BC817U NPN Silicon Transistor Array For AF input stages and driver applications 5 4 6 High current gain Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors 3 2 with good matching in one package 1 VPW09197 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07178 Type BC817U Marking 6Bs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 45 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5 DC collector current IC Peak collector current ICM Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 115 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg Value 500 1 Unit V mA A mA -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 105 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BC817U Electrical Characteristics at TA=25°C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. V(BR)CEO 45 - - V(BR)CBO 50 - - V(BR)EBO 5 - - ICBO - - 100 nA ICBO - - 50 µA IEBO - - 100 nA DC Characteristics Collector-emitter breakdown voltage V IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 hFE DC current gain 1) - IC = 100 mA, VCE = 1 V 160 250 400 IC = 300 mA, VCE = 1 V 100 - - Collector-emitter saturation voltage1) VCEsat - - 0.7 V IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) VBEsat - - 1.2 fT - 170 - MHz Ccb - 6 - pF Ceb - 60 - IC = 500 mA, IB = 50 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 1) Pulse test: t < 300s; D < 2% 2 Nov-29-2001 BC817U Total power dissipation Ptot = f (TS ) Collector cutoff current ICBO = f (TA ) VCB = 25V 10 5 400 mW Ι CBO BC 817/818 EHP00221 nA 10 4 Ptot 300 250 max 10 3 200 typ 10 2 150 100 10 1 50 0 0 20 40 60 80 120 °C 100 10 0 150 0 50 100 TS 150 ˚C TA Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 10 3 2 RthJS 10 Ptotmax / PtotDC K/W D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 3 Nov-29-2001 BC817U Collector-emitter saturation voltage Base-emitter saturation voltage IC = f (VCEsat ), hFE = 10 IC = f (VBEsat ), hFE = 10 10 3 ΙC BC 817/818 EHP00223 mA ΙC 150 ˚C 25 ˚C -50 ˚C 10 2 10 1 10 1 5 5 10 0 10 0 5 5 0.2 150 ˚C 25 ˚C -50 ˚C 10 2 5 0 EHP00222 mA 5 10 -1 BC 817/818 10 3 0.4 0.6 V 10 -1 0.8 0 1.0 2.0 3.0 DC current gain hFE = f (IC ) Transition frequency fT = f (IC) VCE = 1V VCE = 5V h FE 5 BC 817/818 4.0 V BEsat VCEsat 10 3 V EHP00224 10 3 fT 100 ˚C 25 ˚C BC 817/818 EHP00218 MHz 5 -50 ˚C 10 2 5 10 2 5 10 1 5 10 0 10 -1 10 0 10 1 10 2 mA 10 10 1 10 0 3 10 1 10 2 mA 10 3 ΙC ΙC 4 Nov-29-2001