PD - 97316
IRG4PC50SDPbF
Standard Speed CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
Standard: Optimized for minimum saturation voltage
and low operating frequencies (<1kHz)
IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
Industry standard TO-247AC package
VCES = 600V
VCE(on) typ. = 1.28V
G
@VGE = 15V, IC = 41A
E
n-channel
Benefits
Generation -4 IGBT's offer highest efficiencies
available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
C
E
C
G
TO-247AC
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
Max.
Units
V
VCES
Collector-to-Emitter Breakdown Voltage
600
IC @ TC = 25°C
Continuous Collector Current
70
IC @ TC = 100°C
Continuous Collector Current
Pulsed Collector Current
d
140
25
ICM
c
ILM
Clamped Inductive Load Current
IF @ TC = 100°C
41
140
A
IFM
Diode Continous Forward Current
Diode Maximum Forward Current
e
280
VGE
Continuous Gate-to-Emitter Voltage
±20
V
PD @ TC = 25°C
Maximum Power Dissipation
200
W
PD @ TC = 100°C
Maximum Power Dissipation
TJ
Operating Junction and
TSTG
Storage Temperature Range
78
-55 to +150
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Min.
Typ.
Max.
RθJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
Parameter
–––
–––
0.64
RθJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode)
–––
–––
0.83
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
0.24
–––
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
–––
40
1
Units
°C/W
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04/16/08
IRG4PC50SDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES
Collector-to-Emitter Breakdown Voltage
∆V(BR)CES/∆TJ
Temperature Coeff. of Breakdown Voltage
Min.
Typ.
600
—
Max. Units
—
—
0.75
—
—
1.28
1.36
—
VCE(on)
Collector-to-Emitter Saturation Voltage
—
1.62
—
1.25
—
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
∆VGE(th)/∆TJ
Threshold Voltage temp. coefficient
—
-9.3
—
gfe
Forward Transconductance
17
34
—
—
—
250
—
—
2.0
—
—
1000
—
1.3
1.7
—
1.2
1.5
—
—
±100
ICES
Collector-to-Emitter Leakage Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
V
Conditions
Ref.Fig
VGE = 0V, IC = 250µA
V/°C VGE = 0V, IC = 1mA (25°C-150°C)
IC = 41A, VGE = 15V, TJ = 25°C
V
2
IC = 80A, VGE = 15V, TJ = 25°C
IC = 41A, VGE = 15V, TJ = 150°C
V
VCE = VGE, IC = 250µA
3
mV/°C VCE = VGE, IC = 250µA (25°C - 150°C)
S VCE = 100V, IC = 41A
VGE = 0V, VCE = 600V
µA
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
V
IF = 25A
13
IF = 25A, TJ = 150°C
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
Qg
Total Gate Charge (turn-on)
Parameter
—
180
Max. Units
280
Qge
Gate-to-Emitter Charge (turn-on)
—
24
37
Conditions
Ref.Fig
IC = 41A
nC
8
VGE = 15V
VCC = 400V
Qgc
Gate-to-Collector Charge (turn-on)
—
61
92
Eon
Turn-On Switching Loss
—
0.72
—
Eoff
Turn-Off Switching Loss
—
8.27
—
Etotal
Total Switching Loss
—
8.99
13
Energy losses include tail & diode reverse recovery
td(on)
Turn-On delay time
—
33
—
IC = 41A, VCC = 480V, VGE = 15V
18a, 18b
RG = 5.0Ω, L = 200µH, TJ = 25°C
18c
IC = 41A, VCC = 480V, VGE = 15V
18a, 18b
IC = 41A, VCC = 480V, VGE = 15V
mJ
18a, 18b
RG = 5.0Ω, TJ = 25°C
18c
tr
Rise time
—
30
—
td(off)
Turn-Off delay time
—
650
980
tf
Fall time
—
400
600
Etotal
Total Switching Loss
—
15
—
td(on)
Turn-On delay time
—
31
—
tr
Rise time
—
31
—
td(off)
Turn-Off delay time
—
1080
—
tf
Fall time
—
620
—
Cies
Input Capacitance
—
4100
—
Coes
Output Capacitance
—
250
—
VCC = 30V
Cres
Reverse Transfer Capacitance
—
48
—
trr
Diode Reverse Recovery Time
—
f = 1.0Mhz
TJ = 25°C, VR = 200V, IF = 25A, di/dt=200A/µs
Irr
Peak Reverse Recovery Current
Qrr
Peak Reverse Recovery Current
di(rec)M/dt
Peak Rate of Fall of Recovery During tb
50
75
105
160
—
4.5
10
—
8.0
15
—
112
375
—
420
1200
—
250
—
—
160
—
ns
mJ
ns
RG = 5.0Ω, L = 200µH
18c
TJ = 150°C
pF
ns
VGE = 0V
7
TJ = 125°C, VR = 200V, IF = 25A, di/dt=200A/µs
A
TJ = 25°C, VR = 200V, IF = 25A, di/dt=200A/µs
TJ = 125°C, VR = 200V, IF = 25A, di/dt=200A/µs
nC
14
18a, 18d
15
18a, 18d
TJ = 25°C, VR = 200V, IF = 25A, di/dt=200A/µs
TJ = 125°C, VR = 200V, IF = 25A, di/dt=200A/µs
16
18a, 18d
A/µs TJ = 25°C, VR = 200V, IF = 25A, di/dt=200A/µs
TJ = 125°C, VR = 200V, IF = 25A, di/dt=200A/µs
Notes:
Repetitive rating: VGE=15V; pulse width limited by maximum junction temperature. (See figure 20)
VCC=80%(VCES), VGE=15V, RG = 5.0Ω. (See figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
2
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IRG4PC50SDPbF
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
Fig. 2 - Typical Output Characteristics
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Fig. 3 - Typical Transfer Characteristics
3
IRG4PC50SDPbF
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC50SDPbF
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
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5
IRG4PC50SDPbF
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current - I F (A)
100
TJ = 150°C
TJ = 125°C
10
1
0.6
TJ = 25°C
1.0
1.4
1.8
2.2
2.6
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4PC50SDPbF
100
140
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
120
I IRRM - (A)
t rr - (ns)
100
IF = 50A
80
I F = 25A
I F = 50A
I F = 25A
10
I F = 10A
IF = 10A
60
40
20
100
1
100
1000
di f /dt - (A/µs)
1000
di f /dt - (A/µs)
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
10000
1500
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
Q RR - (nC)
1200
900
IF = 50A
600
IF = 25A
1000
IF = 10A
I F = 25A
300
I F = 10A
0
100
di f /dt - (A/µs)
IF = 50A
1000
Fig. 16 - Typical Stored Charge vs. dif/dt
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100
100
di f /dt - (A/µs)
1000
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
7
IRG4PC50SDPbF
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
Ic
90% Ic
10% Vce
Ic
430µF
80%
of Vce
5% Ic
D.U.T.
td(off)
tf
Eoff =
∫
t1+5µS
Vce ic dt
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T.
10% +Vg
trr
Qrr =
Ic
trr
id dt
tx
∫
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
Vcc
10% Ic
90% Ic
Ipk
Ic
DIODE RECOVERY
WAVEFORMS
tr
td(on)
5% Vce
t1
∫
t2
Eon = Vce ie dt
t1
t2
DIODE REVERSE
RECOVERY ENERGY
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
∫
t4
Erec = Vd id dt
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4PC50SDPbF
Vg GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's
Test Circuit
D.U.T.
L
1000V
Vc*
RL=
0 - 480V
480V
4 X IC @25°C
50V
6000µF
100V
Figure 19. Clamped Inductive Load Test
Circuit
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Figure 20. Pulsed Collector Current
Test Circuit
9
IRG4PC50SDPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
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TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/08
10
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