PD 91677B IRG4BC10UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous Generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package VCE(on) typ. = 2.15V G @VGE = 15V, IC = 5.0A E tf (typ.) = 140ns n-cha nn el Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 8.5 5.0 34 34 4.0 16 ± 20 38 15 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt www.irf.com Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. Typ. Max. — — — — — — — 0.50 — 2 (0.07) 3.3 7.0 — 80 — Units °C/W g (oz) 1 12/30/00 IRG4BC10UD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 600 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.54 VCE(on) Collector-to-Emitter Saturation Voltage — 2.15 — 2.61 — 2.30 Gate Threshold Voltage 3.0 — VGE(th) ∆VGE(th) /∆TJ Temperature Coeff. of Threshold Voltage — -8.7 gfe Forward Transconductance T 2.8 4.2 ICES Zero Gate Voltage Collector Current — — — — V FM Diode Forward Voltage Drop — 1.5 — 1.4 IGES Gate-to-Emitter Leakage Current — — V(BR)CES Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, IC = 1.0mA 2.6 IC = 5.0A VGE = 15V See Fig. 2, 5 — V IC = 8.5A — IC = 5.0A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 5.0A 250 µA VGE = 0V, VCE = 600V 1000 VGE = 0V, VCE = 600V, TJ = 150°C 1.8 V IC = 4.0A See Fig. 13 1.7 IC = 4.0A, TJ = 125°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Q rr Diode Reverse Recovery Charge di (rec)M/dt Diode Peak Rate of Fall of Recovery During tb Min. — — — — — — — — — — — — — — — — — — — — — — — — — — — Typ. 15 2.6 5.8 40 16 87 140 0.14 0.12 0.26 38 18 95 250 0.45 7.5 270 21 3.5 28 38 2.9 3.7 40 70 280 235 Max. Units Conditions 22 IC = 5.0A 4.0 nC VCC = 400V See Fig. 8 8.7 VGE = 15V — TJ = 25°C — ns IC = 5.0A, VCC = 480V 130 VGE = 15V, RG = 100Ω 210 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 18 0.33 — TJ = 150°C, See Fig. 11, 18 — ns IC = 5.0A, VCC = 480V — VGE = 15V, RG = 100Ω — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 42 ns TJ = 25°C See Fig. 57 TJ = 125°C 14 IF = 4.0A 5.2 A TJ = 25°C See Fig. 6.7 TJ = 125°C 15 VR = 200V 60 nC TJ = 25°C See Fig. 105 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 Details of note Q through T are on the last page 2 www.irf.com IRG4BC10UD 7 F o r b o th : D u ty c y c le : 5 0 % TJ = 1 2 5 ° C T sink = 9 0 ° C G a te d riv e a s s p e c ifie d LOAD CURRENT (A) 6 5 P o w e r D is s ip a tio n = 9.2 W 4 S q u a re w a v e : 6 0% of rate d volta ge 3 I 2 Id e a l d io d e s 1 0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 25 oC TJ = 150 oC 10 1 V = 15V 20µs PULSE WIDTH GE 0.1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 100 10 TJ = 150 o C TJ = 25 o C V = 50V 5µs PULSE WIDTH CC 1 5 6 7 8 9 10 11 12 13 14 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4BC10UD 10 5.0 V = 15V 80 us PULSE WIDTH VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) GE 8 6 4 2 0 25 50 75 100 125 150 I C = 10 A 4.0 3.0 I C = 5.05 A I C = 2.5 A 2.0 1.0 -60 -40 -20 TC , Case Temperature ( ° C) 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC10UD VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 400 Cies 300 200 C oes 100 Cres 20 VGE , Gate-to-Emitter Voltage (V) 500 10 12 8 4 0 100 0 VCE , Collector-to-Emitter Voltage (V) 10 Total Switching Losses (mJ) Total Switching Losses (mJ) 0.25 0.20 60 70 80 90 , Gate Resistance(Ohm) (Ω) RG R, GGate Resistance Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 8 12 16 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 480V V GE = 15V TJ = 25 ° C I C = 5.0A 50 4 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0.30 VCC = 400V I C = 5.0A 16 0 1 100 100 Ω RG = Ohm VGE = 15V VCC = 480V IC = 10 A 1 I 5A C = 5.0A IC = 2.5 A 0.1 0.01 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC10UD RG TJ 1.2 VCC VGE 100 = 100Ω Ohm = 150 ° C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 1.4 1.0 0.8 0.6 0.4 0.2 VGE = 20V T J = 125 oC 10 SAFE OPERATING AREA 1 0.0 0 2 4 6 8 1 10 10 100 1000 VCE , Collector-to-Emitter Voltage (V) I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Instantaneous Forward Current ( A ) 100 TJ = 150°C 10 TJ = 125°C T = 25°C J 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 FForward orward VVoltage oltage DDrop rop -- VVFM V) ) F M((V 6 Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current www.irf.com IRG4BC10UD 50 14 I F = 8.0A 45 12 I F = 4.0A VR = 20 0V T J = 1 25 °C T J = 2 5°C I F = 8.0A 10 I F = 4.0A Irr- ( A) trr- (nC) 40 35 8 6 30 4 25 2 VR = 2 00 V T J = 1 2 5°C T J = 2 5 °C 20 100 di f /dt - (A/µ s) 0 100 1000 1000 di f /dt - (A/µ s) Fig. 15 - Typical Recovery Current vs. dif/dt Fig. 14 - Typical Reverse Recovery vs. dif/dt 200 1000 VR = 2 00 V T J = 1 25°C T J = 2 5°C VR = 20 0V T J = 1 25 °C T J = 2 5°C 160 120 I F = 8.0A di (rec) M/dt- (A /µs) Qrr- (nC) I F = 8.0A I F = 4.0A 80 I F = 4.0A 40 0 100 di f /dt - (A/µ s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com A 100 100 1000 di f /dt - (A/µ s ) Fig. 17 - Typical di(rec)M/dt vs. dif/dt, 7 IRG4BC10UD 90% Vge Same ty pe device as D .U.T. +Vge Vce 430µF 80% of Vce D .U .T. Ic 9 0 % Ic 10% Vce Ic 5 % Ic td (o ff) tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1 + 5 µ S V c e icIcd tdt Vce t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g trr Q rr = Ic ∫ trr id t Ic ddt tx +Vg tx 10% Vcc 1 0 % Irr V cc D UT VO LTAG E AN D CU RRE NT Vce V pk Irr Vcc 1 0 % Ic Ip k 9 0 % Ic Ic D IO D E R E C O V E R Y W A V E FO R M S tr td (o n ) 5% Vce t1 ∫ t2 ce ieIc d t dt E o n = VVce t1 t2 E re c = D IO D E R E V E R S E REC OVERY ENER GY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ t4 VVd d idIc d t dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4BC10UD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R EN T D .U .T . V O L T A G E IN D .U .T . C U R R EN T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V D.U.T. Vc* RL= 480V 4 X I C @25°C 0 - 480V 50V 6000µ F 100 V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 20. Pulsed Collector Current Test Circuit 9 IRG4BC10UD Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG = 100Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. Case Outline and Dimensions — TO-220AB 2.8 7 (.1 1 3 ) 2.6 2 (.1 0 3 ) 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) 4 3.78 (.149) 3.54 (.139) -A - 1.32 (.05 2) 1.22 (.04 8) 6 .4 7 (.255) 6 .1 0 (.240) 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1.15 (.0 45) M IN 1 2 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2. 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 20 A B . LEAD 1234- 3 3X 1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) -B - 4.69 (.185) 4.20 (.165) 3.96 (.1 60) 3.55 (.1 40) A S S IG N M E N T S G A TE C O L LE C T O R E M IT T E R C O L LE C T O R 4.06 (.160) 3.55 (.140) 3X 0.93 (.037) 0.69 (.027) 0 .3 6 (.0 1 4 ) M B A M 2 .5 4 (.1 0 0 ) 3X 0.55 (.0 22) 0.46 (.0 18) 2.92 (.115 ) 2.64 (.104 ) 2X CONFORMS TO JEDEC OUTLINE TO-220AB D im e n s io n s in M illim e te rs a n d (In c h e s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00 10 www.irf.com