INFINEON BFG135A

BFG 135A
NPN Silicon RF Transistor
For low-distortion broadband amplifier
4
stages in antenna and telecommunication
systems up to 2 GHz at collector currents from
70 mA to 130 mA
3
Power amplifiers for DECT and PCN systems
2
Integrated emitter ballast resistor
1
fT = 6 GHz
VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
BFG 135A
BFG135A
Pin Configuration
1=E
2=B
3=E
Package
4=C
SOT-223
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
15
Collector-emitter voltage
VCES
25
Collector-base voltage
VCBO
25
Emitter-base voltage
VEBO
2
Collector current
IC
150
Base current
IB
20
Total power dissipation, TS 100 °C F)
Ptot
Junction temperature
Value
Unit
V
mA
1
W
Tj
150
°C
Ambient temperature
TA
-65 ... 150
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Junction - soldering point
RthJS
50
K/W
1T is measured on the collector lead at the soldering point to the pcb
S
1
Oct-26-1999
BFG 135A
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
15
-
-
V
ICES
-
-
100
µA
ICBO
-
-
50
nA
IEBO
-
-
1
µA
hFE
80
120
250
DC characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
Collector-emitter cutoff current
VCE = 25 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
-
IC = 100 mA, VCE = 8 V
2
Oct-26-1999
BFG 135A
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol
Values
Parameter
Unit
min.
typ.
max.
4.5
6
-
Ccb
-
1.3
1.8
Cce
-
0.8
-
Ceb
-
7.5
-
AC characteristics (verified by random sampling)
Transition frequency
fT
GHz
IC = 100 mA, VCE = 8 V, f = 200 MHz
Collector-base capacitance
pF
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
dB
F
IC = 30 mA, VCE = 8 V, ZS = ZSopt ,
f = 900 MHz
-
2
-
f = 1.8 GHz
-
3.7
-
f = 900 MHz
-
14
-
f = 1.8 GHz
-
9
-
-
10
-
-
4
-
-
38
-
Power gain, maximum available F)
Gma
IC = 100 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,
|S21e|2
Transducer gain
IC = 100 mA, VCE = 8 V, ZS = ZL = 50 ,
f = 900 MHz
f = 1.8 GHz
Third order intercept point
IP3
IC = 100 mA, VCE = 8 V, ZS = ZL= 50 ,
f = 900 MHz
1G
ma
dBm
= |S21 / S12 | (k-(k2-1)1/2)
3
Oct-26-1999
BFG 135A
Total power dissipation Ptot = f (TA *, TS )
* Package mounted on epoxy
1200
mW
1000
TS
P tot
900
800
TA
700
600
500
400
300
200
100
0
0
20
40
60
80
100
120 °C
Kein
150
TA,TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load
Ptotmax/P totDC = f (tp)
10 2
Ptotmax / PtotDC
10 2
RthJS
K/W
10 1
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -7
10
0
tp
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
4
Oct-26-1999
BFG 135A
Collector-base capacitance Ccb = f (VCB )
Transition frequency f T = f (I C)
f = 1MHz
V CE = Parameter
4.0
7.0
GHz
pF
10V
6.0
5V
3V
5.5
3.0
2V
fT
Ccb
5.0
2.5
4.5
4.0
2.0
3.5
1V
3.0
1.5
2.5
2.0
1.0
0.7V
1.5
1.0
0.5
0.5
0.0
0
4
8
12
16
V
0.0
0
22
20
40
60
80
100
120
VCB
140 mA 170
IC
Power Gain Gma , Gms = f(IC )
Power Gain Gma, Gms = f(I C)
f = 0.9GHz
f = 1.8GHz
VCE = Parameter
VCE = Parameter
16
11
dB
10V
dB
5V
12
10V
9
3V
2V
5V
8
G
G
3V
10
7
2V
6
8
1V
5
6
4
1V
3
0.7V
4
2
2
0
0
1
20
40
60
80
100
120
0
0
140 mA 170
IC
0.7V
20
40
60
80
100
120
140 mA 170
IC
5
Oct-26-1999
BFG 135A
Power Gain Gma , Gms = f(VCE):_____
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50)
|S21|2 = f(VCE):---------
VCE = Parameter, f = 900MHz
f = Parameter
15
dB
45
0.9GHz
IC=100mA
10V
dBm
8V
12
11
0.9GHz
35
1.8GHz
9
5V
IP 3
G
10
30
3V
8
7
25
6
2V
5
20
4
1V
3
15
2
1
0
0
2
4
6
V
8
10
0
12
20
40
60
80
100
120
mA
VCE
160
IC
Power Gain |S21|2= f(f)
Power Gain Gma , Gms = f(f)
V CE = Parameter
VCE = Parameter
30
30
IC =100mA
IC=100mA
dB
dB
20
G
S21
20
15
15
10
10
5
10V
5
2V
0
0.7
1V
2V
1.0
1.5
2.0
1V
0.7V
0
0.0
0.5
1.0
1.5
2.0
2.5
GHz
-5
0.0
3.5
f
0.5
10V
GHz
3.0
f
6
Oct-26-1999