PD - 9.1369B
IRLI3705N
HEXFET® Power MOSFET
Logic-Level Gate Drive
Advanced Process Technology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
Description
l
D
l
VDSS = 55V
RDS(on) = 0.01Ω
G
S
ID = 52A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
52
37
310
58
0.39
± 16
340
46
5.8
5.0
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
2.6
65
°C/W
8/25/97
IRLI3705N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
–––
–––
1.0
50
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
–––
–––
–––
–––
V(BR)DSS
IGSS
Typ.
–––
0.056
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
140
37
78
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.010
VGS = 10V, ID = 28A
0.012
Ω
VGS = 5.0V, ID = 28A
0.018
VGS = 4.0V, ID = 24A
2.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 46A
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, T J = 150°C
100
VGS = 16V
nA
-100
VGS = -16V
98
ID = 46A
19
nC VDS = 44V
49
VGS = 5.0V, See Fig. 6 and 13
–––
VDD = 28V
–––
ID = 46A
ns
–––
RG = 1.8Ω, VGS = 5.0V
–––
RD = 0.59Ω, See Fig. 10
D
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
S
3600 –––
VGS = 0V
870 –––
VDS = 25V
pF
320 –––
ƒ = 1.0MHz, See Fig. 5
12 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 320µH
RG = 25Ω, IAS = 46A. (See Figure 12)
Min. Typ. Max. Units
–––
–––
52
–––
–––
310
–––
–––
–––
–––
94
290
1.3
140
440
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 28A, VGS = 0V
TJ = 25°C, IF = 46A
di/dt = 100A/µs
D
S
ISD ≤ 46A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
t=60s, ƒ=60Hz
Uses IRL3705N data and test conditions
IRLI3705N
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V
TOP
ID , D ra in -to -S o u rce C u rre n t (A )
ID , D ra in -to -S o u rc e C u rre n t (A )
TOP
100
10
2 .5V
20 µ s PU LSE W ID TH
T J = 2 5°C
1
0.1
1
10
100
2.5 V
10
20 µ s PU LSE W ID TH
T J = 1 75°C
1
A
100
0.1
V D S , Drain-to-Source V oltage (V )
3.0
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I D , D rain -to- S ou rce C ur ren t (A )
TJ = 2 5 ° C
TJ = 1 7 5 °C
10
V DS = 2 5V
2 0µ s PU LS E W ID T H
2.0
3.0
4.0
5.0
6.0
7.0
V G S , G ate -to-S ource V oltage (V )
Fig 3. Typical Transfer Characteristics
A
100
Fig 2. Typical Output Characteristics
1000
1
10
V D S , Drain-to-Source V oltage (V )
Fig 1. Typical Output Characteristics
100
1
8.0
A
I D = 77 A
2.5
2.0
1.5
1.0
0.5
V G S = 10 V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRLI3705N
V GS
C iss
C rs s
C is s C os s
C , C a p a c ita n c e (p F )
5000
=
=
=
=
15
0V ,
f = 1 MH z
C gs + C gd , C ds SH O R TED
C gd
C ds + C gd
V G S , G a te -to -S o u rc e V o lta g e (V )
6000
C os s
2000
C rs s
1000
0
A
1
10
V D S = 44 V
V D S = 28 V
12
4000
3000
I D = 46 A
9
6
3
FO R TEST C IRC U IT
SEE FIG UR E 13
0
100
0
V D S , D rain-to-S ource Voltage (V )
40
60
80
100
120
A
140
Q G , T otal G ate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
I D , D ra in C u rre n t (A )
I S D , R e v e rse D ra in C u rre n t (A )
20
100
TJ = 1 75°C
T J = 2 5°C
10µ s
100
100µ s
1 ms
10
10m s
VG S = 0 V
10
0.4
0.8
1.2
1.6
2.0
2.4
V S D , S ource-to-Drain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.8
T C = 25 °C
T J = 17 5°C
S ing le Pulse
1
1
A
10
100
V D S , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
IRLI3705N
60
RD
VDS
I D , Drain Current (A)
50
VGS
D.U.T.
RG
+
- VDD
40
5.0V
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
T C , Case Temperature
150
175
( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response
(Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
PDM
t1
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
IRLI3705N
15 V
L
VDS
D .U .T
RG
IA S
20V
D R IV E R
+
- VDD
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (BR )D SS
A
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
800
TO P
BO TTOM
ID
1 9A
33A
46 A
600
400
200
0
V D D = 2 5V
25
50
A
75
100
125
150
Starting TJ , Junction T emperature (°C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
5.0 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
175
IRLI3705N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
Period
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRLI3705N
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
10.60 (.417 )
10.40 (.409 )
ø
3 .40 (.1 33)
3 .10 (.1 23)
4.80 (.189 )
4.60 (.181 )
-A3.7 0 (.145)
3.2 0 (.126)
16 .0 0 (.630)
15 .8 0 (.622)
2.80 (.110)
2.60 (.102)
L EA D AS SIGN M EN T S
1 - GA T E
2 - D R AIN
3 - SO U R C E
7.10 (.280 )
6.70 (.263 )
1.15 (.045)
M IN .
NO T ES :
1 D IM E N SION IN G & T O LER AN C IN G
PE R A N SI Y1 4.5M , 1982
1
2
3
2 C O N T R OLL IN G D IM EN SION : IN C H .
3.30 (.130)
3.10 (.122)
-B -
13 .7 0 (.540)
13 .5 0 (.530)
C
A
1.40 (.05 5)
3X
1.05 (.04 2)
0.90 (.035 )
3X 0.70 (.028 )
0.25 (.010)
3X
M
A M
0.48 (.019 )
0.44 (.017 )
2.85 (.1 12)
2.65 (.1 04)
B
2 .5 4 (.100)
2X
D
B
M IN IM U M C R E EP AG E
D IST A N C E B ET W E EN
A -B -C -D = 4.80 (.189 )
Part Marking Information
TO-220 Fullpak
E XAM
: S
T HIS
N IRF
I840G
E X AM
PLE PLE
: T HI
IS AISN AIRF
1010
SE LY
MBLY
W ITW
H ITH
A S SAS
E MB
CODE
E401
LO TLOT
CO DE
9B 1M
A
IN TE R NA T ION A L
INT ER NAT IONA L
R EC T IF IER
IRIRF
F 1010
RE CTIF IER
I840G
LO GO
9246
P A RT NU M BE R
A
PA RT NU MBE R
LOGO
9 24 5
9BE 401 1M
A SAS
S EM
B LY
SE MBLY
LOLOT
T CO
DE E
COD
D A TE C OD E
ATEW )CODE
(YDYW
W )A R
Y(YYW
Y = YE
AR
WYY
W == YE
WE
EK
W W = W E EK
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http://www.irf.com/
Data and specifications subject to change without notice.
8/97