INFINEON BC846UPN

BC846UPN
NPN/PNP Silicon AF Transistor Array
For AF input stages and driver applications
5
4
6
High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolated NPN/PNP
3
2
Transistors in one package
1
VPW09197
Tape loading orientation
Top View
6 5 4
Marking on SC74 package
(for example W1s)
corresponds to pin 1 of device
C1
B2
E2
6
5
4
W1s
1 2 3
TR2
Position in tape: pin 1
opposite of feed hole side
Direction of Unreeling
SC74_Tape
TR1
1
2
3
E1
B1
C2
EHA07177
Type
Marking
BC846UPN
1Os
Pin Configuration
Package
1=E 2=B 3=C 4=E 5=B 6=C SC74
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
65
Collector-base voltage
VCBO
80
Collector-emitter voltage
VCES
80
V
Emitter-base voltage
VEBO
5
V
DC collector current
IC
100
Peak collector current
ICM
200
Total power dissipation, TS = 118 °C
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
V
mA
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
130
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Aug-21-2002
BC846UPN
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)CEO
65
-
-
V(BR)CBO
80
-
-
V(BR)CES
80
-
-
V(BR)EBO
5
-
-
ICBO
-
-
15
nA
ICBO
-
-
5
µA
DC Characteristics per Transistor
Collector-emitter breakdown voltage
V
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
-
hFE
IC = 10 µA, VCE = 5 V
-
250
-
IC = 2 mA, VCE = 5 V
200
290
450
Collector-emitter saturation voltage1)
mV
VCEsat
IC = 10 mA, IB = 0.5 mA
-
90
300
IC = 100 mA, IB = 5 mA
Base-emitter saturation voltage 1)
-
200
650
mV
VBEsat
IC = 10 mA, IB = 0.5 mA
-
700
-
IC = 100 mA, IB = 5 mA
-
900
-
IC = 2 mA, VCE = 5 V
580
660
750
IC = 10 mA, VCE = 5 V
-
-
820
Base-emitter voltage 1)
VBE(ON)
1) Pulse test: t < 300s; D < 2%
2
Aug-21-2002
BC846UPN
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
-
250
-
MHz
Ccb
-
2
-
pF
Ceb
-
10
-
h11e
-
4.5
-
k
h12e
-
2
-
10-4
h21e
-
330
-
-
h22e
-
30
-
S
AC Characteristics per Transistor
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit reverse voltage transf.ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
Short-circuit forward current transf.ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz
3
Aug-21-2002
BC846UPN
Total power dissipation Ptot = f (TS )
300
P tot
mW
200
150
100
50
0
0
20
40
60
80
120 °C
100
150
TS
Permissible Pulse Load
Permissible Pulse Load RthJS = f (tp )
Ptotmax / PtotDC = f (tp)
10 3
10 3
Ptotmax / PtotDC
K/W
RthJS
10 2
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10 1
10 0
10 -1 -6
10
10
-5
10
-4
10
-3
10
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
-2
s
10
10 0 -6
10
0
tp
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
4
Aug-21-2002
BC846UPN
Collector-base capacitance CCB = f (VCBO)
Transition frequency fT = f (IC)
Emitter-base capacitance CEB = f (VEBO )
VCE = 5V
12
pF
C CB0
( C EB0 )
BC 846...850
EHP00361
EHP00363
10 3
MHz
fT
10
8
5
C EB
10 2
6
5
4
C CB
2
0
10 -1
5
10 0
V
VCB0
10 1
10 -1
10 1
(VEB0 )
5 10 0
5
10 1
mA
ΙC
Collector cutoff current ICBO = f (TA)
Collector-emitter saturation voltage
VCB = 30V
IC = f (VCEsat), h FE = 20
EHP00381
10 4
nA
Ι CB0
EHP00367
10 2
ΙC
mA
10 3
100 C
25 C
-50 C
5
10 1
max
10 2
5
5
typ
10 1
5
10
10 2
10
0
5
0
5
10 -1
0
50
100
C
10 -1
150
TA
5
0
0.1
0.2
0.3
0.4
V 0.5
VCEsat
Aug-21-2002
BC846UPN
DC current gain hFE = f (IC )
Base-emitter saturation voltage
VCE = 5V
IC = f (VBEsat), hFE = 20
EHP00365
10 3
h FE 5
100 C
EHP00364
10 2
Ι C mA
100 C
25 C
-50 C
25 C
10 2
-50 C
10 1
5
5
10 1
10 0
5
5
10 0
10 -2
5 10 0
5 10 -1
5 10 1
10 -1
mA 10 2
0
0.2
0.4
0.6
0.8
ΙC
V
1.2
V BEsat
h parameter he = f (IC) normalized
h parameter he = f (VCE) normalized
VCE = 5V
IC = 2mA
EHP00368
10 2
he
5
he
h 11e
Ι C = 2 mA
h 21 e
1.5
VCE = 5 V
10 1
5
EHP00369
2.0
h 12e
h 11 e
h 12 e
1.0
h 22 e
10 0 h
21e
0.5
5
h 22e
10 -1
0
10 -1
5
10 0
mA
10 1
ΙC
0
10
20
V
30
VCE
6
Aug-21-2002