4) 5˚ 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5˚ 1 2 5.5±0.3 Unit Ta = 25°C 5˚ 3 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package (2.0) Rating Collector power dissipation (4.5) (2.0) Symbol 3.3±0.3 Parameter Internal Connection 3.5 C B Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 3.0±0.3 5˚ 5˚ (4.0) 2.0±0.2 18.6±0.5 (2.0) Solder Dip ■ Absolute Maximum Ratings TC = 25°C Peak collector current (1.2) 26.5±0.5 • High breakdown voltage: VCBO ≥ 2 000 V • High-speed switching: tf < 200 ns • Wide safe operation area * 5˚ (10.0) ■ Features φ 3.2±0.1 22.0±0.5 15.5±0.5 E Note) *: Non-repetitive peak collector current ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector-base cutoff current (Emitter open) ICBO Conditions Min Typ Max Unit VCB = 1 000 V, IE = 0 50 µA VCB = 2 000 V, IE = 0 1 mA 50 µA 10 Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0 Forward current transfer ratio hFE VCE = 5 V, IC = 10 A Collector-emitter saturation voltage VCE(sat) IC = 10 A, IB = 2.5 A 3 V Base-emitter saturation voltage VBE(sat) IC = 10 A, IB = 2.5 A 1.5 V 5 Transition frequency fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz Storage time tstg IC = 10 A, Resistance loaded 3.0 µs IB1 = 2.5 A, IB2 = −5.0 A 0.2 µs Fall time tf 3 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: March 2004 SJD00303AED 1 2SC5686 Safe operation area Safe operation area (Horizontal operation) 100 40 fH = 64 kHz, TC < 90°C A.S.O for a single pulse load caused by EHT flash over during horizontal operation. t = 100 µs ICP 35 IC DC t= 1 ms t= 10 ms Collector current IC (A) Collector current IC (A) 10 1 10−1 10−2 30 25 20 15 10 5 Non repetitive pulse TC = 25°C 10−3 1 10 100 1 000 Collector-emitter voltage VCE (V) 2 0 0 500 1 000 < 1 mA 1 500 2 000 Collector-emitter voltage VCE (V) SJD00303AED Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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