BFG 235 NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 120mA to 250mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor • fT = 5.5 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFG 235 SOT-223 BFG235 Q62702-F1432 1=E 2=B 3=E 4=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 25 Collector-base voltage VCBO 25 Emitter-base voltage VEBO 2 Collector current IC 300 Base current IB 40 Total power dissipation Ptot TS ≤ 80 °C Values Unit V mA mW 2000 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 35 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-13-1996 BFG 235 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 15 200 nA - - 100 IEBO µA - - 2 hFE IC = 200 mA, VCE = 5 V Semiconductor Group - ICBO VEB = 1 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 25 V, VBE = 0 Collector-base cutoff current V 50 2 120 250 Dec-13-1996 BFG 235 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 200 mA, VCE = 8 V, f = 200 MHz Collector-base capacitance 4 pF - 2.6 3.6 - 1.5 - - 15 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 5.5 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 60 mA, VCE = 8 V, f = 900 MHz ZS = ZSopt Power gain 2) - 2.7 - - 12 - - 6 - Gma IC = 200 mA, VCE = 8 V, f = 900 MHz ZS = ZSopt, ZL = ZLopt Transducer gain |S21e|2 IC = 200 mA, VCE = 8 V, f = 900 MHz ZS =ZL= 50 Ω Third order intercept point IP3 dBm IC = 200 mA, VCE = 8 V, f = 900 MHz ZS =ZL= 50 Ω - 40 - 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-13-1996 BFG 235 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 2200 mW Ptot 1800 TS 1600 1400 1200 TA 1000 800 600 400 200 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 10 2 K/W RthJS Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 4 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-13-1996 BFG 235 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 6.0 7 5V GHz pF Ccb fT 5 5.0 4.5 1V 4.0 4 3.5 3 3.0 0.7V 2.5 2 2.0 1 1.5 0 1.0 0 4 8 12 16 V VR 22 0 50 100 150 200 Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter mA IC 300 9 13 10V 5V dB dB G G 11 10V 5V 7 3V 3V 6 2V 10 2V 5 9 4 1V 1V 8 3 7 2 6 0.7V 1 0.7V 5 0 0 50 100 Semiconductor Group 150 200 mA IC 300 5 0 50 100 150 200 mA IC 300 Dec-13-1996 BFG 235 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 14 42 IC=200mA 10V 8V dBm 0.9GHz dB 38 G IP 3 36 34 10 5V 32 30 8 1.8GHz 3V 28 0.9GHz 26 6 2V 24 22 4 20 18 2 16 0 14 12 0 0 2 4 6 8 V 12 1V 50 100 150 200 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 30 mA IC 300 30 IC=200mA IC=200mA dB dB G S21 20 20 15 15 10 5 10 0 5 0 0.0 10V 2V 1V 0.7V 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 10V 2V 1V 0.7V -5 -10 0.0 3.5 6 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Dec-13-1996