SPD04N60C2 SPU04N60C2 Final data Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V • Periodic avalanche rated RDS(on) 0.95 Ω • Extreme dv/dt rated ID 4.5 A • Ultra low effective capacitances P-TO251 P-TO252 • Improved noise immunity Type Package Ordering Code Marking SPD04N60C2 P-TO252 Q67040-S4307 04N60C2 SPU04N60C2 P-TO251 Q67040-S4306 04N60C2 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 4.5 TC = 100 °C 2.8 9 Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS 130 EAR 0.4 Avalanche current, repetitive tAR limited by Tjmax IAR 4.5 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation, TC = 25°C Ptot 50 W Operating and storage temperature Tj , Tstg -55... +150 °C mJ ID =3.6A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax 1) ID =4.5A, VDD =50V A V/ns IS =4.5A, VDS < VDD , di/dt=100A/µs, Tjmax=150°C Page 1 2002-10-07 SPD04N60C2 SPU04N60C2 Final data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 2.5 Thermal resistance, junction - ambient, leaded RthJA - - 75 SMD version, device on PCB: RthJA @ min. footprint - - 75 @ 6 cm2 cooling area 2) - - 50 Linear derating factor - - 0.4 W/K - - 260 °C V Soldering temperature, Tsold K/W 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage V(BR)DSS 600 - - V(BR)DS - 700 - VGS(th) 3.5 4.5 5.5 VGS =0V, ID =0.25mA Drain-source avalanche breakdown voltage VGS =0V, ID =4.5A Gate threshold voltage, VGS = VDS ID =200µA, Tj =25°C Zero gate voltage drain current µA IDSS VDS = 600 V, VGS = 0 V, Tj = 25 °C - 0.5 1 VDS = 600 V, VGS = 0 V, Tj = 150 °C - - 50 IGSS - - 100 nA RDS(on) - 0.85 0.95 Ω RG - 0.95 - Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =10V, ID=2.8A, Tj =25°C Gate input resistance f = 1 MHz, open drain 1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AV AR 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-10-07 SPD04N60C2 SPU04N60C2 Final data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values min. typ. - 2.5 Unit max. Characteristics Transconductance g fs V DS≥2*I D*R DS(on)max, S ID=2.8A Input capacitance Ciss V GS=0V, V DS=25V, - 580 - Output capacitance Coss f=1MHz - 220 - Reverse transfer capacitance Crss - 7 - - 20 - - 35 - Effective output capacitance, 1) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance, 2) Co(tr) time related Turn-on delay time t d(on) V DD=380V, V GS=0/13V, - 10 - Rise time tr ID=4.5A, RG=18Ω, - 31 - Turn-off delay time t d(off) Tj=125°C - 44 66 Fall time tf - 12.5 18.8 - 4.5 - - 11 - - 17.6 22.9 - 8 - pF pF ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =350V, ID =4.5A VDD =350V, ID =4.5A, nC VGS =0 to 10V Gate plateau voltage V(plateau) VDD =350V, ID =4.5A V 1C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS . 2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2002-10-07 SPD04N60C2 SPU04N60C2 Final data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - - 4.5 - - 9 Characteristics Inverse diode continuous IS TC=25°C A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD V GS=0V, I F=IS - 1 1.2 V Reverse recovery time trr V R=350V, I F=I S , - 900 1530 ns Reverse recovery charge Qrr diF/dt=100A/µs - 3.2 - µC Peak reverse recovery current Irrm - 12 - A Peak rate of fall of reverse dirr /dt - 440 - A/µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance Rth1 0.039 Rth2 Cth1 0.00008293 0.083 Cth2 0.000282 Rth3 0.101 Cth3 0.0004859 Rth4 0.262 Cth4 0.0006523 Rth5 0.294 Cth5 0.005017 Rth6 0.094 Cth6 0.052 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2002-10-07 SPD04N60C2 SPU04N60C2 Final data 1 Power dissipation 2 Safe operating area Ptot = f (TC ) ID = f ( VDS ) parameter : D = 0 , TC =25°C 55 10 1 SPD04N60C2 W A 45 10 0 ID Ptot 40 35 30 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 25 20 10 -1 15 10 5 0 0 20 40 60 80 100 120 °C 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (tp ) ID = f (VDS ); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 10 1 14 K/W A 20V 12V 10V 10 9.5V 8 9V ID ZthJC 10 0 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 8.5V 6 8V 4 7.5V 7V 2 6.5V 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 0 0 5 10 15 25 V VDS Page 5 2002-10-07 3 SPD04N60C2 SPU04N60C2 Final data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=150°C RDS(on) =f(ID ) parameter: tp = 10 µs, VGS parameter: Tj =150°C, VGS 8 5 20V 12V 10V 9.5V RDS(on) 9V 8.5V ID A Ω 8V 4 3.5 4 3 20V 12V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V 7.5V 2.5 7V 2 2 6.5V 6V 0 0 5 10 15 1.5 1 0 25 V 1 2 3 4 5 6 7 VDS A ID 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj ) ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs parameter : ID = 2.8 A, VGS = 10 V 5.5 SPD04N60C2 8.5 16 Ω A 12 4 ID RDS(on) 4.5 3.5 10 25 °C 150 °C 3 8 2.5 6 2 1.5 4 98% 1 typ 2 0.5 0 -60 -20 20 60 100 °C 180 Tj Page 6 0 0 2 4 6 8 10 12 14 16 V 20 VGS 2002-10-07 SPD04N60C2 SPU04N60C2 Final data 9 Forward characteristics of body diode 10 Typ. switching time IF = f (VSD ) t = f (RG ), inductive load, Tj =125°C parameter: Tj , tp = 10 µs par.: VDS =380V, VGS=0/+13V, ID=4.5 A 10 1 10 3 SPD04N60C2 ns A td(off) td(on) 10 2 t IF 10 0 tr 10 -1 tf 10 1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -2 0 0.4 0.8 1.2 1.6 2.4 V 2 10 0 0 3 20 40 60 80 100 120 140 160 VSD Ω 200 RG 11 Typ. switching losses1) 12 Typ. switching losses1) E = f (ID ), inductive load, Tj=125°C E = f(RG ), inductive load, Tj =125°C par.: VDS =380V, VGS=0/+13V, RG =18Ω par.: VDS =380V, VGS=0/+13V,ID =4.5A 0.12 mWs 0.22 *) E on includes SDP06S60 diode commutation losses. 1This chart helps to estimate the switching power losses. The values can be different under other operating conditions. *) Eon includes SDP06S60 diode commutation losses. 1This chart helps to estimate the switching power losses. 0.18 The values can be different under other operating conditions. 0.16 mWs E E 0.08 0.14 0.12 0.06 0.1 Eon* Eon* Eoff 0.08 Eoff 0.04 0.06 0.04 0.02 0.02 0 0 1 2 3 4 5 6 A ID 0 0 8 Page 7 20 40 60 80 100 120 140 160 Ω 200 RG 2002-10-07 SPD04N60C2 SPU04N60C2 Final data 13 Avalanche SOA 14 Avalanche energy IAR = f (tAR ) EAS = f (Tj ) par.: Tj ≤ 150 °C par.: ID = 3.6 A, VDD = 50 V 4.5 160 A mJ T j(START) =25°C 120 3 EAS IAR 3.5 100 2.5 80 2 T j(START) =125°C 60 1.5 40 1 20 0.5 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 0 20 4 µs 10 tAR 40 60 80 100 120 °C 160 Tj 15 Drain-source breakdown voltage 16 Avalanche power losses V(BR)DSS = f (Tj ) PAR = f (f ) parameter: EAR =0.4mJ SPD04N60C2 200 720 W 680 150 P AR V (BR)DSS V 660 125 640 100 620 75 600 50 580 25 560 540 -60 -20 20 60 100 °C 180 Tj 0 4 10 10 5 10 Hz f Page 8 2002-10-07 6 SPD04N60C2 SPU04N60C2 Final data 17 Typ. capacitances 18 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS ) parameter: VGS =0V, f=1 MHz 10 4 3.5 pF µJ 10 3 C E oss Ciss 2.5 2 10 2 1.5 Coss 1 10 1 Crss 10 0 0 100 0.5 200 300 400 V 600 VDS 0 0 100 200 300 400 V 600 VDS Definition of diodes switching characteristics Page 9 2002-10-07 SPD04N60C2 SPU04N60C2 Final data P-TO-252-3-1 (D-PAK) 6.5 +0.15 -0.10 2.3 +0.05 -0.10 0.9 +0.08 -0.04 B 0.8 ±0.15 0.51 min 9.9 ±0.5 6.22 -0.2 1 ±0.1 A 5.4 ±0.1 0.15 max per side 3x 0.75 ±0.1 0...0.15 0.5 +0.08 -0.04 2.28 1 ±0.1 4.57 0.25 M A B 0.1 GPT09051 All metal surfaces tin plated, except area of cut. P-TO-251-3-1 (I-PAK) 6.5 +0.15 -0.10 2.3 +0.05 -0.10 0.9 +0.08 -0.04 0.15 max per side 9.3 ±0.4 C B 6.22 -0.2 1 ±0.1 A 5.4 ±0.1 0.5 +0.08 -0.04 3 x 0.75 ±0.1 2.28 4.56 1.0 0.25 M A B C GPT09050 All metal surfaces tin plated, except area of cut. Page 10 2002-10-07 Final data SPD04N60C2 SPU04N60C2 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 11 2002-10-07