Transistor 2SC4627 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 1.6±0.15 0.4 +0.1 0.5 1 3 0.5 ● Optimum for RF amplification of FM/AM radios. High transition frequency fT. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing. 1.6±0.1 ● 1.0±0.1 ● 0.8±0.1 0.2–0.05 ■ Features 0.4 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 15 mA Collector power dissipation PC 125 mW Junction temperature Tj 125 ˚C Storage temperature Tstg –55 ~ +125 ˚C ■ Electrical Characteristics +0.1 0.15–0.05 0 to 0.1 (Ta=25˚C) 0.45±0.1 0.3 ■ Absolute Maximum Ratings 0.75±0.15 2 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–75 SS–Mini Type Package Marking symbol : U (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 30 V Emitter to base voltage VEBO IE = 10µA, IC = 0 3 V Forward current transfer ratio hFE * VCB = 6V, IE = –1mA 40 Base to emitter voltage VBE VCB = 6V, IE = –1mA 260 0.72 Transition frequency fT VCB = 6V, IE = –1mA, f = 200MHz Common emitter reverse transfer capacitance Cre VCB = 6V, IE = –1mA, f = 10.7MHz Power gain PG VCB = 6V, IE = –1mA, f = 100MHz 24 dB Noise figure NF VCB = 6V, IE = –1mA, f = 100MHz 3.3 dB *h FE 450 V 650 0.8 MHz 1 pF Rank classification Rank B C D hFE 40 ~ 110 65 ~ 160 100 ~ 260 Marking Symbol UB UC UD 1 2SC4627 Transistor PC — Ta IC — VCE 12 Ta=25˚C 10 100 75 50 25 80µA 8 60µA 6 40µA 4 20µA 80 100 120 140 160 6 Collector to emitter saturation voltage VCE(sat) (V) VCE=6V 25˚C –25˚C 20 15 10 5 0 0 0.4 0.8 1.2 12 1.6 2.0 30 10 3 1 0.3 25˚C 0.1 0.01 0.1 Ta=75˚C –25˚C 0.03 0.3 1 3 1000 800 600 400 200 –10 –30 Emitter current IE (mA) –100 Reverse transfer impedance Zrb (Ω) VCB=6V Ta=25˚C 10 30 300 240 Ta=75˚C 180 25˚C –25˚C 120 60 0 0.1 100 0.3 60 40 20 – 0.3 –1 3 10 30 100 Cre — VCE 80 0 – 0.1 1 Collector current IC (mA) VCB=6V f=2MHz Ta=25˚C 100 180 VCE=6V Zrb — IE 120 120 360 IC/IB=10 fT — IE –3 60 Base current IB (µA) Collector current IC (mA) 1200 –1 0 hFE — IC 100 Base to emitter voltage VBE (V) 0 – 0.1 – 0.3 18 VCE(sat) — IC 30 Ta=75˚C 4 Collector to emitter voltage VCE (V) IC — VBE 25 6 0 0 Forward current transfer ratio hFE 60 –3 Emitter current IE (mA) –10 Common emitter reverse transfer capacitance Cre (pF) 40 8 2 0 20 Ambient temperature Ta (˚C) Collector current IC (mA) 10 2 0 Transition frequency fT (MHz) VCE=6V Ta=25˚C IB=100µA Collector current IC (mA) 125 0 2 IC — I B 12 Collector current IC (mA) Collector power dissipation PC (mW) 150 2.4 IC=1mA f=10.7MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 2SC4627 Transistor Cob — VCB PG — IE 0.8 0.6 0.4 12 f=100MHz Rg=50Ω Ta=25˚C 35 30 VCE=10V 25 6V 20 15 10 8 6 4 0.2 VCE=6V, 10V 2 5 0 5 10 15 20 25 0 – 0.1 – 0.3 30 Collector to base voltage VCB (V) –1 –3 –10 –30 Emitter current IE (mA) bie — gie Reverse transfer susceptance bre (mS) –4mA –7mA 16 100 –2mA 14 100 12 58 10 IE=– 0.5mA –1mA 8 6 58 25 4 25 2 f=10.7MHz 0 0 3 6 9 12 15 Input conductance gie (mS) 0 10.7 25 yre=gre+jbre VCE=10V –1 –4mA –2 –1mA 58 IE=–7mA –3 –4 100 –5 –10 –30 –100 10.7 58 – 0.4mA –1mA 100 –20 150 –2mA –40 150 –4mA 100 58 –60 f=150MHz IE=–7mA 100 –80 –100 f=150MHz –6 – 0.5 –3 bfe — gfe 0 150 yie=gie+jbie VCE=10V –1 Emitter current IE (mA) bre — gre 20 18 0 – 0.1 – 0.3 –100 Forward transfer susceptance bfe (mS) 0 Input susceptance bie (mS) f=100MHz Rg=50kΩ Ta=25˚C 10 Noise figure NF (dB) IE=0 f=1MHz Ta=25˚C 1.0 NF — IE 40 Power gain PG (dB) Collector output capacitance Cob (pF) 1.2 yfe=gfe+jbfe VCE=10V –120 – 0.4 – 0.3 – 0.2 – 0.1 0 Reverse transfer conductance gre (mS) 0 20 40 60 80 Forward transfer conductance 100 gfe (mS) boe — goe IE=– 0.5mA –1mA Output susceptance boe (mS) 1.2 1.0 150 –2mA –4mA 100 0.8 –7mA 0.6 58 0.4 25 0.2 yoe=goe+jboe VCE=10V f=10.7MHz 0 0 0.1 0.2 0.3 0.4 0.5 Output conductance goe (mS) 3